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Stretching magnetism with an electric field in a nitride semiconductor

Nature communications, 2016-10, Vol.7 (1), p.13232-13232, Article 13232

2016

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Monolithic high-index contrast grating: a material independent high-reflectance VCSEL mirror

Optics express, 2015-05, Vol.23 (9), p.11674-11686

2015

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Photoconductive and electro-optic effects in (Cd,Mg)Te single crystals measured in an experiment-on-chip configuration

Applied physics letters, 2017-07, Vol.111 (1)

2017

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High-temperature ultraviolet detection based on surface photovoltage effect in SiN passivated n-GaN films

Applied physics letters, 2016-08, Vol.109 (5)

2016

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Application of scanning thermal microscopy for investigation of thermal boundaries in multilayered photonic structures

Ultramicroscopy, 2013-12, Vol.135, p.95-98

2013

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Magnetically active vacancy related defects in irradiated GaN layers

Applied physics letters, 2012-08, Vol.101 (7), p.72102

2012

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Characterization of Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC MOS structures

Bulletin of the Polish Academy of Sciences. Technical sciences, 2016-09, Vol.64 (3), p.547-551

2016

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Nanocrystalline sputter-deposited ZnMgO:Al transparent p-type electrode in GaN-based 385nm UV LED for significant emission enhancement

Materials science & engineering. B, Solid-state materials for advanced technology, 2015-10, Vol.200, p.93-98

2015

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Characterization of (Cd,Mn)Te and (Cd,Mg)Te single crystals in the THz frequency range using integrated photoconductive and electro-optic effects

Journal of physics. Conference series, 2017-10, Vol.906 (1), p.12016

2017

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Proton implantation for the isolation of AlGaAs/GaAs quantum cascade lasers

Semiconductor science and technology, 2016-07, Vol.31 (7), p.75010

2016

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High Quality Gate Insulator/GaN Interface for Enhancement-Mode Field Effect Transistor

Acta physica Polonica, A, 2011-12, Vol.120 (6A), p.A-22-A-24

2011

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Comparison of defect structure in Si and Ge ion implanted GaN epilayers by RBS/channeling

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2019-04, Vol.444, p.74-79

2019

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Analysis of defect structure in GaN epilayers doped with implanted Si+ by RBS/c method

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2019-07, Vol.450, p.248-251

2019

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Photoconductive and electro-optic effects in (Cd,Mg)Te single crystals measured in an experiment-on-chip configuration

Applied physics letters, 2017-07, Vol.111 (1)

2017

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ZnO–GaN tunnel junction for transparent ohmic contacts to p-GaN

Journal of alloys and compounds, 2004-05, Vol.371 (1-2), p.129-132

2004

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Sulphur passivation of GaSb, InGaAsSb and AlGaAsSb surfaces

Physica status solidi. C, 2007-04, Vol.4 (4), p.1448-1453

2007

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Transparent ohmic contacts to GaSb/In(Al)GaAsSb photovoltaic cells

Physica status solidi. A, Applications and materials science, 2007-04, Vol.204 (4), p.1051-1055

2007

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Two-Probe Measurements of Electron Transport in GaN:Si/(Ga,Mn)N/GaN:Si Spin Filter Structures

Acta physica Polonica, A, 2016-11, Vol.130 (5), p.1196-1198

2016

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Thermally stable Ru-Si-O gate electrode for AlGaN/GaN HEMT

Physica status solidi. C, 2005-01, Vol.2 (3), p.1060-1064

2005

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Technology of Ultrathin NbN and NbTiN Films for Superconducting Photodetectors

Acta physica Polonica, A, 2011-12, Vol.120 (6A), p.A-76-A-79

2011

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Fabrication and Characterization of n-ZnO/p-SiC Heterojunction Diode

Materials science forum, 2012, Vol.717-720, p.1323-1326

2012

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Fabrication of GaSb Microlenses by Photo and E-Beam Lithography and Dry Etching

Solid state phenomena, 2004-01, Vol.99-100, p.83-88

2004

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Study of long-term stability of ohmic contacts to GaN

Physica status solidi. C, 2004-02, Vol.1 (2), p.219-222

2004

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GaAs/AlGaAs photonic crystals for VCSEL-type semiconductor lasers

Opto-electronics review, 2011, Vol.19 (1), p.51-55

2011

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Influence of Thermal and Gamma Radiation on Electrical Properties of Thin NiO Films Formed by RF Sputtering

Procedia engineering, 2011, Vol.25, p.367-370

2011

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Stretching magnetism with an electric field in a nitride semiconductor

Monolithic high-index contrast grating: a material independent high-reflectance VCSEL mirror

Photoconductive and electro-optic effects in (Cd,Mg)Te single crystals measured in an experiment-on-chip configuration

High-temperature ultraviolet detection based on surface photovoltage effect in SiN passivated n-GaN films

Application of scanning thermal microscopy for investigation of thermal boundaries in multilayered photonic structures

Magnetically active vacancy related defects in irradiated GaN layers

Characterization of Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC MOS structures

Nanocrystalline sputter-deposited ZnMgO:Al transparent p-type electrode in GaN-based 385nm UV LED for significant emission enhancement

Characterization of (Cd,Mn)Te and (Cd,Mg)Te single crystals in the THz frequency range using integrated photoconductive and electro-optic effects

Proton implantation for the isolation of AlGaAs/GaAs quantum cascade lasers

High Quality Gate Insulator/GaN Interface for Enhancement-Mode Field Effect Transistor

Comparison of defect structure in Si and Ge ion implanted GaN epilayers by RBS/channeling

Analysis of defect structure in GaN epilayers doped with implanted Si+ by RBS/c method

Photoconductive and electro-optic effects in (Cd,Mg)Te single crystals measured in an experiment-on-chip configuration

ZnO–GaN tunnel junction for transparent ohmic contacts to p-GaN

Sulphur passivation of GaSb, InGaAsSb and AlGaAsSb surfaces

Transparent ohmic contacts to GaSb/In(Al)GaAsSb photovoltaic cells

Two-Probe Measurements of Electron Transport in GaN:Si/(Ga,Mn)N/GaN:Si Spin Filter Structures

Thermally stable Ru-Si-O gate electrode for AlGaN/GaN HEMT

Technology of Ultrathin NbN and NbTiN Films for Superconducting Photodetectors

Fabrication and Characterization of n-ZnO/p-SiC Heterojunction Diode

Fabrication of GaSb Microlenses by Photo and E-Beam Lithography and Dry Etching

Study of long-term stability of ohmic contacts to GaN

GaAs/AlGaAs photonic crystals for VCSEL-type semiconductor lasers

Influence of Thermal and Gamma Radiation on Electrical Properties of Thin NiO Films Formed by RF Sputtering

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