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In situ monitoring of growth rate parameters in hot-wire assisted gas source-molecular beam epitaxy using a quartz microbalance

Applied surface science, 1997-07, Vol.115 (3), p.299-306

1997

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Hydrogen-induced semimetal-semiconductor transition of two-dimensional ErSi2 detected by electron energy loss spectroscopy

Europhysics letters, 1996-07, Vol.35 (3), p.215-220

1996

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Non-equivalence of the adatoms in the das model of the Si(111) 7x7 surface, an extended Hückel model calculation

Solid state communications, 1993-03, Vol.85 (11), p.935-940

1993

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Growth of epitaxial SiGe nanostructures at low temperature on Si(100) using hot-wire assisted gas source molecular beam epitaxy

Thin solid films, 1997-02, Vol.294 (1), p.84-87

1997

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Growth of a Ge/Si/Ge (100) heterostructure by very low pressure chemical vapour deposition using Si2H6 and GeH4 gases: photoemission and low energy electron diffraction studies

Materials science & engineering. B, Solid-state materials for advanced technology, 1994-12, Vol.28 (1-3), p.14-17

1994

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Condensation of disilane or germane on a metallic surface: a photoemission study

Surface science, 1992-05, Vol.269-270, p.415-419

1992

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Oxidation of TaSi2 thin films on polycrystalline tantalum

Applied surface science, 1992, Vol.62 (3), p.167-173

1992

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Comparative photoemission study of low pressure hydrogen, silane and disilane adsorption on amorphized silicon

Journal of non-crystalline solids, 1991, Vol.135 (2), p.243-247

1991

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Existence and thermal stability of mono and dihydride phases on Si(1 1 1) and Ge(1 1 1) surfaces: A photoemission study

Physica. B, Condensed matter, 1991-04, Vol.170 (1-4), p.492-496

1991

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Using decomposed disilane as a gas source for Si epitaxial growth on Ge (111) : photoemission studies

Applied physics letters, 1990-10, Vol.57 (17), p.1760-1762

1990

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Interfacial reaction between disilane and a Ge(111)c(2 × 8) surface

Surface science, 1991-07, Vol.251-252, p.794-798

1991

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Interfacial reaction between monosilane and a polycrystalline tantalum substrate

Applied surface science, 1989-09, Vol.38 (1), p.133-138

1989

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Hydrogenation of amorphized silicon by low energy H + ion bombardment studied by UPS

Solid state communications, 1989-10, Vol.72 (2), p.219-222

1989

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Reversible process of hydrogen adsorption on Si(111)

Surface science, 1987-10, Vol.189, p.472-478

1987

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Room temperature disilane adsorption on Si(111) and Ge(111) studied by UPS: a comparative study

Vacuum, 1990, Vol.41 (4), p.892-894

1990

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Hydrogenation of amorphized silicon studied by UPS

Journal of non-crystalline solids, 1987-12, Vol.97, p.1411-1414

1987

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Nitrogen bonding changes versus substrate temperature evidenced by X.P.S. in SiNxHy alloys prepared with NH3

Journal of non-crystalline solids, 1985-12, Vol.77-78, p.945-948

1985

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Effect of annealing on a Ge thin film on a Si(111)7 x 7 surface: A study using ARUPS, XPD, and LEED

Physical review. B, Condensed matter, 1994-08, Vol.50 (7), p.4424-4429

1994

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Comparative photoemission study of low-pressure hydrogen, silane, and disilane adsorption on Si(111)7 x 7

Physical review. B, Condensed matter, 1990-02, Vol.41 (6), p.3878-3881

1990

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EPR study on amorphous germanium oxygen, deposition angle, annealing, and substrate temperature effects

physica status solidi (b), 1976-11, Vol.78 (1), p.149-158

1976

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Magnetic susceptibility of pure boron

physica status solidi (b), 1973-11, Vol.60 (1), p.117-124

1973

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Measurements of magnetic susceptibility on amorphous boron

physica status solidi (b), 1975-06, Vol.69 (2), p.323-327

1975

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EPR investigation of paramagnetic centres in β-rhombohedral boron

Physica Status Solidi B. Basic Solid State Physics, 1973-10, Vol.59 (2), p.395-402

1973

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Paramagnetic centres in amorphous boron

physica status solidi (b), 1975-03, Vol.68 (1), p.K43-K45

1975

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ESR Investigation of Localized States in Amorphous Boron

physica status solidi (b), 1975-08, Vol.70 (2), p.595-599

1975

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In situ monitoring of growth rate parameters in hot-wire assisted gas source-molecular beam epitaxy using a quartz microbalance

Hydrogen-induced semimetal-semiconductor transition of two-dimensional ErSi2 detected by electron energy loss spectroscopy

Non-equivalence of the adatoms in the das model of the Si(111) 7x7 surface, an extended Hückel model calculation

Growth of epitaxial SiGe nanostructures at low temperature on Si(100) using hot-wire assisted gas source molecular beam epitaxy

Growth of a Ge/Si/Ge (100) heterostructure by very low pressure chemical vapour deposition using Si2H6 and GeH4 gases: photoemission and low energy electron diffraction studies

Condensation of disilane or germane on a metallic surface: a photoemission study

Oxidation of TaSi2 thin films on polycrystalline tantalum

Comparative photoemission study of low pressure hydrogen, silane and disilane adsorption on amorphized silicon

Existence and thermal stability of mono and dihydride phases on Si(1 1 1) and Ge(1 1 1) surfaces: A photoemission study

Using decomposed disilane as a gas source for Si epitaxial growth on Ge (111) : photoemission studies

Interfacial reaction between disilane and a Ge(111)c(2 × 8) surface

Interfacial reaction between monosilane and a polycrystalline tantalum substrate

Hydrogenation of amorphized silicon by low energy H + ion bombardment studied by UPS

Reversible process of hydrogen adsorption on Si(111)

Room temperature disilane adsorption on Si(111) and Ge(111) studied by UPS: a comparative study

Hydrogenation of amorphized silicon studied by UPS

Nitrogen bonding changes versus substrate temperature evidenced by X.P.S. in SiNxHy alloys prepared with NH3

Effect of annealing on a Ge thin film on a Si(111)7 x 7 surface: A study using ARUPS, XPD, and LEED

Comparative photoemission study of low-pressure hydrogen, silane, and disilane adsorption on Si(111)7 x 7

EPR study on amorphous germanium oxygen, deposition angle, annealing, and substrate temperature effects

Magnetic susceptibility of pure boron

Measurements of magnetic susceptibility on amorphous boron

EPR investigation of paramagnetic centres in β-rhombohedral boron

Paramagnetic centres in amorphous boron

ESR Investigation of Localized States in Amorphous Boron

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