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Reduction of charge trapping and electron tunneling in SIMOX by supplemental implantation of oxygen

IEEE transactions on nuclear science, 1993-12, Vol.40 (6), p.1740-1747

1993

Volltextzugriff (PDF)

Beam Angular Divergence Effects in Ion Implantation

AIP conference proceedings, 2008, Vol.1066 (1), p.403-406

2008

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Charge trapping and transport properties of SIMOX buried oxides with a supplemental oxygen implant

IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), 1993-12, Vol.40 (6), p.1748-1754

1993

Volltextzugriff (PDF)

Improvement in electrical properties of buried SiO2 layers by high-temperature oxidation

Applied physics letters, 1995-11, Vol.67 (22), p.3283-3285

1995

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Improved Re-Crystallization of p+ Poly-Si Gates with Molecular Ion Implantation

Ion Implantation Technology 2008, 2008, Vol.1066, p.395-398

2008

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Investigation of Converted p+ poly-Si Gate Formed by B18HX+ Cluster Ion Implantation

Ion Implantation Technology, 2006, Vol.866, p.163-166

2006

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Ultrashallow (<10nm) p+∕n junction formed by B18H22 cluster ion implantation and excimer laser annealing

Applied physics letters, 2006-12, Vol.89 (24)

2006

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(Invited) Strained Si:C Using ClusterCarbon Implant

ECS transactions, 2010, Vol.28 (1), p.53-61

2010

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Total dose radiation effects for implanted buried oxides

IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), 1989-12, Vol.36 (6), p.2187-2191

1989

Volltextzugriff (PDF)

Determination of the fixed oxide charge and interface trap densities for buried oxide layers formed by oxygen implantation

Applied physics letters, 1988-03, Vol.52 (11), p.886-888

1988

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Increased junction breakdown voltages in silicon-on-insulator diodes

IEEE transactions on electron devices, 1989-03, Vol.36 (3), p.488-492

1989

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An electrical study of SIMOX material by a quick-turn-around approach

Solid-state electronics, 1990-12, Vol.33 (12), p.1643-1646

1990

Volltextzugriff (PDF)

Ultrashallow ( < 10 nm ) p + ∕ n junction formed by B 18 H 22 cluster ion implantation and excimer laser annealing

Applied physics letters, 2006-12, Vol.89 (24), p.243516-243516-3

2006

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C-V and C-t analysis of buried oxide layers formed by high-dose oxygen implantation

Journal of electronic materials, 1989-05, Vol.18 (3), p.385-389

1989

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Sources of SIMOX buried oxide leakage

Microelectronic engineering, 1995-06, Vol.28 (1), p.407-410

1995

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Ultrashallow (<10 nm) p{sup +}/n junction formed by B{sub 18}H{sub 22} cluster ion implantation and excimer laser annealing

Applied physics letters, 2006-12, Vol.89 (24)

2006

Volltextzugriff (PDF)

A new technique for determining the generation lifetime profile in thin semiconductor films with application to silicon-on-insulator (SOI) substrates

IEEE electron device letters, 1989-11, Vol.10 (11), p.496-499

1989

Volltextzugriff (PDF)

Ultrashallow P+/n junction formed by B18H22+ Ion Implantation and Excimer Laser Annealing

Ion Implantation Technology, 2006-01, Vol.866, p.171-173

2006

Volltextzugriff (PDF)

Radiation-induced charge trapping in implanted buried oxides

Journal of applied physics, 1990-12, Vol.68 (12), p.6143-6148

1990

Volltextzugriff (PDF)

Neutron irradiation effects on AlGaAs/GaAs heterojunction bipolar transistors

IEEE transactions on nuclear science, 1988-12, Vol.35 (6), p.1657-1661

1988

Volltextzugriff (PDF)

A study of the effects of processing on the response of implanted buried oxides to total dose irradiation

IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), 1990-12, Vol.37 (6), p.1995-2000

1990

Volltextzugriff (PDF)

Electrical and radiation characterization of three SOI material technologies

IEEE circuits and devices magazine, 1987-07, Vol.3 (4), p.20-26

1987

Volltextzugriff (PDF)

On the presence of the zero point energy noise term in thermal noise

Physica B + C, 1980-01, Vol.100 (1), p.97-98

1980

Volltextzugriff (PDF)

Reduction of charge trappings and electron tunneling in SIMOX by supplemental implantation of oxygen

IEEE transactions on nuclear science, 1993-12, Vol.40 (6), p.1740-1747

1993

Volltextzugriff (PDF)

Characteristics of ultrashallow p+/n junction prepared cluster boron (B18H22) ion implantation and excimer laser annealing

2006 International Workshop on Junction Technology, 2006, p.48-49

2006

Volltextzugriff (PDF)

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Reduction of charge trapping and electron tunneling in SIMOX by supplemental implantation of oxygen

Beam Angular Divergence Effects in Ion Implantation

Charge trapping and transport properties of SIMOX buried oxides with a supplemental oxygen implant

Improvement in electrical properties of buried SiO2 layers by high-temperature oxidation

Improved Re-Crystallization of p+ Poly-Si Gates with Molecular Ion Implantation

Investigation of Converted p+ poly-Si Gate Formed by B18HX+ Cluster Ion Implantation

Ultrashallow (<10nm) p+∕n junction formed by B18H22 cluster ion implantation and excimer laser annealing

(Invited) Strained Si:C Using ClusterCarbon Implant

Total dose radiation effects for implanted buried oxides

Determination of the fixed oxide charge and interface trap densities for buried oxide layers formed by oxygen implantation

Increased junction breakdown voltages in silicon-on-insulator diodes

An electrical study of SIMOX material by a quick-turn-around approach

Ultrashallow ( < 10 nm ) p + ∕ n junction formed by B 18 H 22 cluster ion implantation and excimer laser annealing

C-V and C-t analysis of buried oxide layers formed by high-dose oxygen implantation

Sources of SIMOX buried oxide leakage

Ultrashallow (<10 nm) p{sup +}/n junction formed by B{sub 18}H{sub 22} cluster ion implantation and excimer laser annealing

A new technique for determining the generation lifetime profile in thin semiconductor films with application to silicon-on-insulator (SOI) substrates

Ultrashallow P+/n junction formed by B18H22+ Ion Implantation and Excimer Laser Annealing

Radiation-induced charge trapping in implanted buried oxides

Neutron irradiation effects on AlGaAs/GaAs heterojunction bipolar transistors

A study of the effects of processing on the response of implanted buried oxides to total dose irradiation

Electrical and radiation characterization of three SOI material technologies

On the presence of the zero point energy noise term in thermal noise

Reduction of charge trappings and electron tunneling in SIMOX by supplemental implantation of oxygen

Characteristics of ultrashallow p+/n junction prepared cluster boron (B18H22) ion implantation and excimer laser annealing

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