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Downfolding of many-body Hamiltonians using active-space models: Extension of the sub-system embedding sub-algebras approach to unitary coupled cluster formalisms

The Journal of chemical physics, 2019-07, Vol.151 (1), p.014107-014107

2019

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Low temperature homoepitaxy of (010) β-Ga2O3 by metalorganic vapor phase epitaxy: Expanding the growth window

Applied physics letters, 2020-10, Vol.117 (14)

2020

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2.1 kV (001)-β-Ga2O3 vertical Schottky barrier diode with high-k oxide field plate

Applied physics letters, 2023-04, Vol.122 (15)

2023

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Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor

Applied physics letters, 2017-07, Vol.111 (2)

2017

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High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector

Applied physics letters, 2017-05, Vol.110 (22)

2017

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AlGaN channel field effect transistors with graded heterostructure ohmic contacts

Applied physics letters, 2016-09, Vol.109 (13)

2016

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Novel anti-inflammatory--pro-resolving mediators and their receptors

Current topics in medicinal chemistry, 2011-03, Vol.11 (6), p.629

2011

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Theoretical investigation of optical intersubband transitions and infrared photodetection in β-(AlxGa1 − x)2O3/Ga2O3 quantum well structures

Journal of applied physics, 2020-05, Vol.127 (17)

2020

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Vertical PtOx/Pt/β-Ga2O3 Schottky diodes with high permittivity dielectric field plate for low leakage and high breakdown voltage

Applied physics letters, 2023-11, Vol.123 (19)

2023

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Resolvin D1 Receptor Stereoselectivity and Regulation of Inflammation and Proresolving MicroRNAs

The American journal of pathology, 2012-05, Vol.180 (5), p.2018-2027

2012

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Over 6 μm thick MOCVD-grown low-background carrier density (1015 cm−3) high-mobility (010) β-Ga2O3 drift layers

Applied physics letters, 2024-01, Vol.124 (1)

2024

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High current density 2D/3D MoS2/GaN Esaki tunnel diodes

Applied physics letters, 2016-10, Vol.109 (18)

2016

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Tunnel-injected sub-260 nm ultraviolet light emitting diodes

Applied physics letters, 2017-05, Vol.110 (20)

2017

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Tunneling-based carrier regeneration in cascaded GaN light emitting diodes to overcome efficiency droop

Applied physics letters, 2013-08, Vol.103 (8), p.81107

2013

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Low resistance GaN/InGaN/GaN tunnel junctions

Applied physics letters, 2013-03, Vol.102 (11)

2013

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Delta-doped β-Ga2O3 films with narrow FWHM grown by metalorganic vapor-phase epitaxy

Applied physics letters, 2020-10, Vol.117 (17)

2020

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Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs

Applied physics letters, 2017-07, Vol.111 (5)

2017

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Interband tunneling for hole injection in III-nitride ultraviolet emitters

Applied physics letters, 2015-04, Vol.106 (14)

2015

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Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

Applied physics letters, 2016-09, Vol.109 (12)

2016

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Layer-transferred MoS2/GaN PN diodes

Applied physics letters, 2015-09, Vol.107 (10)

2015

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InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

Applied physics letters, 2014-10, Vol.105 (14)

2014

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Optical signatures of deep level defects in Ga2O3

Applied physics letters, 2018-06, Vol.112 (24)

2018

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Effect of extended defects on photoluminescence of gallium oxide and aluminum gallium oxide epitaxial films

Scientific reports, 2022-02, Vol.12 (1), p.3243-3243, Article 3243

2022

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Green’s function coupled cluster simulation of the near-valence ionizations of DNA-fragments

The Journal of chemical physics, 2020-01, Vol.152 (1), p.011101-011101

2020

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Mechanism of Si doping in plasma assisted MBE growth of β-Ga2O3

Applied physics letters, 2019-10, Vol.115 (15)

2019

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Downfolding of many-body Hamiltonians using active-space models: Extension of the sub-system embedding sub-algebras approach to unitary coupled cluster formalisms

Low temperature homoepitaxy of (010) β-Ga2O3 by metalorganic vapor phase epitaxy: Expanding the growth window

2.1 kV (001)-β-Ga2O3 vertical Schottky barrier diode with high-k oxide field plate

Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor

High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector

AlGaN channel field effect transistors with graded heterostructure ohmic contacts

Novel anti-inflammatory--pro-resolving mediators and their receptors

Theoretical investigation of optical intersubband transitions and infrared photodetection in β-(AlxGa1 − x)2O3/Ga2O3 quantum well structures

Vertical PtOx/Pt/β-Ga2O3 Schottky diodes with high permittivity dielectric field plate for low leakage and high breakdown voltage

Resolvin D1 Receptor Stereoselectivity and Regulation of Inflammation and Proresolving MicroRNAs

Over 6 μm thick MOCVD-grown low-background carrier density (1015 cm−3) high-mobility (010) β-Ga2O3 drift layers

High current density 2D/3D MoS2/GaN Esaki tunnel diodes

Tunnel-injected sub-260 nm ultraviolet light emitting diodes

Tunneling-based carrier regeneration in cascaded GaN light emitting diodes to overcome efficiency droop

Low resistance GaN/InGaN/GaN tunnel junctions

Delta-doped β-Ga2O3 films with narrow FWHM grown by metalorganic vapor-phase epitaxy

Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs

Interband tunneling for hole injection in III-nitride ultraviolet emitters

Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

Layer-transferred MoS2/GaN PN diodes

InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

Optical signatures of deep level defects in Ga2O3

Effect of extended defects on photoluminescence of gallium oxide and aluminum gallium oxide epitaxial films

Green’s function coupled cluster simulation of the near-valence ionizations of DNA-fragments

Mechanism of Si doping in plasma assisted MBE growth of β-Ga2O3

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