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Binary copper oxide semiconductors: From materials towards devices

physica status solidi (b), 2012-08, Vol.249 (8), p.1487-1509

2012

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High Si and Ge n-type doping of GaN doping - Limits and impact on stress

Applied physics letters, 2012-03, Vol.100 (12), p.122104-122104-4

2012

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Growth of blue GaN LED structures on 150-mm Si(1 1 1)

Journal of crystal growth, 2006-12, Vol.297 (2), p.279-282

2006

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Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction

New journal of physics, 2007-10, Vol.9 (10), p.389-389

2007

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GaN-Based Devices on Si

Physica status solidi. A, Applied research, 2002-12, Vol.194 (2), p.361-375

2002

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Germanium - the superior dopant in n-type GaN

Physica status solidi. PSS-RRL. Rapid research letters, 2015-12, Vol.9 (12), p.716-721

2015

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Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN

Journal of physics. D, Applied physics, 2010-09, Vol.43 (36), p.365102-365102

2010

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Atomic arrangement at the AlN/Si (111) interface

Applied physics letters, 2003-08, Vol.83 (5), p.860-862

2003

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Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers and in situ SixNy masking

Applied physics letters, 2002-05, Vol.80 (20), p.3670-3672

2002

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High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111)

Applied physics letters, 2004-11, Vol.85 (22), p.5400-5402

2004

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Termination of hollow core nanopipes in GaN by an AlN interlayer

Journal of crystal growth, 2016-12, Vol.455, p.43-48

2016

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MOVPE growth of GaN on Si – Substrates and strain

Thin solid films, 2007-03, Vol.515 (10), p.4356-4361

2007

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GaN-based epitaxy on silicon: stress measurements

Physica status solidi. A, Applied research, 2003-11, Vol.200 (1), p.26-35

2003

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The origin of stress reduction by low-temperature AlN interlayers

Applied physics letters, 2002-10, Vol.81 (15), p.2722-2724

2002

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Improving GaN-on-silicon properties for GaN device epitaxy

Physica status solidi. C, 2011-05, Vol.8 (5), p.1503-1508

2011

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Fabry-Perot effects in InGaN∕GaN heterostructures on Si-substrate

Journal of applied physics, 2007-02, Vol.101 (3)

2007

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Green to blue polarization compensated c-axis oriented multi-quantum wells by AlGaInN barrier layers

Applied physics letters, 2013-02, Vol.102 (6)

2013

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Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality

Journal of crystal growth, 2015-03, Vol.414, p.105-109

2015

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Transient thermal characterization of AlGaN/GaN HEMTs grown on silicon

IEEE transactions on electron devices, 2005-08, Vol.52 (8), p.1698-1705

2005

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Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si

Applied physics letters, 2002-12, Vol.81 (25), p.4712-4714

2002

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Structural and optical properties of size controlled Si nanocrystals in Si3N4 matrix: The nature of photoluminescence peak shift

Journal of applied physics, 2013-11, Vol.114 (18), p.184311

2013

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Reduction of stress at the initial stages of GaN growth on Si(111)

Applied physics letters, 2003-01, Vol.82 (1), p.28-30

2003

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Thermal stability of metal organic vapor phase epitaxy grown AlInN

Applied physics letters, 2007-05, Vol.90 (22), p.221906-221906-3

2007

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Piezoelectric GaN sensor structures

IEEE electron device letters, 2006-05, Vol.27 (5), p.309-312

2006

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Metalorganic vapor phase epitaxy grown InGaN∕GaN light-emitting diodes on Si(001) substrate

Applied physics letters, 2006-03, Vol.88 (12)

2006

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Binary copper oxide semiconductors: From materials towards devices

High Si and Ge n-type doping of GaN doping - Limits and impact on stress

Growth of blue GaN LED structures on 150-mm Si(1 1 1)

Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction

GaN-Based Devices on Si

Germanium - the superior dopant in n-type GaN

Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN

Atomic arrangement at the AlN/Si (111) interface

Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers and in situ SixNy masking

High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111)

Termination of hollow core nanopipes in GaN by an AlN interlayer

MOVPE growth of GaN on Si – Substrates and strain

GaN-based epitaxy on silicon: stress measurements

The origin of stress reduction by low-temperature AlN interlayers

Improving GaN-on-silicon properties for GaN device epitaxy

Fabry-Perot effects in InGaN∕GaN heterostructures on Si-substrate

Green to blue polarization compensated c-axis oriented multi-quantum wells by AlGaInN barrier layers

Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality

Transient thermal characterization of AlGaN/GaN HEMTs grown on silicon

Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si

Structural and optical properties of size controlled Si nanocrystals in Si3N4 matrix: The nature of photoluminescence peak shift

Reduction of stress at the initial stages of GaN growth on Si(111)

Thermal stability of metal organic vapor phase epitaxy grown AlInN

Piezoelectric GaN sensor structures

Metalorganic vapor phase epitaxy grown InGaN∕GaN light-emitting diodes on Si(001) substrate

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