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Kinetics of the Luminescence Response of Self-Assembled Ge(Si) Nanoislands Embedded in Two-Dimensional Photonic Crystals

Semiconductors (Woodbury, N.Y.), 2020-10, Vol.54 (10), p.1352-1359

2020

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Analysis of the optical gain due to free-to-bound electronic transitions in indium-rich InGaN layers

Journal of applied physics, 2023-12, Vol.134 (21)

2023

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Light emission from Ge(Si)/SOI self-assembled nanoislands embedded in photonic crystal slabs of various periods with and without cavities

Semiconductor science and technology, 2019-02, Vol.34 (2), p.24003

2019

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Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures

Scientific reports, 2018-06, Vol.8 (1), p.9454-8, Article 9454

2018

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Influence of thermal annealing on the electrical and luminescent properties of heavily Sb-doped Ge/Si(001) layers

Semiconductor science and technology, 2018-12, Vol.33 (12), p.124019

2018

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Electrically pumped InGaAs/GaAs quantum well microdisk lasers directly grown on Si(100) with Ge/GaAs buffer

Optics express, 2017-07, Vol.25 (14), p.16754-16760

2017

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Urbach absorption edge in epitaxial erbium-doped silicon

Journal of applied physics, 2015-02, Vol.117 (5)

2015

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Band-to-band and direct optical excitation of Er in silicon: Comparison of kinetics, temperature dependence of erbium PL

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.4601-4603

2009

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Enhancement of the Luminescence Signal from Self-Assembled Ge(Si) Nanoislands due to Interaction with the Modes of Two-Dimensional Photonic Crystals

Semiconductors (Woodbury, N.Y.), 2020-08, Vol.54 (8), p.975-981

2020

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Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge(001) and Si(001) Substrates

Semiconductors (Woodbury, N.Y.), 2019-10, Vol.53 (10), p.1318-1323

2019

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Growth and photoluminescence of self-assembled islands obtained during the deposition of Ge on a strained SiGe layer

Optical materials, 2005-02, Vol.27 (5), p.818-821

2005

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Exciton self-trapped on Si-Si dimers on the surface of silicon nanocrystal: Experimental evidence

Physica Status Solidi. B: Basic Solid State Physics, 2016-11, Vol.253 (11), p.2150-2153

2016

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Stimulated Emission in the 1.3–1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III–V Heterostructures on Silicon Substrates

Semiconductors (Woodbury, N.Y.), 2018-11, Vol.52 (11), p.1495-1499

2018

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On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates

Semiconductors (Woodbury, N.Y.), 2017-05, Vol.51 (5), p.663-666

2017

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Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates

Semiconductors (Woodbury, N.Y.), 2017-11, Vol.51 (11), p.1527-1530

2017

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On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (12), p.1547-1550

2018

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Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate

Semiconductors (Woodbury, N.Y.), 2017-11, Vol.51 (11), p.1477-1480

2017

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SiGe nanostructures with self-assembled islands for Si-based optoelectronics

Semiconductor science and technology, 2011-01, Vol.26 (1), p.014029

2011

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Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers

Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (12), p.1657-1661

2016

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Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands

Semiconductors (Woodbury, N.Y.), 2016-11, Vol.50 (11), p.1475-1478

2016

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Luminescent properties of MBE-grown Si:Er/SOI structures

Journal of luminescence, 2012-12, Vol.132 (12), p.3148-3150

2012

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Auger de-excitation of different Er centers in Si:Er layers grown with sublimation molecular beam epitaxy

Semiconductor science and technology, 2012-10, Vol.27 (10), p.105028

2012

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Transition from planar to island growth mode in SiGe structures fabricated on SiGe/Si(001) strain-relaxed buffers

Applied physics letters, 2012-10, Vol.101 (15)

2012

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The processes of erbium impurity excitation in Si/Si1−xGex:Er/Si heteroepitaxial structures

Optical materials, 2013-05, Vol.35 (7), p.1404-1409

2013

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Stimulated Emission at 1.3-μm Wavelength in Metamorphic InGaAs/InGaAsP Structure with Quantum Wells Grown on Ge/Si(001) Substrate

Technical physics letters, 2018-08, Vol.44 (8), p.735-738

2018

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Kinetics of the Luminescence Response of Self-Assembled Ge(Si) Nanoislands Embedded in Two-Dimensional Photonic Crystals

Analysis of the optical gain due to free-to-bound electronic transitions in indium-rich InGaN layers

Light emission from Ge(Si)/SOI self-assembled nanoislands embedded in photonic crystal slabs of various periods with and without cavities

Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures

Influence of thermal annealing on the electrical and luminescent properties of heavily Sb-doped Ge/Si(001) layers

Electrically pumped InGaAs/GaAs quantum well microdisk lasers directly grown on Si(100) with Ge/GaAs buffer

Urbach absorption edge in epitaxial erbium-doped silicon

Band-to-band and direct optical excitation of Er in silicon: Comparison of kinetics, temperature dependence of erbium PL

Enhancement of the Luminescence Signal from Self-Assembled Ge(Si) Nanoislands due to Interaction with the Modes of Two-Dimensional Photonic Crystals

Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge(001) and Si(001) Substrates

Growth and photoluminescence of self-assembled islands obtained during the deposition of Ge on a strained SiGe layer

Exciton self-trapped on Si-Si dimers on the surface of silicon nanocrystal: Experimental evidence

Stimulated Emission in the 1.3–1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III–V Heterostructures on Silicon Substrates

On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates

Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates

On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates

Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate

SiGe nanostructures with self-assembled islands for Si-based optoelectronics

Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers

Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands

Luminescent properties of MBE-grown Si:Er/SOI structures

Auger de-excitation of different Er centers in Si:Er layers grown with sublimation molecular beam epitaxy

Transition from planar to island growth mode in SiGe structures fabricated on SiGe/Si(001) strain-relaxed buffers

The processes of erbium impurity excitation in Si/Si1−xGex:Er/Si heteroepitaxial structures

Stimulated Emission at 1.3-μm Wavelength in Metamorphic InGaAs/InGaAsP Structure with Quantum Wells Grown on Ge/Si(001) Substrate

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