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High-power quantum-dot-based semiconductor disk laser

Optics letters, 2009-06, Vol.34 (11), p.1672

2009

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Modelocked quantum dot vertical external cavity surface emitting laser

Applied physics. B, Lasers and optics, 2008-12, Vol.93 (4), p.733-736

2008

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Room temperature contactless electroreflectance characterization of InGaAs/InAs/GaAs quantum dot wafers

Semiconductor science and technology, 2006-10, Vol.21 (10), p.1402-1407

2006

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Arrays of Two-Dimensional Islands Formed by Submonolayer Insertions: Growth, Properties, Devices

Physica status solidi. A, Applied research, 2001-02, Vol.183 (2), p.207-233

2001

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Identification of bound exciton complexes in ZnO

Physica Status Solidi (b), 2004-03, Vol.241 (3), p.607-611

2004

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Directional Radiation from GaAs quantum dots in AlGaAs nanowires

Technical physics letters, 2021-05, Vol.47 (5), p.405-408

2021

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The role of Auger recombination in the temperature-dependent output characteristics (T=∞) of p-doped 1.3 μm quantum dot lasers

Applied physics letters, 2004-11, Vol.85 (22), p.5164-5166

2004

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Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix

Applied physics letters, 1998-02, Vol.72 (8), p.942-944

1998

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Wavelength-stabilized tilted cavity quantum dot laser

Semiconductor science and technology, 2004-10, Vol.19 (10), p.1183-1188

2004

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Exciton-phonon interactions and exciton dephasing in semiconductor quantum-well heterostructures

Physical review. B, Condensed matter, 2003-08, Vol.68 (7), Article 073310

2003

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Orange light generation from a PPKTP waveguide end pumped by a cw quantum-dot tunable laser diode

Applied physics. B, Lasers and optics, 2011-04, Vol.103 (1), p.41-43

2011

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120°C 20 Gbit/s operation of 980 nm VCSEL

Electronics letters, 2008, Vol.44 (22), p.1305-1306

2008

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Broadly tunable quantum-dot based ultra-short pulse laser system with different diffraction grating orders

Electronics letters, 2013-02, Vol.49 (5), p.364-366

2013

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Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser

Applied physics letters, 1999-08, Vol.75 (9), p.1192-1194

1999

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Ground state exciton lasing in CdSe submonolayers inserted in a ZnSe matrix

Applied physics letters, 1996-09, Vol.69 (10), p.1343-1345

1996

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Subpicosecond high-power mode locking using flared waveguide monolithic quantum-dot lasers

Applied physics letters, 2006-03, Vol.88 (13), p.133119-133119-3

2006

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Temperature-Dependent Small-Signal Analysis of High-Speed High-Temperature Stable 980-nm VCSELs

IEEE journal of selected topics in quantum electronics, 2009-05, Vol.15 (3), p.679-686

2009

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InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm

Applied physics letters, 1999-05, Vol.74 (19), p.2815-2817

1999

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Broadly tunable 1250 nm quantum dot-based semiconductor disk laser

IET optoelectronics, 2011-08, Vol.5 (4), p.165-167

2011

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Quantum dot origin of luminescence in InGaN-GaN structures

Physical review. B, Condensed matter, 2002-10, Vol.66 (15), Article 155310

2002

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A high-power 975 nm tilted cavity laser with a 0.13 nm K−1 thermal shift of the lasing wavelength

Semiconductor science and technology, 2007-09, Vol.22 (9), p.1061-1065

2007

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Small-signal cross-gain modulation and crosstalk characteristics of quantum dot semiconductor optical amplifiers at 1.3 μm

Physica status solidi. B. Basic research, 2009-04, Vol.246 (4), p.864-867

2009

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Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition

Semiconductor science and technology, 2000-07, Vol.15 (7), p.766-769

2000

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MBE-grown ultra-large aperture single-mode vertical-cavity surface-emitting laser with all-epitaxial filter section

Journal of crystal growth, 2007-04, Vol.301, p.945-950

2007

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1270 nm quantum dot based semiconductor disk lasers

22nd IEEE International Semiconductor Laser Conference, 2010, p.71-72

2010

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High-power quantum-dot-based semiconductor disk laser

Modelocked quantum dot vertical external cavity surface emitting laser

Room temperature contactless electroreflectance characterization of InGaAs/InAs/GaAs quantum dot wafers

Arrays of Two-Dimensional Islands Formed by Submonolayer Insertions: Growth, Properties, Devices

Identification of bound exciton complexes in ZnO

Directional Radiation from GaAs quantum dots in AlGaAs nanowires

The role of Auger recombination in the temperature-dependent output characteristics (T=∞) of p-doped 1.3 μm quantum dot lasers

Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix

Wavelength-stabilized tilted cavity quantum dot laser

Exciton-phonon interactions and exciton dephasing in semiconductor quantum-well heterostructures

Orange light generation from a PPKTP waveguide end pumped by a cw quantum-dot tunable laser diode

120°C 20 Gbit/s operation of 980 nm VCSEL

Broadly tunable quantum-dot based ultra-short pulse laser system with different diffraction grating orders

Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser

Ground state exciton lasing in CdSe submonolayers inserted in a ZnSe matrix

Subpicosecond high-power mode locking using flared waveguide monolithic quantum-dot lasers

Temperature-Dependent Small-Signal Analysis of High-Speed High-Temperature Stable 980-nm VCSELs

InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm

Broadly tunable 1250 nm quantum dot-based semiconductor disk laser

Quantum dot origin of luminescence in InGaN-GaN structures

A high-power 975 nm tilted cavity laser with a 0.13 nm K−1 thermal shift of the lasing wavelength

Small-signal cross-gain modulation and crosstalk characteristics of quantum dot semiconductor optical amplifiers at 1.3 μm

Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition

MBE-grown ultra-large aperture single-mode vertical-cavity surface-emitting laser with all-epitaxial filter section

1270 nm quantum dot based semiconductor disk lasers

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