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Nitrogen-related electron traps in Ga(As,N) layers (⩽3% N)

Journal of applied physics, 2003-05, Vol.93 (10), p.6095-6099

2003

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Electrical depth profile of p -type GaAs/Ga(As, N)/GaAs heterostructures determined by capacitance–voltage measurements

Journal of applied physics, 2000-10, Vol.88 (7), p.4153-4158

2000

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Electron traps in Ga(As,N) layers grown by molecular-beam epitaxy

Applied physics letters, 2002-03, Vol.80 (12), p.2120-2122

2002

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Origin and annealing of deep-level defects in p -type GaAs/Ga(As,N)/GaAs heterostructures grown by molecular beam epitaxy

Journal of applied physics, 2001-06, Vol.89 (11), p.6294-6301

2001

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Admittance dispersion of n-type GaAs/Ga(As, N)/GaAs heterostructures grown by molecular beam epitaxy

Journal of applied physics, 2001-09, Vol.90 (5), p.2405-2410

2001

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Polarization charges at spontaneously ordered (In, Ga)P/GaAs interfaces

Applied physics letters, 2002-04, Vol.80 (14), p.2493-2495

2002

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Avoidance of surface-related defects in MOVPE-grown InGaP layers

Journal of crystal growth, 2006-01, Vol.287 (2), p.633-636

2006

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Physica status solidi: November 16

G'rlich

2021

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Interlayer formation due to group V-hydride stabilization during interruptions of MOVPE growth of InGaP

Semiconductor science and technology, 2004-06, Vol.19 (6), p.680-684

2004

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Type-II band alignment between GaAs and inadvertent interlayers at (In,Ga)P/GaAs interfaces

Applied physics letters, 2002-07, Vol.81 (2), p.262-264

2002

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Deep and shallow electronic states at ultrathin InAs insertions in GaAs investigated by capacitance spectroscopy

Journal of applied physics, 1998-12, Vol.84 (11), p.6135-6140

1998

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Deep levels in GaAs/Al0.78Ga0.22As heterostructures

Physica. B, Condensed matter, 2007-12, Vol.401-402, p.266-269

2007

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Incorporation of nitrogen in nitride-arsenides: Origin of improved luminescence efficiency after anneal

Journal of applied physics, 2001-04, Vol.89 (8), p.4401-4406

2001

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Interface properties of isotype GaAs/(In,Ga)P/GaAs heterojunctions grown by metalorganic-vapour-phase epitaxy on GaAs

Journal of crystal growth, 2000-12, Vol.220 (3), p.220-225

2000

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Defect study of MOVPE-grown InGaP layers on GaAs

Journal of crystal growth, 2004-12, Vol.272 (1), p.627-632

2004

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Giant resistance changes in (Al,Ga)As contact layers of GaAs/AlAs superlattices due to deep donors

Journal of applied physics, 2001-11, Vol.90 (9), p.4560-4564

2001

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Ga(As,N) layers in the dilute N limit studied by depth-resolved capacitance spectroscopy

Applied physics letters, 2002-11, Vol.81 (21), p.3987-3989

2002

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Properties of (In,Ga)(As,P)/GaAs interfaces grown under different metalorganic vapor phase epitaxy conditions

Journal of crystal growth, 2003-02, Vol.248, p.364-368

2003

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Studies of deep-level defects at III–V heterointerfaces

Materials science & engineering. B, Solid-state materials for advanced technology, 1994-12, Vol.28 (1), p.387-392

Krispin, P.

1994

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Growth mode-related generation of electron traps at the inverted AlAs/GaAs interface

Journal of applied physics, 1998-02, Vol.83 (3), p.1496-1498

1998

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SixGe1−x films and heterojunctions produced by epitaxial crystallization of a-SixGe1−x alloys on GaAs

Journal of non-crystalline solids, 2004-06, Vol.338-340 (Complete), p.197-200

2004

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Deep-level defects in MBE-grown Ga(As,N) layers

Physica. B, Condensed matter, 2001-12, Vol.308, p.870-873

2001

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Dopant-dependent formation and annealing of the dominant native deep-level defect in liquid-phase epitaxial AlGaAs

Journal of applied physics, 1989-05, Vol.65 (9), p.3470-3476

KRISPIN, P

1989

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Deep electronic states near the surface of (In,Ga)P layers grown by MOVPE on GaAs

Physica. B, Condensed matter, 1999-12, Vol.273-274, p.815-818

1999

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Deep-level defects near the surface of Be-doped GaAs grown by molecular beam epitaxy

Physica. B, Condensed matter, 1999-12, Vol.273-274, p.693-696

1999

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Nitrogen-related electron traps in Ga(As,N) layers (⩽3% N)

Electrical depth profile of p -type GaAs/Ga(As, N)/GaAs heterostructures determined by capacitance–voltage measurements

Electron traps in Ga(As,N) layers grown by molecular-beam epitaxy

Origin and annealing of deep-level defects in p -type GaAs/Ga(As,N)/GaAs heterostructures grown by molecular beam epitaxy

Admittance dispersion of n-type GaAs/Ga(As, N)/GaAs heterostructures grown by molecular beam epitaxy

Polarization charges at spontaneously ordered (In, Ga)P/GaAs interfaces

Avoidance of surface-related defects in MOVPE-grown InGaP layers

Physica status solidi: November 16

Interlayer formation due to group V-hydride stabilization during interruptions of MOVPE growth of InGaP

Type-II band alignment between GaAs and inadvertent interlayers at (In,Ga)P/GaAs interfaces

Deep and shallow electronic states at ultrathin InAs insertions in GaAs investigated by capacitance spectroscopy

Deep levels in GaAs/Al0.78Ga0.22As heterostructures

Incorporation of nitrogen in nitride-arsenides: Origin of improved luminescence efficiency after anneal

Interface properties of isotype GaAs/(In,Ga)P/GaAs heterojunctions grown by metalorganic-vapour-phase epitaxy on GaAs

Defect study of MOVPE-grown InGaP layers on GaAs

Giant resistance changes in (Al,Ga)As contact layers of GaAs/AlAs superlattices due to deep donors

Ga(As,N) layers in the dilute N limit studied by depth-resolved capacitance spectroscopy

Properties of (In,Ga)(As,P)/GaAs interfaces grown under different metalorganic vapor phase epitaxy conditions

Studies of deep-level defects at III–V heterointerfaces

Growth mode-related generation of electron traps at the inverted AlAs/GaAs interface

SixGe1−x films and heterojunctions produced by epitaxial crystallization of a-SixGe1−x alloys on GaAs

Deep-level defects in MBE-grown Ga(As,N) layers

Dopant-dependent formation and annealing of the dominant native deep-level defect in liquid-phase epitaxial AlGaAs

Deep electronic states near the surface of (In,Ga)P layers grown by MOVPE on GaAs

Deep-level defects near the surface of Be-doped GaAs grown by molecular beam epitaxy

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