UB Paderborn / Katalog / Suche / in CDI

CdTe-HgTe (111) heterojunction valence-band discontinuity: a common-anion-rule contradiction

Physical review letters, 1986-04, Vol.56 (15), p.1605-1608

1986

Volltextzugriff (PDF)

Precise Determination of the Valence-Band Edge in X-Ray Photoemission Spectra: Application to Measurement of Semiconductor Interface Potentials

Physical review letters, 1980-06, Vol.44 (24), p.1620-1623

1980

Volltextzugriff (PDF)

Prophylaxis in severe forms of von Willebrand's disease: results from the von Willebrand Disease Prophylaxis Network (VWD PN)

Haemophilia : the official journal of the World Federation of Hemophilia, 2013-01, Vol.19 (1), p.76-81

2013

Volltextzugriff (PDF)

Measurement of GaAs/InP and InAs/InP heterojunction band offsets by x-ray photoemission spectroscopy

Applied physics letters, 1989-05, Vol.54 (19), p.1878-1880

1989

Volltextzugriff (PDF)

Measurement of InP/In0.53Ga0.47As and In0.53Ga0.47As/In0.52Al0.48As heterojunction band offsets by x-ray photoemission spectroscopy

Journal of applied physics, 1991-01, Vol.69 (1), p.372-378

1991

Volltextzugriff (PDF)

Semiconductor core-level to valence-band maximum binding-energy differences: precise determination by X-ray photoelectron spectroscopy

Physical review. B, Condensed matter, 1983-01, Vol.28 (4), p.1965-1977

1983

Volltextzugriff (PDF)

Observation of the Orientation Dependence of Interface Dipole Energies in Ge-GaAs

Physical review letters, 1978-03, Vol.40 (10), p.656-659

1978

Volltextzugriff (PDF)

The international factor IX treatment network survey

Haemophilia : the official journal of the World Federation of Hemophilia, 2012-05, Vol.18 (3), p.e60-e62

2012

Volltextzugriff (PDF)

Advances in the theory of anisotropic elastic wave propagation

Reviews of geophysics (1985), 1963-01, Vol.1 (3), p.401-448

Kraut, Edgar A.

1963

Volltextzugriff (PDF)

Measurement of AlAs/InP and InP/In0.52Al0.48As heterojunction band offsets by x‐ray photoemission spectroscopy

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1990-07, Vol.8 (4), p.768-772

1990

Volltextzugriff (PDF)

Measurement of potential at semiconductor interfaces by electron spectroscopy

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1983-04, Vol.1 (2), p.320-327

1983

Volltextzugriff (PDF)

Heterojunction band discontinuity growth sequence variation at compound semiconductor‐germanium (110) interfaces: Possible role of antiphase disorder

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1985-07, Vol.3 (4), p.1295-1299

1985

Volltextzugriff (PDF)

Band discontinuities and interface Fermi‐level positions in Ge–GaAs(110) heterojunctions

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1983-07, Vol.1 (3), p.684-686

1983

Volltextzugriff (PDF)

Heterojunction band offsets and scaling

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1987-07, Vol.5 (4), p.1246-1249

Kraut, E. A.

1987

Volltextzugriff (PDF)

Heterojunction band discontinuities for GaAs grown on Ge(110): Time variation

Surface science, 1986-03, Vol.168 (1), p.498-506

1986

Volltextzugriff (PDF)

FDTD solution of Maxwell's equations for an edge slot penetrating adjacent broadwalls of a finite wall thickness waveguide

IEEE transactions on antennas and propagation, 1994-12, Vol.42 (12), p.1646-1648

1994

Volltextzugriff (PDF)

Heterojunction band off‐sets: Variation with ionization potential compared to experiment

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1984-07, Vol.2 (3), p.486-490

Kraut, Edgar A.

1984

Volltextzugriff (PDF)

Polar heterojunction interfaces: isovalent interlayers

Physical review. B, Condensed matter, 1985-05, Vol.31 (10), p.6875-6877

KRAUT, E. A

1985

Volltextzugriff (PDF)

Energies of substitution and solution in semiconductors

Physical review. B, Condensed matter, 1988-05, Vol.37 (14), p.8244-8256

1988

Volltextzugriff (PDF)

Effect of growth sequence on the band discontinuities at AlAs/GaAs (100) and (110) heterojunction interfaces

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1987-07, Vol.5 (4), p.1209-1214

1987

Volltextzugriff (PDF)

Nonlinear Materials for Acoustic-Surface-Wave Convolver

Applied physics letters, 1972-01, Vol.20 (3), p.127-129

1972

Volltextzugriff (PDF)

Polar heterojunction interfaces

Physical review. B, Condensed matter, 1978-01, Vol.18 (8), p.4402-4410

1978

Volltextzugriff (PDF)

Heats of solution and substitution in semiconductors

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1984-07, Vol.2 (3), p.409-414

1984

Volltextzugriff (PDF)

GaAs/InP and InAs/InP heterojunction band offsets measured by x‐ray photoemission spectroscopy

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1989-07, Vol.7 (4), p.815-819

1989

Volltextzugriff (PDF)

Temperature and wavelength dependence of the photoenhancement of nonlinear surface-wave convolution

Applied physics letters, 1976-01, Vol.29 (4), p.229-231

1976

Volltextzugriff (PDF)

Menü

Weitere Dienste

Einstellungen

CdTe-HgTe (111) heterojunction valence-band discontinuity: a common-anion-rule contradiction

Precise Determination of the Valence-Band Edge in X-Ray Photoemission Spectra: Application to Measurement of Semiconductor Interface Potentials

Prophylaxis in severe forms of von Willebrand's disease: results from the von Willebrand Disease Prophylaxis Network (VWD PN)

Measurement of GaAs/InP and InAs/InP heterojunction band offsets by x-ray photoemission spectroscopy

Measurement of InP/In0.53Ga0.47As and In0.53Ga0.47As/In0.52Al0.48As heterojunction band offsets by x-ray photoemission spectroscopy

Semiconductor core-level to valence-band maximum binding-energy differences: precise determination by X-ray photoelectron spectroscopy

Observation of the Orientation Dependence of Interface Dipole Energies in Ge-GaAs

The international factor IX treatment network survey

Advances in the theory of anisotropic elastic wave propagation

Measurement of AlAs/InP and InP/In0.52Al0.48As heterojunction band offsets by x‐ray photoemission spectroscopy

Measurement of potential at semiconductor interfaces by electron spectroscopy

Heterojunction band discontinuity growth sequence variation at compound semiconductor‐germanium (110) interfaces: Possible role of antiphase disorder

Band discontinuities and interface Fermi‐level positions in Ge–GaAs(110) heterojunctions

Heterojunction band offsets and scaling

Heterojunction band discontinuities for GaAs grown on Ge(110): Time variation

FDTD solution of Maxwell's equations for an edge slot penetrating adjacent broadwalls of a finite wall thickness waveguide

Heterojunction band off‐sets: Variation with ionization potential compared to experiment

Polar heterojunction interfaces: isovalent interlayers

Energies of substitution and solution in semiconductors

Effect of growth sequence on the band discontinuities at AlAs/GaAs (100) and (110) heterojunction interfaces

Nonlinear Materials for Acoustic-Surface-Wave Convolver

Polar heterojunction interfaces

Heats of solution and substitution in semiconductors

GaAs/InP and InAs/InP heterojunction band offsets measured by x‐ray photoemission spectroscopy

Temperature and wavelength dependence of the photoenhancement of nonlinear surface-wave convolution

Suchergebnisse filtern