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20 Gb/s 85 ^C Error-Free Operation of VCSELs Based on Submonolayer Deposition of Quantum Dots

IEEE journal of selected topics in quantum electronics, 2007-09, Vol.13 (5), p.1302-1308

2007

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Temperature-Dependent Small-Signal Analysis of High-Speed High-Temperature Stable 980-nm VCSELs

IEEE journal of selected topics in quantum electronics, 2009-05, Vol.15 (3), p.679-686

2009

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InGaAs-GaAs Quantum-Dot Mode-Locked Laser Diodes: Optimization of the Laser Geometry for Subpicosecond Pulse Generation

IEEE photonics technology letters, 2009-03, Vol.21 (5), p.307-309

2009

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Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

IEEE journal of quantum electronics, 2006-09, Vol.42 (9), p.851-858

2006

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Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation

IEEE journal of quantum electronics, 2001-05, Vol.37 (5), p.676-683

2001

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High bit rate and elevated temperature data transmission using InGaAs quantum-dot lasers

IEEE photonics technology letters, 2004-05, Vol.16 (5), p.1415-1417

2004

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Single-Lobe Single-Wavelength Lasing in Ultrabroad-Area Vertical-Cavity Surface-Emitting Lasers Based on the Integrated Filter Concept

IEEE journal of quantum electronics, 2008-08, Vol.44 (8), p.724-731

2008

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Device characteristics of long-wavelength lasers based on self-organized quantum dots

Semiconductors (Woodbury, N.Y.), 2012-10, Vol.46 (10), p.1225-1250

2012

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Distortion-free optical amplification of 20–80 GHz modelocked laser pulses at 1.3 [micro sign]m using quantum dots

Electronics letters, 2006, Vol.42 (12), p.697

2006

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Near-field magneto-photoluminescence of quantum-dot-like composition fluctuations in GaAsN and InGaAsN alloys

Physica. E, Low-dimensional systems & nanostructures, 2004-03, Vol.21 (2), p.385-389

2004

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Low-threshold injection lasers based on vertically coupled quantum dots

Journal of crystal growth, 1997-05, Vol.175, p.689-695

1997

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120°C 20 Gbit/s operation of 980 nm VCSEL

Electronics letters, 2008, Vol.44 (22), p.1305-1306

2008

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Quantum dot lasers: breakthrough in optoelectronics

Thin solid films, 2000-05, Vol.367 (1-2), p.235-249

2000

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InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain

Journal of crystal growth, 2003-04, Vol.251 (1), p.729-736

2003

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High performance quantum dot lasers on GaAs substrates operating in 1.5 [micro sign]m range

Electronics letters, 2003, Vol.39 (15), p.1126

2003

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Stable mode-locked operation up to 80 °C from an InGaAs quantum-dot laser

IEEE photonics technology letters, 2006-07, Vol.18 (14), p.1500

2006

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InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 [micro sign]m

Electronics letters, 2000, Vol.36 (16), p.1384

2000

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High-Power O-band QD Booster Amplifier for Uncooled Operation

2024 Optical Fiber Communications Conference and Exhibition (OFC), 2024, p.1-3

2024

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Self-biased saturable absorber mirror demonstrating very low saturation fluence

Electronics letters, 2010, Vol.46 (1), p.74-75

2010

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Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate

IEEE photonics technology letters, 1999-11, Vol.11 (11), p.1345-1347

1999

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High-power 1.3 μ m InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system

Journal of crystal growth, 2005-05, Vol.278 (1), p.335-341

2005

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1.3 [micro sign]m GaAs-based laser using quantum dots obtained by activated spinodal decomposition

Electronics letters, 1999, Vol.35 (11), p.898

1999

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Single transverse mode operation of long wavelength (~1.3 [micro sign]m) InAs GaAs quantum dot laser

Electronics letters, 1999, Vol.35 (23), p.2038

1999

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Effect of matrix on InAs self-organized quantum dots on InP substrate

Applied physics letters, 1998-01, Vol.72 (3), p.362-364

1998

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Low threshold quantum dot injection laser emitting at 1.9 [micro sign]m

Electronics letters, 1998, Vol.34 (7), p.670

1998

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20 Gb/s 85 ^C Error-Free Operation of VCSELs Based on Submonolayer Deposition of Quantum Dots

Temperature-Dependent Small-Signal Analysis of High-Speed High-Temperature Stable 980-nm VCSELs

InGaAs-GaAs Quantum-Dot Mode-Locked Laser Diodes: Optimization of the Laser Geometry for Subpicosecond Pulse Generation

Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation

High bit rate and elevated temperature data transmission using InGaAs quantum-dot lasers

Single-Lobe Single-Wavelength Lasing in Ultrabroad-Area Vertical-Cavity Surface-Emitting Lasers Based on the Integrated Filter Concept

Device characteristics of long-wavelength lasers based on self-organized quantum dots

Distortion-free optical amplification of 20–80 GHz modelocked laser pulses at 1.3 [micro sign]m using quantum dots

Near-field magneto-photoluminescence of quantum-dot-like composition fluctuations in GaAsN and InGaAsN alloys

Low-threshold injection lasers based on vertically coupled quantum dots

120°C 20 Gbit/s operation of 980 nm VCSEL

Quantum dot lasers: breakthrough in optoelectronics

InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain

High performance quantum dot lasers on GaAs substrates operating in 1.5 [micro sign]m range

Stable mode-locked operation up to 80 °C from an InGaAs quantum-dot laser

InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 [micro sign]m

High-Power O-band QD Booster Amplifier for Uncooled Operation

Self-biased saturable absorber mirror demonstrating very low saturation fluence

Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate

High-power 1.3 μ m InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system

1.3 [micro sign]m GaAs-based laser using quantum dots obtained by activated spinodal decomposition

Single transverse mode operation of long wavelength (~1.3 [micro sign]m) InAs GaAs quantum dot laser

Effect of matrix on InAs self-organized quantum dots on InP substrate

Low threshold quantum dot injection laser emitting at 1.9 [micro sign]m

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