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High resolution electron energy loss spectroscopy study of the Si(001) 3 × 1 hydrogenated surface

Surface science, 1996-05, Vol.352, p.401-406

1996

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Non-equivalence of the adatoms in the das model of the Si(111) 7x7 surface, an extended Hückel model calculation

Solid state communications, 1993-03, Vol.85 (11), p.935-940

1993

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Comparative photoemission study of low pressure hydrogen, silane and disilane adsorption on amorphized silicon

Journal of non-crystalline solids, 1991, Vol.135 (2), p.243-247

1991

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Photoemission study of low pressure silane adsorption on Si(111)7 × 7

Surface science, 1989-04, Vol.211, p.986-990

1989

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In situ monitoring of growth rate parameters in hot-wire assisted gas source-molecular beam epitaxy using a quartz microbalance

Applied surface science, 1997-07, Vol.115 (3), p.299-306

1997

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Growth of epitaxial SiGe nanostructures at low temperature on Si(100) using hot-wire assisted gas source molecular beam epitaxy

Thin solid films, 1997-02, Vol.294 (1), p.84-87

1997

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Chemisorption of atomic hydrogen on the Si(111)7 × 7 reconstructed surface at low coverage

Surface science, 1995-11, Vol.342 (1-3), p.206-214

1995

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Interaction of GeH 4 with the Ge(100)2 × 1 surface

Surface science, 1995-07, Vol.331-333, p.409-413

1995

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First stages of Ge adsorption on the Si(111)7 × 7 surface: experimental and theoretical studies

Surface science, 1994-04, Vol.307, p.274-279

1994

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Interaction of GeH4 with the Ge(100)2 × 1 surface

Surface science, 1995-07, Vol.331-333, p.409-413

1995

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Growth of a Ge/Si/Ge (100) heterostructure by very low pressure chemical vapour deposition using Si2H6 and GeH4 gases: photoemission and low energy electron diffraction studies

Materials science & engineering. B, Solid-state materials for advanced technology, 1994-12, Vol.28 (1-3), p.14-17

1994

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Thermal and catalytic decomposition of Si 2H 6 on a Ge(100)2 × 1 surface: Photoemission and LEED studies

Surface science, 1994, Vol.307, p.253-257

1994

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Growth of a Ge/Si/Ge (100) heterostructure by very low pressure chemical vapour deposition using Si 2H 6 and GeH 4 gases—photoemission and low energy electron diffraction studies

Materials science & engineering. B, Solid-state materials for advanced technology, 1994, Vol.28 (1), p.14-17

1994

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Thermal and catalytic decomposition of Si2H6 on a Ge(100)2×1 surface : photoemission and LEED studies

Surface science, 1994-04, Vol.307-309, p.253-257

1994

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Condensation of disilane or germane on a metallic surface: a photoemission study

Surface science, 1992-05, Vol.269-270, p.415-419

1992

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oxidation of TaSi 2 thin films on polycrystalline tantalum

Applied surface science, 1992, Vol.62 (3), p.167-173

1992

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Oxidation of TaSi2 thin films on polycrystalline tantalum

Applied surface science, 1992, Vol.62 (3), p.167-173

1992

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Existence and thermal stability of mono and dihydride phases on Si(1 1 1) and Ge(1 1 1) surfaces: A photoemission study

Physica. B, Condensed matter, 1991-04, Vol.170 (1-4), p.492-496

1991

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Monohydride phase on Ge(111) and amorphous germanium surfaces: a photoemission study

Surface science, 1990-11, Vol.237 (1-3), p.135-140

1990

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Photoemission study of low pressure hydrogen and disilane adsorption on Si(111) 7 × 7 and Ge(111)

Thin solid films, 1990, Vol.184 (1), p.147-152

1990

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Interfacial reaction between disilane and a Ge(111)c(2 × 8) surface

Surface science, 1991-07, Vol.251-252, p.794-798

1991

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Existence and thermal stability of mono and dihydride phases on Si(1 1 1) and Ge(1 1 1) surfaces

Physica. B, Condensed matter, 1991-04, Vol.170 (1-4), p.492-496

1991

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Interfacial reaction between monosilane and a polycrystalline tantalum substrate

Applied surface science, 1989-09, Vol.38 (1), p.133-138

1989

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Hydrogenation of amorphized silicon by low energy H + ion bombardment studied by UPS

Solid state communications, 1989-10, Vol.72 (2), p.219-222

1989

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Room temperature disilane adsorption on Si(111) and Ge(111) studied by UPS: a comparative study

Vacuum, 1990, Vol.41 (4), p.892-894

1990

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High resolution electron energy loss spectroscopy study of the Si(001) 3 × 1 hydrogenated surface

Non-equivalence of the adatoms in the das model of the Si(111) 7x7 surface, an extended Hückel model calculation

Comparative photoemission study of low pressure hydrogen, silane and disilane adsorption on amorphized silicon

Photoemission study of low pressure silane adsorption on Si(111)7 × 7

In situ monitoring of growth rate parameters in hot-wire assisted gas source-molecular beam epitaxy using a quartz microbalance

Growth of epitaxial SiGe nanostructures at low temperature on Si(100) using hot-wire assisted gas source molecular beam epitaxy

Chemisorption of atomic hydrogen on the Si(111)7 × 7 reconstructed surface at low coverage

Interaction of GeH 4 with the Ge(100)2 × 1 surface

First stages of Ge adsorption on the Si(111)7 × 7 surface: experimental and theoretical studies

Interaction of GeH4 with the Ge(100)2 × 1 surface

Growth of a Ge/Si/Ge (100) heterostructure by very low pressure chemical vapour deposition using Si2H6 and GeH4 gases: photoemission and low energy electron diffraction studies

Thermal and catalytic decomposition of Si 2H 6 on a Ge(100)2 × 1 surface: Photoemission and LEED studies

Growth of a Ge/Si/Ge (100) heterostructure by very low pressure chemical vapour deposition using Si 2H 6 and GeH 4 gases—photoemission and low energy electron diffraction studies

Thermal and catalytic decomposition of Si2H6 on a Ge(100)2×1 surface : photoemission and LEED studies

Condensation of disilane or germane on a metallic surface: a photoemission study

oxidation of TaSi 2 thin films on polycrystalline tantalum

Oxidation of TaSi2 thin films on polycrystalline tantalum

Existence and thermal stability of mono and dihydride phases on Si(1 1 1) and Ge(1 1 1) surfaces: A photoemission study

Monohydride phase on Ge(111) and amorphous germanium surfaces: a photoemission study

Photoemission study of low pressure hydrogen and disilane adsorption on Si(111) 7 × 7 and Ge(111)

Interfacial reaction between disilane and a Ge(111)c(2 × 8) surface

Existence and thermal stability of mono and dihydride phases on Si(1 1 1) and Ge(1 1 1) surfaces

Interfacial reaction between monosilane and a polycrystalline tantalum substrate

Hydrogenation of amorphized silicon by low energy H + ion bombardment studied by UPS

Room temperature disilane adsorption on Si(111) and Ge(111) studied by UPS: a comparative study

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