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Comparison of MSU and TAMU Heavy Ion Test Results and Evaluation Output Dependencies of SEUs for the LMK04832-SP

2023 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2023 NSREC), 2023, p.1-5

2023

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ELDRS Characterization up to 100 krad of Texas Instruments' Dual Amplifier LM158

2017 IEEE Radiation Effects Data Workshop (REDW), 2017, p.1-5

2017

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Analysis of Low Dose Rate Effects on Parasitic Bipolar Structures in CMOS Processes for Mixed-Signal Integrated Circuits

IEEE transactions on nuclear science, 2011-06, Vol.58 (3), p.1023-1031

2011

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ELDRS Characterization of Texas Instruments LM185, 1.2V Precision Reference: Retrograde Behavior Demonstrates Why Taking Interim Test Points Is Important

2014 IEEE Radiation Effects Data Workshop (REDW), 2014, p.1-4

2014

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Single Event Effects Characterization of Texas Instruments ADC12D1600CCMLS, 12 Bit, 3.2 GSPS Analog-to-Digital Converter with Static and Dynamic Inputs

2014 IEEE Radiation Effects Data Workshop (REDW), 2014, p.1-7

2014

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ELDRS Characterization to of Texas Instruments LMP2012 RRO Precision Amplifier

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2017, p.1-5

Kruckmeyer, Kirby

2017

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Enhanced Low Dose Rate Sensitivity at Ultra-Low Dose Rates

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2983-2990

2011

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Evaluation of an Accelerated ELDRS Test Using Molecular Hydrogen

IEEE transactions on nuclear science, 2010-12, Vol.57 (6), p.3419-3425

2010

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Use of Code Error and Beat Frequency Test Method to Identify Single Event Upset Sensitive Circuits in a 1 GHz Analog to Digital Converter

IEEE transactions on nuclear science, 2008-08, Vol.55 (4), p.2013-2018

2008

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A Study of Total Dose Mitigation Approaches for Charge Pumps in Phase-Locked Loop Applications

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.3038-3045

2011

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Single Event Transient Response Dependence on Operating Conditions for a Digital to Analog Converter

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3567-3572

2009

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Total Ionizing Dose Characterization of the Calibration Circuit of Texas Instruments' ADC12D1600CCMLS, 12b, 3.2 GSPS Analog-to-Digital Converter

2013 IEEE Radiation Effects Data Workshop (REDW), 2013, p.1-4

2013

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Single Event Transient Hardness of a New Complementary (npn + pnp) SiGe HBT Technology on Thick-Film SOI

IEEE transactions on nuclear science, 2010-12, Vol.57 (6), p.3293-3297

2010

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Enhancing Observability of Signal Composition and Error Signatures During Dynamic SEE Analog to Digital Device Testing

IEEE transactions on nuclear science, 2010-08, Vol.57 (4), p.1958-1965

2010

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ELDRS Characterization to 300 krad of Texas Instruments High Speed Amplifier LMH6702

2016 IEEE Radiation Effects Data Workshop (REDW), 2016, p.1-4

2016

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SEE Testing of National Semiconductor's LM98640QML System on a Chip for Focal Plane Arrays and Other Imaging Systems

2010 IEEE Radiation Effects Data Workshop, 2010, p.8-8

2010

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ELDRS Characterization up to 300 Krad of Texas Instruments High Speed Amplifiers, LM7171 and LM6172

2015 IEEE Radiation Effects Data Workshop (REDW), 2015, p.1-5

2015

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Impact of Reference Voltage on the ELDRS Characteristics of the LM4050 Shunt Voltage Reference

2011 IEEE Radiation Effects Data Workshop, 2011, p.1-5

2011

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Low Dose Rate Test Results of National Semiconductor's ELDRS-Free Bipolar Low Dropout (LDO) Regulator, LM2941 at Dose Rates of 1 and 10 Mrad(Si)/S

2009 IEEE Radiation Effects Data Workshop, 2009, p.59-64

2009

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Single Event Transient (SET) Response of National Semiconductor's ELDRS-Free LM139 Quad Comparator

