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Impact of negative bias temperature instability on digital circuit reliability

2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320), 2002, p.248-254

2002

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Fabrication of microcrystalline silicon TFTs using a high-density plasma approach

IEEE electron device letters, 2001-08, Vol.22 (8), p.399-401

2001

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Spin dependent recombination study of the atomic-scale effects of fluorine on the negative bias temperature instability

2009 IEEE International Reliability Physics Symposium, 2009, p.988-991

2009

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Probing negative bias temperature instability using a continuum numerical framework: Physics to real world operation

Microelectronics and reliability, 2007-06, Vol.47 (6), p.863-872

2007

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NBTI: An Atomic-Scale Defect Perspective

2006 IEEE International Reliability Physics Symposium Proceedings, 2006, p.442-447

2006

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Analytic Extension of the Cell-Based Oxide Breakdown Model to Full Percolation and its Implications

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual, 2007, p.232-239

2007

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Location, Structure, and Density of States of NBTI-Induced Defects in Plasma Nitrided pMOSFETs

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual, 2007, p.503-510

2007

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An Integrated Modeling Paradigm of Circuit Reliability for 65nm CMOS Technology

2007 IEEE Custom Integrated Circuits Conference, 2007, p.511-514

2007

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Investigation of SILC via Energy Resolved spin dependent tunneling spectroscopy

2009 IEEE International Integrated Reliability Workshop Final Report, 2009, p.1-4

2009

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Compact Modeling and Simulation of Circuit Reliability for 65-nm CMOS Technology

IEEE transactions on device and materials reliability, 2007-12, Vol.7 (4), p.509-517

2007

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Impact of gate area on plasma charging damage: the "reverse" antenna effect

Digest. International Electron Devices Meeting, 2002, p.525-528

2002

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The Current Understanding of the Trap Generation Mechanisms that Lead to the Power Law Model for Gate Dielectric Breakdown

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual, 2007, p.197-208

2007

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Atomic-scale defects involved in NBTI in plasma-nitrided pMOSFETs

2007 IEEE International Integrated Reliability Workshop Final Report, 2007, p.12-17

2007

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An Electrically-Detected Magnetic Resonance Study of the Atomic-Scale Effects of Fluorine on the Negative Bias Temperature Instability

2008 IEEE International Integrated Reliability Workshop Final Report, 2008, p.137-140

2008

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Impact of charging damage on negative bias temperature instability

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224), 2001, p.39.3.1-39.3.4

2001

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Material dependence of hydrogen diffusion: implications for NBTI degradation

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest, 2005, p.4 pp.-691

2005

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Modeling NBTI: kinetics to circuit

IEEE International Integrated Reliability Workshop Final Report, 2004, 2004, p.198-198

Krishnan, A.T.

2004

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Observations of NBTI-induced atomic-scale defects

IEEE transactions on device and materials reliability, 2006-06, Vol.6 (2), p.117-122

2006

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Observations of NBTI-induced atomic scale defects

2005 IEEE International Integrated Reliability Workshop, 2005, p.4 pp.

2005

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Atomic-scale defects involved in the negative-bias temperature instability

IEEE transactions on device and materials reliability, 2007-12, Vol.7 (4), p.540-557

2007

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Atomic scale defects involved in NBTI [MOSFET reliability]

IEEE International Integrated Reliability Workshop Final Report, 2004, 2004, p.118-120

2004

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Gate Leakage vs. NBTI in Plasma Nitrided Oxides: Characterization, Physical Principles, and Optimization

2006 International Electron Devices Meeting, 2006, p.1-4

2006

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The Traps that cause Breakdown in Deeply Scaled SiON Dielectrics

2006 International Electron Devices Meeting, 2006, p.1-4

2006

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SRAM Cell Static Noise Margin and VMIN Sensitivity to Transistor Degradation

2006 International Electron Devices Meeting, 2006, p.1-4

2006

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Comprehending scaling effects on plasma damage

2003 8th International Symposium Plasma- and Process-Induced Damage, 2003, p.28-31

2003

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Impact of negative bias temperature instability on digital circuit reliability

Fabrication of microcrystalline silicon TFTs using a high-density plasma approach

Spin dependent recombination study of the atomic-scale effects of fluorine on the negative bias temperature instability

Probing negative bias temperature instability using a continuum numerical framework: Physics to real world operation

NBTI: An Atomic-Scale Defect Perspective

Analytic Extension of the Cell-Based Oxide Breakdown Model to Full Percolation and its Implications

Location, Structure, and Density of States of NBTI-Induced Defects in Plasma Nitrided pMOSFETs

An Integrated Modeling Paradigm of Circuit Reliability for 65nm CMOS Technology

Investigation of SILC via Energy Resolved spin dependent tunneling spectroscopy

Compact Modeling and Simulation of Circuit Reliability for 65-nm CMOS Technology

Impact of gate area on plasma charging damage: the "reverse" antenna effect

The Current Understanding of the Trap Generation Mechanisms that Lead to the Power Law Model for Gate Dielectric Breakdown

Atomic-scale defects involved in NBTI in plasma-nitrided pMOSFETs

An Electrically-Detected Magnetic Resonance Study of the Atomic-Scale Effects of Fluorine on the Negative Bias Temperature Instability

Impact of charging damage on negative bias temperature instability

Material dependence of hydrogen diffusion: implications for NBTI degradation

Modeling NBTI: kinetics to circuit

Observations of NBTI-induced atomic-scale defects

Observations of NBTI-induced atomic scale defects

Atomic-scale defects involved in the negative-bias temperature instability

Atomic scale defects involved in NBTI [MOSFET reliability]

Gate Leakage vs. NBTI in Plasma Nitrided Oxides: Characterization, Physical Principles, and Optimization

The Traps that cause Breakdown in Deeply Scaled SiON Dielectrics

SRAM Cell Static Noise Margin and VMIN Sensitivity to Transistor Degradation

Comprehending scaling effects on plasma damage

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