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Radiation induced recombination centers in organic solar cells

Physical review. B, Condensed matter and materials physics, 2012-05, Vol.85 (20), Article 205211

2012

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Phase separation in InGaN/GaN multiple quantum wells

Applied physics letters, 1998-04, Vol.72 (14), p.1730-1732

1998

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Utilizing high resolution and reconfigurable patterns in combination with inkjet printing to produce high performance circuits

Applied physics letters, 2014-09, Vol.105 (12)

2014

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Effect of composition on the band gap of strained InxGa1−xN alloys

Journal of applied physics, 2003-04, Vol.93 (7), p.4340-4342

2003

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Microstructure of GaN epitaxy on SiC using AlN buffer layers

Applied physics letters, 1995-07, Vol.67 (3), p.410-412

1995

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Structure of GaN films grown by hydride vapor phase epitaxy

Applied physics letters, 1997-10, Vol.71 (16), p.2283-2285

1997

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Polycrystalline nitride semiconductor light-emitting diodes fabricated on quartz substrates

Applied physics letters, 2000-04, Vol.76 (16), p.2182-2184

2000

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Interdiffusion of In and Ga in InGaN quantum wells

Applied physics letters, 1998-08, Vol.73 (9), p.1281-1283

1998

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Structural and optical properties of pseudomorphic InxGa1−xN alloys

Applied physics letters, 1998-09, Vol.73 (13), p.1757-1759

1998

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Digitally fabricated multi-modal wireless sensing using a combination of printed sensors and transistors with silicon components

Flexible and printed electronics, 2017-09, Vol.2 (3), p.34002

2017

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Electronic and structural properties of GaN grown by hydride vapor phase epitaxy

Applied physics letters, 1996-07, Vol.69 (2), p.242-244

1996

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Structure of GaN films grown by molecular beam epitaxy on (0001) sapphire

Journal of electronic materials, 1997-03, Vol.26 (3), p.285-289

1997

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610-nm band AlGaInP single quantum well laser diode

IEEE photonics technology letters, 1994-02, Vol.6 (2), p.128-131

1994

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Characterization of AlGaInN diode lasers with mirrors from chemically assisted ion beam etching

Applied physics letters, 1998-03, Vol.72 (13), p.1539-1541

1998

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MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-05, Vol.59 (1), p.33-38

1999

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The effect of a Ga prelayer on the beginning of GaAs epitaxy on Si

Journal of applied physics, 1988-10, Vol.64 (7), p.3472-3475

1988

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Graded-thickness samples for molecular beam epitaxial growth studies of GaAs/Si heteroepitaxy

Applied physics letters, 1988-05, Vol.52 (21), p.1779-1781

1988

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Low threshold, 633 nm, single tensile-strained quantum well Ga0.6In0.4P/(Al x Ga1− x )0.5In0.5P laser

Applied physics letters, 1992-04, Vol.60 (16), p.1927-1929

1992

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Low threshold GaxIn1-xP/(AlyGa1-y)0.5In0.5P strained quantum well lasers

Journal of crystal growth, 1992-11, Vol.124 (1-4), p.751-756

1992

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Phase separation in annealed InGaN/GaN multiple quantum wells

Journal of crystal growth, 1998-06, Vol.189-190, p.33-36

1998

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Amorphous Silicon Backplane with Polymer MEMS Structures for Electrophoretic Displays

MRS proceedings, 2004, Vol.808, Article A10.8

2004

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Characteristics of InGaN-AlGaN multiple-quantum-well laser diodes

IEEE journal of selected topics in quantum electronics, 1998-05, Vol.4 (3), p.498-504

1998

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Effect of Si doping on the strain and defect structure of GaN thin films

Physica. B, Condensed matter, 1999-12, Vol.273-274, p.50-53

1999

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Characterization of OMVPE-Grown AlGaInN Heterostructures

MRS proceedings, 1996, Vol.449, Article 509

1996

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Structural Characterization of Thick Gan Films Grown by Hydride Vapor Phase Epitaxy

MRS proceedings, 1996, Vol.423, Article 245

1996

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Radiation induced recombination centers in organic solar cells

Phase separation in InGaN/GaN multiple quantum wells

Utilizing high resolution and reconfigurable patterns in combination with inkjet printing to produce high performance circuits

Effect of composition on the band gap of strained InxGa1−xN alloys

Microstructure of GaN epitaxy on SiC using AlN buffer layers

Structure of GaN films grown by hydride vapor phase epitaxy

Polycrystalline nitride semiconductor light-emitting diodes fabricated on quartz substrates

Interdiffusion of In and Ga in InGaN quantum wells

Structural and optical properties of pseudomorphic InxGa1−xN alloys

Digitally fabricated multi-modal wireless sensing using a combination of printed sensors and transistors with silicon components

Electronic and structural properties of GaN grown by hydride vapor phase epitaxy

Structure of GaN films grown by molecular beam epitaxy on (0001) sapphire

610-nm band AlGaInP single quantum well laser diode

Characterization of AlGaInN diode lasers with mirrors from chemically assisted ion beam etching

MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes

The effect of a Ga prelayer on the beginning of GaAs epitaxy on Si

Graded-thickness samples for molecular beam epitaxial growth studies of GaAs/Si heteroepitaxy

Low threshold, 633 nm, single tensile-strained quantum well Ga0.6In0.4P/(Al x Ga1− x )0.5In0.5P laser

Low threshold GaxIn1-xP/(AlyGa1-y)0.5In0.5P strained quantum well lasers

Phase separation in annealed InGaN/GaN multiple quantum wells

Amorphous Silicon Backplane with Polymer MEMS Structures for Electrophoretic Displays

Characteristics of InGaN-AlGaN multiple-quantum-well laser diodes

Effect of Si doping on the strain and defect structure of GaN thin films

Characterization of OMVPE-Grown AlGaInN Heterostructures

Structural Characterization of Thick Gan Films Grown by Hydride Vapor Phase Epitaxy

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