2009 IEEE Radiation Effects Data Workshop, 2009, p.65-70

2009

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Total Ionizing Dose and Single Event Effects Test Results of Texas Instruments LMK04832-SP (5962R1722701 VXC) 3.2 GHz JESD204B Clock Jitter Cleaner with 14 Outputs

2021 IEEE Nuclear and Space Radiation Effects Conference (NSREC), 2021, p.1-8

2021

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Low Dose Rate Test Results of National Semiconductor's ELDRS-free Bipolar Amplifier LM124 and Comparators LM139 and LM193

2008 IEEE Radiation Effects Data Workshop, 2008, p.110-117

2008

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Low Dose Rate Test Results for National Semiconductor's ELDRS-Free LM136-2.5 Bipolar Reference

2009 IEEE Radiation Effects Data Workshop, 2009, p.47-50

2009

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Single Event Transient and ELDRS Characterization Test Results for LM4050QML 2.5V Precision Reference

2010 IEEE Radiation Effects Data Workshop, 2010, p.6-6

2010

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The Effects of ELDRS at Ultra-Low Dose Rates

2010 IEEE Radiation Effects Data Workshop, 2010, p.6-6

2010

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Comparison of MSU and TAMU Heavy Ion Test Results and Evaluation Output Dependencies of SEUs for the LMK04832-SP

ELDRS Characterization up to 100 krad of Texas Instruments' Dual Amplifier LM158

Analysis of Low Dose Rate Effects on Parasitic Bipolar Structures in CMOS Processes for Mixed-Signal Integrated Circuits

ELDRS Characterization of Texas Instruments LM185, 1.2V Precision Reference: Retrograde Behavior Demonstrates Why Taking Interim Test Points Is Important

Single Event Effects Characterization of Texas Instruments ADC12D1600CCMLS, 12 Bit, 3.2 GSPS Analog-to-Digital Converter with Static and Dynamic Inputs

ELDRS Characterization to of Texas Instruments LMP2012 RRO Precision Amplifier

Enhanced Low Dose Rate Sensitivity at Ultra-Low Dose Rates

Evaluation of an Accelerated ELDRS Test Using Molecular Hydrogen

Use of Code Error and Beat Frequency Test Method to Identify Single Event Upset Sensitive Circuits in a 1 GHz Analog to Digital Converter

A Study of Total Dose Mitigation Approaches for Charge Pumps in Phase-Locked Loop Applications

Single Event Transient Response Dependence on Operating Conditions for a Digital to Analog Converter

Total Ionizing Dose Characterization of the Calibration Circuit of Texas Instruments' ADC12D1600CCMLS, 12b, 3.2 GSPS Analog-to-Digital Converter

Single Event Transient Hardness of a New Complementary (npn + pnp) SiGe HBT Technology on Thick-Film SOI

Enhancing Observability of Signal Composition and Error Signatures During Dynamic SEE Analog to Digital Device Testing

ELDRS Characterization to 300 krad of Texas Instruments High Speed Amplifier LMH6702

SEE Testing of National Semiconductor's LM98640QML System on a Chip for Focal Plane Arrays and Other Imaging Systems

ELDRS Characterization up to 300 Krad of Texas Instruments High Speed Amplifiers, LM7171 and LM6172

Impact of Reference Voltage on the ELDRS Characteristics of the LM4050 Shunt Voltage Reference

Low Dose Rate Test Results of National Semiconductor's ELDRS-Free Bipolar Low Dropout (LDO) Regulator, LM2941 at Dose Rates of 1 and 10 Mrad(Si)/S

Single Event Transient (SET) Response of National Semiconductor's ELDRS-Free LM139 Quad Comparator

Total Ionizing Dose and Single Event Effects Test Results of Texas Instruments LMK04832-SP (5962R1722701 VXC) 3.2 GHz JESD204B Clock Jitter Cleaner with 14 Outputs

Low Dose Rate Test Results of National Semiconductor's ELDRS-free Bipolar Amplifier LM124 and Comparators LM139 and LM193

Low Dose Rate Test Results for National Semiconductor's ELDRS-Free LM136-2.5 Bipolar Reference

Single Event Transient and ELDRS Characterization Test Results for LM4050QML 2.5V Precision Reference

The Effects of ELDRS at Ultra-Low Dose Rates

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