UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

The elastic strain and composition of self-assembled GeSi islands on Si(001)

Thin solid films, 2000-05, Vol.367 (1-2), p.171-175

2000

Volltextzugriff (PDF)

The exciton excitations and relaxation processes in low-dimensional semiconductor heterostructures with quantum wells

Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (12), p.1691-1695

2016

Volltextzugriff (PDF)

Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates

Semiconductors (Woodbury, N.Y.), 2016-11, Vol.50 (11), p.1435-1438

2016

Volltextzugriff (PDF)

Multifunction setup for the measurement of resonant optical responses of semiconductor structures in the visible and IR spectral ranges with subpicosecond time resolution

Technical physics, 2015-03, Vol.60 (3), p.442-446

2015

Volltextzugriff (PDF)

XIV Annual International Workshop “Nanophysics and Nanoelectronics 2010”

Semiconductors (Woodbury, N.Y.), 2010-11, Vol.44 (11), p.1393-1393

Krasil’nik, Z. F.

2010

Volltextzugriff (PDF)

Nonresonant radiative exciton transfer by near field between quantum wells

Journal of experimental and theoretical physics, 2013-11, Vol.117 (5), p.944-949

2013

Volltextzugriff (PDF)

Sublimation molecular beam epitaxy of silicon-based structures

Semiconductors (Woodbury, N.Y.), 2010-03, Vol.44 (3), p.396-400

2010

Volltextzugriff (PDF)

Si: Er/Si diode structures for observing room-temperature electroluminescence at a wavelength of 1.54 [micro]m

Semiconductors (Woodbury, N.Y.), 2010-03, Vol.44 (3), p.385

2010

Volltextzugriff (PDF)

Electrical and luminescence properties of silicon-based tunnel transit-time light-emitting diodes [p.sup.+]/[n.sup.+]/n-Si:Er

Semiconductors (Woodbury, N.Y.), 2010-11, Vol.44 (11), p.1486

2010

Volltextzugriff (PDF)

Er-Doped Electro-Optical Memory Element for 1.5- \mu m Silicon Photonics

IEEE journal of selected topics in quantum electronics, 2006-11, Vol.12 (6), p.1539-1544

2006

Volltextzugriff (PDF)

Theoretical analysis of microdisk resonators based on Si/Si1−Ge :Er light-emitting structures

Journal of luminescence, 2012-12, Vol.132 (12), p.3122-3124

2012

Volltextzugriff (PDF)

Strain-driven alloying: effect on sizes, shape and photoluminescence of GeSi/Si(001) self-assembled islands

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-02, Vol.89 (1), p.62-65

2002

Volltextzugriff (PDF)

On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates

Semiconductors (Woodbury, N.Y.), 2017-05, Vol.51 (5), p.663-666

2017

Volltextzugriff (PDF)

Theoretical analysis of microdisk resonators based on Si/Si1−xGex:Er light-emitting structures

Journal of luminescence, 2012-12, Vol.132 (12), p.3122-3124

2012

Volltextzugriff (PDF)

On a silicon-based photonic-crystal cavity for the near-IR region: Numerical simulation and formation technology

Semiconductors (Woodbury, N.Y.), 2016-08, Vol.50 (8), p.1112-1116

2016

Volltextzugriff (PDF)

Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates

Semiconductors (Woodbury, N.Y.), 2017-11, Vol.51 (11), p.1527-1530

2017

Volltextzugriff (PDF)

Conditions of growth of high-quality relaxed [Si.sub.1 - x][Ge.sub.x] layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire

Semiconductors (Woodbury, N.Y.), 2016-09, Vol.50 (9), p.1248

2016

Volltextzugriff (PDF)

Optical properties of Si/Si:Er multi-nanolayer structures grown by SMBE method

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.5132-5135

2009

Volltextzugriff (PDF)

Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate

Semiconductors (Woodbury, N.Y.), 2017-11, Vol.51 (11), p.1477-1480

2017

Volltextzugriff (PDF)

Phonons in Ge/Si quantum dot structures: influence of growth temperature

Physica. E, Low-dimensional systems & nanostructures, 2004-03, Vol.21 (2), p.464-468

2004

Volltextzugriff (PDF)

Magneto-optical study of Er +3-related center in selectively doped Si:Er

Physica. E, Low-dimensional systems & nanostructures, 2003-03, Vol.16 (3), p.544-546

2003

Volltextzugriff (PDF)

Specific features of the nonradiative relaxation of [Er.sup.3+] ions in epitaxial Si structures

Semiconductors (Woodbury, N.Y.), 2014-12, Vol.48 (12), p.1586

2014

Volltextzugriff (PDF)

Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands

Semiconductors (Woodbury, N.Y.), 2016-11, Vol.50 (11), p.1475-1478

2016

Volltextzugriff (PDF)

Optical properties of strained Si1xGex and Si1xyGexCy heterostructures

Uspehi fiziceskih nauk, 2000, Vol.170 (3), p.338

2000

Volltextzugriff (PDF)

Luminescent properties of MBE-grown Si:Er/SOI structures

Journal of luminescence, 2012-12, Vol.132 (12), p.3148-3150

2012

Volltextzugriff (PDF)

1 – 25 von 93

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(82)
Mit Volltextzugriff
(87)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(64)
Physical Sciences
(62)
Physics
(56)
Physics, Condensed Matter
(45)
Materials Science
(38)
Technology
(25)
Photoluminescence
(24)
Physics And Astronomy
(24)
Silicon
(23)
Magnetic Materials
(22)
Magnetism
(22)
Materials Science, Multidisciplinary
(22)
Epitaxy
(14)
Electroluminescence
(12)
Erbium
(11)
Physics, Applied
(11)
Luminescence
(9)
Optics
(9)
Rare Earth Metals
(9)
Quantum Wells
(8)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

The elastic strain and composition of self-assembled GeSi islands on Si(001)

The exciton excitations and relaxation processes in low-dimensional semiconductor heterostructures with quantum wells

Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates

Multifunction setup for the measurement of resonant optical responses of semiconductor structures in the visible and IR spectral ranges with subpicosecond time resolution

XIV Annual International Workshop “Nanophysics and Nanoelectronics 2010”

Nonresonant radiative exciton transfer by near field between quantum wells

Sublimation molecular beam epitaxy of silicon-based structures

Si: Er/Si diode structures for observing room-temperature electroluminescence at a wavelength of 1.54 [micro]m

Electrical and luminescence properties of silicon-based tunnel transit-time light-emitting diodes [p.sup.+]/[n.sup.+]/n-Si:Er

Er-Doped Electro-Optical Memory Element for 1.5- \mu m Silicon Photonics

Theoretical analysis of microdisk resonators based on Si/Si1−Ge :Er light-emitting structures

Strain-driven alloying: effect on sizes, shape and photoluminescence of GeSi/Si(001) self-assembled islands

On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates

Theoretical analysis of microdisk resonators based on Si/Si1−xGex:Er light-emitting structures

On a silicon-based photonic-crystal cavity for the near-IR region: Numerical simulation and formation technology

Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates

Conditions of growth of high-quality relaxed [Si.sub.1 - x][Ge.sub.x] layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire

Optical properties of Si/Si:Er multi-nanolayer structures grown by SMBE method

Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate

Phonons in Ge/Si quantum dot structures: influence of growth temperature

Magneto-optical study of Er +3-related center in selectively doped Si:Er

Specific features of the nonradiative relaxation of [Er.sup.3+] ions in epitaxial Si structures

Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands

Optical properties of strained Si1xGex and Si1xyGexCy heterostructures

Luminescent properties of MBE-grown Si:Er/SOI structures

Suchergebnisse filtern