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Radiation induced recombination centers in organic solar cells

Physical review. B, Condensed matter and materials physics, 2012-05, Vol.85 (20), Article 205211

2012

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Utilizing high resolution and reconfigurable patterns in combination with inkjet printing to produce high performance circuits

Applied physics letters, 2014-09, Vol.105 (12)

2014

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Printing Methods and Materials for Large-Area Electronic Devices

Proceedings of the IEEE, 2005-08, Vol.93 (8), p.1491-1499

2005

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Phase separation in InGaN/GaN multiple quantum wells

Applied physics letters, 1998-04, Vol.72 (14), p.1730-1732

1998

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Polycrystalline pentacene thin films for large area electronic applications

Journal of non-crystalline solids, 2002-04, Vol.299, p.1042-1046

2002

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Digitally fabricated multi-modal wireless sensing using a combination of printed sensors and transistors with silicon components

Flexible and printed electronics, 2017-09, Vol.2 (3), p.34002

2017

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Effect of composition on the band gap of strained InxGa1−xN alloys

Journal of applied physics, 2003-04, Vol.93 (7), p.4340-4342

2003

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Microstructure of GaN epitaxy on SiC using AlN buffer layers

Applied physics letters, 1995-07, Vol.67 (3), p.410-412

1995

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Structure of GaN films grown by hydride vapor phase epitaxy

Applied physics letters, 1997-10, Vol.71 (16), p.2283-2285

1997

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Polycrystalline nitride semiconductor light-emitting diodes fabricated on quartz substrates

Applied physics letters, 2000-04, Vol.76 (16), p.2182-2184

2000

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Interdiffusion of In and Ga in InGaN quantum wells

Applied physics letters, 1998-08, Vol.73 (9), p.1281-1283

1998

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Structural and optical properties of pseudomorphic InxGa1−xN alloys

Applied physics letters, 1998-09, Vol.73 (13), p.1757-1759

1998

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Electronic and structural properties of GaN grown by hydride vapor phase epitaxy

Applied physics letters, 1996-07, Vol.69 (2), p.242-244

1996

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Characterization of AlGaInN diode lasers with mirrors from chemically assisted ion beam etching

Applied physics letters, 1998-03, Vol.72 (13), p.1539-1541

1998

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Structure of GaN films grown by molecular beam epitaxy on (0001) sapphire

Journal of electronic materials, 1997-03, Vol.26 (3), p.285-289

1997

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Micro-electro-mechanical system fabrication technology applied to large area x-ray image sensor arrays

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2001-07, Vol.19 (4), p.1219-1223

2001

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610-nm band AlGaInP single quantum well laser diode

IEEE photonics technology letters, 1994-02, Vol.6 (2), p.128-131

1994

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Comparison of Organic Pulse-Generator Circuits for Ferroelectric Memories Fabricated by All-Additive Printing

ECS transactions, 2013, Vol.54 (1), p.165-170

2013

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Pentacene Thin Film Transistors and Circuits: Influence of Processing and Device Design

MRS proceedings, 2002, Vol.725, Article P5.2

2002

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Phase separation in annealed InGaN/GaN multiple quantum wells

Journal of crystal growth, 1998-06, Vol.189-190, p.33-36

1998

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MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-05, Vol.59 (1), p.33-38

1999

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Amorphous Silicon Backplane with Polymer MEMS Structures for Electrophoretic Displays

MRS proceedings, 2004, Vol.808, Article A10.8

2004

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Characteristics of InGaN-AlGaN multiple-quantum-well laser diodes

IEEE journal of selected topics in quantum electronics, 1998-05, Vol.4 (3), p.498-504

1998

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Effect of Si doping on the strain and defect structure of GaN thin films

Physica. B, Condensed matter, 1999-12, Vol.273-274, p.50-53

1999

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Low threshold, 633 nm, single tensile-strained quantum well Ga0.6In0.4P/(Al x Ga1− x )0.5In0.5P laser

Applied physics letters, 1992-04, Vol.60 (16), p.1927-1929

1992

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Radiation induced recombination centers in organic solar cells

Utilizing high resolution and reconfigurable patterns in combination with inkjet printing to produce high performance circuits

Printing Methods and Materials for Large-Area Electronic Devices

Phase separation in InGaN/GaN multiple quantum wells

Polycrystalline pentacene thin films for large area electronic applications

Digitally fabricated multi-modal wireless sensing using a combination of printed sensors and transistors with silicon components

Effect of composition on the band gap of strained InxGa1−xN alloys

Microstructure of GaN epitaxy on SiC using AlN buffer layers

Structure of GaN films grown by hydride vapor phase epitaxy

Polycrystalline nitride semiconductor light-emitting diodes fabricated on quartz substrates

Interdiffusion of In and Ga in InGaN quantum wells

Structural and optical properties of pseudomorphic InxGa1−xN alloys

Electronic and structural properties of GaN grown by hydride vapor phase epitaxy

Characterization of AlGaInN diode lasers with mirrors from chemically assisted ion beam etching

Structure of GaN films grown by molecular beam epitaxy on (0001) sapphire

Micro-electro-mechanical system fabrication technology applied to large area x-ray image sensor arrays

610-nm band AlGaInP single quantum well laser diode

Comparison of Organic Pulse-Generator Circuits for Ferroelectric Memories Fabricated by All-Additive Printing

Pentacene Thin Film Transistors and Circuits: Influence of Processing and Device Design

Phase separation in annealed InGaN/GaN multiple quantum wells

MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes

Amorphous Silicon Backplane with Polymer MEMS Structures for Electrophoretic Displays

Characteristics of InGaN-AlGaN multiple-quantum-well laser diodes

Effect of Si doping on the strain and defect structure of GaN thin films

Low threshold, 633 nm, single tensile-strained quantum well Ga0.6In0.4P/(Al x Ga1− x )0.5In0.5P laser

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