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An independent relationship between muscle sympathetic nerve activity and pulse wave velocity in normal humans

Journal of hypertension, 2010-05, Vol.28 (5), p.979-984

2010

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Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition

Nanomaterials (Basel, Switzerland), 2021-12, Vol.11 (12), p.3316

2021

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Electric‐Field Enhancement of Electron Emission Rates for Deep‐Level Traps in n‐type GaN

physica status solidi (b), 2023-08, Vol.260 (8), p.n/a

2023

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Reflectivity of Plasmon–Phonon Modes in Grating‐Coupled AlGaN/GaN Heterostructures Grown on SiC and GaN Substrates (Phys. Status Solidi B 5/2018)

physica status solidi (b), 2018-05, Vol.255 (5), p.n/a

2018

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An independent relationship between muscle sympathetic nerve activity and pulse wave velocity in normal humans

Journal of hypertension, 2010-05, Vol.28 (5), p.979-984

2010

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Terahertz Electroluminescence of Shallow Impurities in AlGaN/GaN Heterostructures at Temperatures above 80 K

physica status solidi (b), 2018-05, Vol.255 (5), p.n/a

2018

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Reflectivity of Plasmon–Phonon Modes in Grating‐Coupled AlGaN/GaN Heterostructures Grown on SiC and GaN Substrates

physica status solidi (b), 2018-05, Vol.255 (5), p.n/a

2018

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AlGaN HEMTs on patterned resistive/conductive SiC templates

Journal of crystal growth, 2017-04, Vol.464, p.159-163

2017

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Properties of AlGaN/GaN Ni/Au‐Schottky diodes on 2°‐off silicon carbide substrates

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.n/a

2017

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Editorial of the Special Issue “New frontiers in wide-bandgap semiconductors and heterostructures for electronics, optoelectronics and sensing”

Materials science in semiconductor processing, 2019-11, Vol.102, p.104581, Article 104581

2019

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Properties of AlGaN/GaN Ni/Au-Schottky diodes on 2 degree -off silicon carbide substrates

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.np-np

2017

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Properties of AlGaN/GaN Ni/Au-Schottky diodes on 2°-off silicon carbide substrates: Properties of Ni/Au-Schottky diodes on SiC substrates

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.1600376

2017

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Terahertz electroluminescence of shallow impurities in AlGaN/GaN heterostructures at 20 K and 110 K temperature

Materials science in semiconductor processing, 2019-04, Vol.93, p.280-283

2019

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MBE grown GaN/AlGaN lateral Schottky barrier diodes for high frequency applications

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2016-03, Vol.34 (2)

2016

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Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors

Physica status solidi. A, Applications and materials science, 2018-05, Vol.215 (10), p.n/a

2018

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Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition

Materials science in semiconductor processing, 2019-07, Vol.97, p.35-39

2019

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Hafnium dioxide as a passivating layer and diffusive barrier in ZnO/Ag Schottky junctions obtained by atomic layer deposition

Applied physics letters, 2011-06, Vol.98 (26), p.263502-263502-3

2011

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Trap levels in the atomic layer deposition-ZnO/GaN heterojunction—Thermal admittance spectroscopy studies

Journal of applied physics, 2013-05, Vol.113 (19)

2013

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Statin Use and Cognitive Impairment in Patients With Type 1 Diabetes: An Observational Study

Clinical neuropharmacology, 2016-07, Vol.39 (4), p.182-187

2016

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Electrical and structural properties of Ti/Al-based contacts on AlGaN/GaN heterostructures with different quality

Physica status solidi. A, Applications and materials science, 2015-05, Vol.212 (5), p.1091-1098

2015

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Potentialities of AlGaN/GaN Heterostructures Grown on 2°-Off 4H-SiC Substrates

Materials science forum, 2014-10, Vol.806, p.73-80

2014

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Re: Migraine and retinal microvascular abnormalities: the Atherosclerosis Risk in Communities Study

Neurology, 2008-02, Vol.70 (7), p.579; author reply 579

2008

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Headache in patients with mild to moderate hypertension is generally not associated with simultaneous blood pressure elevation

Journal of hypertension, 2000-04, Vol.18 (4), p.437-444

2000

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Shortlasting, Unilateral, Neuralgiform Headache Attacks With Conjunctival Injection and Tearing (SUNCT Syndrome): V. Orbital Phlebography

Cephalalgia, 1992-12, Vol.12 (6), p.387-389

Kruszewski, Piotr

1992

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SUNCT Syndrome: Trials of Drugs and Anesthetic Blockades

Headache, 1995-03, Vol.35 (3), p.138-142

1995

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An independent relationship between muscle sympathetic nerve activity and pulse wave velocity in normal humans

Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition

Electric‐Field Enhancement of Electron Emission Rates for Deep‐Level Traps in n‐type GaN

Reflectivity of Plasmon–Phonon Modes in Grating‐Coupled AlGaN/GaN Heterostructures Grown on SiC and GaN Substrates (Phys. Status Solidi B 5/2018)

An independent relationship between muscle sympathetic nerve activity and pulse wave velocity in normal humans

Terahertz Electroluminescence of Shallow Impurities in AlGaN/GaN Heterostructures at Temperatures above 80 K

Reflectivity of Plasmon–Phonon Modes in Grating‐Coupled AlGaN/GaN Heterostructures Grown on SiC and GaN Substrates

AlGaN HEMTs on patterned resistive/conductive SiC templates

Properties of AlGaN/GaN Ni/Au‐Schottky diodes on 2°‐off silicon carbide substrates

Editorial of the Special Issue “New frontiers in wide-bandgap semiconductors and heterostructures for electronics, optoelectronics and sensing”

Properties of AlGaN/GaN Ni/Au-Schottky diodes on 2 degree -off silicon carbide substrates

Properties of AlGaN/GaN Ni/Au-Schottky diodes on 2°-off silicon carbide substrates: Properties of Ni/Au-Schottky diodes on SiC substrates

Terahertz electroluminescence of shallow impurities in AlGaN/GaN heterostructures at 20 K and 110 K temperature

MBE grown GaN/AlGaN lateral Schottky barrier diodes for high frequency applications

Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors

Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition

Hafnium dioxide as a passivating layer and diffusive barrier in ZnO/Ag Schottky junctions obtained by atomic layer deposition

Trap levels in the atomic layer deposition-ZnO/GaN heterojunction—Thermal admittance spectroscopy studies

Statin Use and Cognitive Impairment in Patients With Type 1 Diabetes: An Observational Study

Electrical and structural properties of Ti/Al-based contacts on AlGaN/GaN heterostructures with different quality

Potentialities of AlGaN/GaN Heterostructures Grown on 2°-Off 4H-SiC Substrates

Re: Migraine and retinal microvascular abnormalities: the Atherosclerosis Risk in Communities Study

Headache in patients with mild to moderate hypertension is generally not associated with simultaneous blood pressure elevation

Shortlasting, Unilateral, Neuralgiform Headache Attacks With Conjunctival Injection and Tearing (SUNCT Syndrome): V. Orbital Phlebography

SUNCT Syndrome: Trials of Drugs and Anesthetic Blockades

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