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The promise of GaAs 200 in small‐angle neutron scattering for higher resolution

Journal of applied crystallography, 2024-10, Vol.57 (5), p.1282-1287

2024

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Magnetic susceptibility of n-type GaAs

Semiconductor science and technology, 2012-05, Vol.27 (5), p.55018

2012

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LEC- and VGF-growth of SI GaAs single crystals—recent developments and current issues

Journal of crystal growth, 2005-02, Vol.275 (1), p.283-291

2005

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Influence of boron on the point defect equilibrium in highly n-doped gallium arsenide single crystals

Physica. B, Condensed matter, 2007-12, Vol.401, p.246-249

2007

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Photoelastic characterization of residual stress in GaAs-wafers

Materials science in semiconductor processing, 2006-02, Vol.9 (1), p.345-350

2006

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A combined carbon and oxygen segregation model for the LEC growth of SI GaAs

Journal of crystal growth, 2003, Vol.247 (1), p.69-76

2003

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Far-infrared spectroscopy of shallow acceptors in semi-insulating GaAs: evidence for defect interactions with EL2

Physica status solidi. B. Basic research, 2003-01, Vol.235 (1), p.58-62

2003

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Growth and characterization of 200 mm SI GaAs crystals grown by the VGF method

Journal of crystal growth, 2003-03, Vol.250 (1), p.57-61

2003

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GaAs wafer mapping by microwave-detected photoconductivity

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-03, Vol.80 (1), p.206-209

2001

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200 mm GaAs crystal growth by the temperature gradient controlled LEC method

Journal of crystal growth, 2001-05, Vol.225 (2-4), p.561-565

2001

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Development of a vertical gradient freeze process for low EPD GaAs substrates

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-03, Vol.80 (1), p.5-9

2001

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Far-infrared absorption due to shallow acceptors in semi-insulating GaAs in dependence on EL2 bleaching

Physica Status Solidi (b), 2003-11, Vol.240 (1), p.139-147

2003

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Boron-Silicon complex defects in GaAs: An ab initio study

Journal of applied physics, 2011-03, Vol.109 (6), p.063533-063533-7

2011

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Influence of compensation level on EL2 concentration in semi-insulating gallium arsenide

Physica status solidi. C, 2003-02 (3), p.845-849

2003

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Charge states and quantitative infrared spectroscopy of electrically active oxygen centers in gallium arsenide

Journal of applied physics, 2007-04, Vol.101 (7), p.073516-073516-6

2007

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Contact-free investigation of the EL2-defect in the surface of GaAs wafers

European physical journal. Applied physics, 2004-07, Vol.27 (1-3), p.363-366

2004

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200mm GaAs crystal growth by the temperature gradient controlled LEC method

Journal of crystal growth, 2001-05, Vol.225 (2-4), p.561-565

2001

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State of the art 6″ SI GaAs wafers made of conventionally grown LEC-crystals

Journal of crystal growth, 1999-03, Vol.198, p.336-342

1999

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Oxygen incorporation in undoped LEC-GaAs

Journal of crystal growth, 1999-03, Vol.198, p.355-360

1999

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Parameters of mesoscopic non-uniformities and their influence on the Hall mobility in undoped high-resistivity LEC GaAs

Semiconductor science and technology, 1999-10, Vol.14 (10), p.905-908

1999

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Growth and characterization of 2" and 4" low EPD InP substrate crystals by the vertical gradient freeze (VGF)-method

International Conference on Indium Phosphide and Related Materials, 2005, 2005, p.392-397

2005

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Correlation of micro-non-uniformities and electron mobility in undoped liquid-encapsulated Czochralski and vertical-gradient freeze GaAs

Materials science & engineering. B, Solid-state materials for advanced technology, 1994-12, Vol.28 (1), p.84-86

1994

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Studies of reperfusion injury in skeletal muscle: preserved cellular viability after extended periods of warm ischemia

Journal of cardiovascular surgery, 1991-09, Vol.32 (5), p.664

1991

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Optical cross-sections and distribution of Fe2+ and Fe3+ in semi-insulating liquid encapsulated Czochralski grown InP:Fe

Materials science & engineering. B, Solid-state materials for advanced technology, 1993-11, Vol.21 (2-3), p.321-324

1993

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Mesoscopic nonuniformity of wafer-annealed semi-insulating InP

Journal of electronic materials, 1996-03, Vol.25 (3), p.363-367

1996

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The promise of GaAs 200 in small‐angle neutron scattering for higher resolution

Magnetic susceptibility of n-type GaAs

LEC- and VGF-growth of SI GaAs single crystals—recent developments and current issues

Influence of boron on the point defect equilibrium in highly n-doped gallium arsenide single crystals

Photoelastic characterization of residual stress in GaAs-wafers

A combined carbon and oxygen segregation model for the LEC growth of SI GaAs

Far-infrared spectroscopy of shallow acceptors in semi-insulating GaAs: evidence for defect interactions with EL2

Growth and characterization of 200 mm SI GaAs crystals grown by the VGF method

GaAs wafer mapping by microwave-detected photoconductivity

200 mm GaAs crystal growth by the temperature gradient controlled LEC method

Development of a vertical gradient freeze process for low EPD GaAs substrates

Far-infrared absorption due to shallow acceptors in semi-insulating GaAs in dependence on EL2 bleaching

Boron-Silicon complex defects in GaAs: An ab initio study

Influence of compensation level on EL2 concentration in semi-insulating gallium arsenide

Charge states and quantitative infrared spectroscopy of electrically active oxygen centers in gallium arsenide

Contact-free investigation of the EL2-defect in the surface of GaAs wafers

200mm GaAs crystal growth by the temperature gradient controlled LEC method

State of the art 6″ SI GaAs wafers made of conventionally grown LEC-crystals

Oxygen incorporation in undoped LEC-GaAs

Parameters of mesoscopic non-uniformities and their influence on the Hall mobility in undoped high-resistivity LEC GaAs

Growth and characterization of 2" and 4" low EPD InP substrate crystals by the vertical gradient freeze (VGF)-method

Correlation of micro-non-uniformities and electron mobility in undoped liquid-encapsulated Czochralski and vertical-gradient freeze GaAs

Studies of reperfusion injury in skeletal muscle: preserved cellular viability after extended periods of warm ischemia

Optical cross-sections and distribution of Fe2+ and Fe3+ in semi-insulating liquid encapsulated Czochralski grown InP:Fe

Mesoscopic nonuniformity of wafer-annealed semi-insulating InP

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