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Reversible Conductance Switching in Molecular Devices

Advanced materials (Weinheim), 2008-04, Vol.20 (8), p.1467-1473

2008

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Two-Dimensional Carrier Distribution in Top-Gate Polymer Field-Effect Transistors: Correlation between Width of Density of Localized States and Urbach Energy

Advanced materials (Weinheim), 2014-02, Vol.26 (5), p.728-733

2014

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Molecular origin of high field-effect mobility in an indacenodithiophene-benzothiadiazole copolymer

Nature communications, 2013, Vol.4 (1), p.2238-2238, Article 2238

2013

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Impact of derivatization on electron transmission through dithienylethene-based photoswitches in molecular junctions

Physical chemistry chemical physics : PCCP, 2013-03, Vol.15 (12), p.4392-4404

2013

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A Selenophene-Based Low-Bandgap Donor-Acceptor Polymer Leading to Fast Ambipolar Logic

Advanced materials (Weinheim), 2012-03, Vol.24 (12), p.1558-1565

2012

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Upscaling, integration and electrical characterization of molecular junctions

Nature nanotechnology, 2008-12, Vol.3 (12), p.749-754

2008

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Self-Assembled-Monolayer Formation of Long Alkanedithiols in Molecular Junctions

Small (Weinheim an der Bergstrasse, Germany), 2008-01, Vol.4 (1), p.100-104

2008

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Stability of large-area molecular junctions

Organic electronics, 2010, Vol.11 (1), p.146-149

2010

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Binary self-assembled monolayers: Apparent exponential dependence of resistance on average molecular length

Organic electronics, 2011-05, Vol.12 (5), p.857-864

2011

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Polaron hopping mediated by nuclear tunnelling in semiconducting polymers at high carrier density

Nature communications, 2013, Vol.4 (1), p.1710-1710, Article 1710

2013

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High‐Throughput Atomic Layer Deposition of P‐Type SnO Thin Film Transistors Using Tin(II)bis(tert‐amyloxide)

Advanced materials interfaces, 2022-03, Vol.9 (9), p.n/a

2022

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A High‐Resolution Thin‐Film Fingerprint Sensor Using a Printed Organic Photodetector

Advanced materials technologies, 2019-11, Vol.4 (11), p.n/a

2019

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Influence of dielectric-dependent interfacial widths on device performance in top-gate P(NDI2OD-T2) field-effect transistors

Applied physics letters, 2012-08, Vol.101 (9), p.93308

2012

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Probing Charge Carrier Density in a Layer of Photodoped ZnO Nanoparticles by Spectroscopic Ellipsometry

Journal of physical chemistry. C, 2010-09, Vol.114 (35), p.14804-14810

2010

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Photovoltaic and field effect transistor performance of selenophene and thiophene diketopyrrolopyrrole co-polymers with dithienothiophene

Journal of materials chemistry, 2012-01, Vol.22 (25), p.12817-12823

2012

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14‐1: Flexible Large‐Area Multi‐Fingerprint Sensors based on Thermal Mass Detection

SID International Symposium Digest of technical papers, 2020-08, Vol.51 (1), p.176-179

2020

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Universal Scaling of the Charge Transport in Large-Area Molecular Junctions

Small (Weinheim an der Bergstrasse, Germany), 2011-06, Vol.7 (11), p.1593-1598

2011

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Molecular Electronics with Large-area Molecular Junctions

MRS proceedings, 2008, Vol.1091 (1), Article 1091-AA02-05

2008

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Reversible Conductance Switching in Molecular Devices

Advanced materials (Weinheim), 2008-04, Vol.20 (8), p.1467-1473

2008

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A Novel 2T Pixel Topology Enabling High Quality Optical Fingerprints

IEEE journal on flexible electronics, 2023-11, Vol.2 (6), p.1-1

2023

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Short‐Channel Vertical Organic Field‐Effect Transistors with High On/Off Ratios

Advanced electronic materials, 2019-05, Vol.5 (5), p.n/a

2019

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12.3 Memory Solutions for Flexible Thin-Film Logic: up to 8kb, >105.9kb/s LPROM and SRAM with Integrated Timing Generation Meeting the ISO NFC Standard

2019 IEEE International Solid- State Circuits Conference - (ISSCC), 2019, p.206-208

2019

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Impact of derivatization on electron transmission through dithienylethene-based photoswitches in molecular junctionsElectronic supplementary information (ESI) available. See DOI: 10.1039/c3cp44132f

2013-02

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Erratum: “Influence of dielectric-dependent interfacial widths on device performance in top-gate P(NDI2OD-T2) field-effect transistors” [Appl. Phys. Lett. 101, 093308 (2012)]

Applied physics letters, 2012-10, Vol.101 (17)

2012

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Extending the voltage window in the characterization of electrical transport of large-area molecular junctions

Applied physics letters, 2011-07, Vol.99 (1), p.013303-013303-3

2011

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Reversible Conductance Switching in Molecular Devices

Two-Dimensional Carrier Distribution in Top-Gate Polymer Field-Effect Transistors: Correlation between Width of Density of Localized States and Urbach Energy

Molecular origin of high field-effect mobility in an indacenodithiophene-benzothiadiazole copolymer

Impact of derivatization on electron transmission through dithienylethene-based photoswitches in molecular junctions

A Selenophene-Based Low-Bandgap Donor-Acceptor Polymer Leading to Fast Ambipolar Logic

Upscaling, integration and electrical characterization of molecular junctions

Self-Assembled-Monolayer Formation of Long Alkanedithiols in Molecular Junctions

Stability of large-area molecular junctions

Binary self-assembled monolayers: Apparent exponential dependence of resistance on average molecular length

Polaron hopping mediated by nuclear tunnelling in semiconducting polymers at high carrier density

High‐Throughput Atomic Layer Deposition of P‐Type SnO Thin Film Transistors Using Tin(II)bis(tert‐amyloxide)

A High‐Resolution Thin‐Film Fingerprint Sensor Using a Printed Organic Photodetector

Influence of dielectric-dependent interfacial widths on device performance in top-gate P(NDI2OD-T2) field-effect transistors

Probing Charge Carrier Density in a Layer of Photodoped ZnO Nanoparticles by Spectroscopic Ellipsometry

Photovoltaic and field effect transistor performance of selenophene and thiophene diketopyrrolopyrrole co-polymers with dithienothiophene

14‐1: Flexible Large‐Area Multi‐Fingerprint Sensors based on Thermal Mass Detection

Universal Scaling of the Charge Transport in Large-Area Molecular Junctions

Molecular Electronics with Large-area Molecular Junctions

Reversible Conductance Switching in Molecular Devices

A Novel 2T Pixel Topology Enabling High Quality Optical Fingerprints

Short‐Channel Vertical Organic Field‐Effect Transistors with High On/Off Ratios

12.3 Memory Solutions for Flexible Thin-Film Logic: up to 8kb, >105.9kb/s LPROM and SRAM with Integrated Timing Generation Meeting the ISO NFC Standard

Impact of derivatization on electron transmission through dithienylethene-based photoswitches in molecular junctionsElectronic supplementary information (ESI) available. See DOI: 10.1039/c3cp44132f

Erratum: “Influence of dielectric-dependent interfacial widths on device performance in top-gate P(NDI2OD-T2) field-effect transistors” [Appl. Phys. Lett. 101, 093308 (2012)]

Extending the voltage window in the characterization of electrical transport of large-area molecular junctions

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