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Density of localized electronic states in a - Se from electron time-of-flight photocurrent measurements

Journal of applied physics, 2005-02, Vol.97 (3), p.033706-033706-11

2005

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Optical and Photoluminescence Properties of Erbium-Doped Chalcogenide Glasses (GeGaS:Er)

IEEE journal of selected topics in quantum electronics, 2008-09, Vol.14 (5), p.1353-1360

2008

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Recent photoluminescence research on chalcogenide glasses for photonics applications

Journal of non-crystalline solids, 2007-05, Vol.353 (13-15), p.1364-1371

2007

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Density of states of a-Se near the valence band

Journal of non-crystalline solids, 2006-06, Vol.352 (9-20), p.1539-1542

2006

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Optical properties vacuum deposited and chlorine doped a-Se thin films : aging effects

Journal of materials science. Materials in electronics, 2007-10, Vol.18 (S1), p.429-433

2007

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Photoluminescence lifetime spectrum in erbium doped Ge–Ga–S glasses

Journal of non-crystalline solids, 2006-07, Vol.352 (23-25), p.2420-2424

2006

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On the optical absorption and photoluminescence of Er-doped Ge–S–Ga glasses

Journal of non-crystalline solids, 2007-05, Vol.353 (13-15), p.1330-1332

2007

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Quadrature frequency resolved spectroscopy (QFRS) of radiative transitions of Er3+ and Nd3+ ions in chalcogenide glasses (ChGs)

Journal of physics. Conference series, 2010-11, Vol.253 (1), p.012010

2010

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Rare-earth doped chalcogenide thin films fabricated by pulsed laser deposition

Applied surface science, 2005-07, Vol.248 (1), p.376-380

2005

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Photoluminescence in Er-doped Ge–Ga–Se glasses

Journal of luminescence, 2005-04, Vol.112 (1), p.92-96

2005

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Optical and photoluminescence properties of Er-doped (GeSe2)1-x(Ga2Se3)x bulk glasses

Journal of materials science. Materials in electronics, 2007-10, Vol.18 (S1), p.231-234

2007

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Density of states in the mobility gap of stabilized a-Se from electron time-of-flight photocurrent analysis

Journal of non-crystalline solids, 2004-06, Vol.338 (Complete), p.569-573

2004

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Photoluminescence measurements of Er-doped chalcogenide glasses

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2004-05, Vol.22 (3), p.921-924

2004

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Dependence of charge-carrier ranges in stabilized a-Se on preparation conditions and alloying

Journal of materials science. Materials in electronics, 2003-10, Vol.14 (10-12), p.841-842

2003

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Slow luminescence from Er3+ centers in Er-Doped GeGaSe chalcogenide glasses observed by wideband quadrature frequency-resolved spectroscopy

Journal of materials science. Materials in electronics, 2007-10, Vol.18 (S1), p.97-101

2007

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The influence of deposition conditions and alloying on the electronic properties of amorphous selenium

Semiconductors (Woodbury, N.Y.), 2003-07, Vol.37 (7), p.789-794

2003

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Improvement of 1.54 μm luminescence in erbium-doped a-SiOx:H alloys

Journal of non-crystalline solids, 2002-04, Vol.299-302, p.699-703

2002

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Fabrication of a-Si:H/nc-Si multilayer films using layer by layer technique and their properties

Journal of non-crystalline solids, 2002-04, Vol.299, p.1070-1074

2002

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Erbium incorporation in plasma-deposited amorphous silicon

Journal of non-crystalline solids, 2000-05, Vol.266, p.614-618

2000

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The Relation between Recombination at Interface States and the Anomalously Small Exponent of the Current–Illuminance Characteristic in Microcrystalline Silicon

Semiconductors (Woodbury, N.Y.), 2001-06, Vol.35 (6), p.615

Koughia, K. V.

2001

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Electronic properties of Erbium doped amorphous silicon

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-04, Vol.81 (1), p.71-73

2001

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Photoluminescence spectra and lifetimes of 4 hbox I 13 / 2 arrow right 4 hbox I 15 / 2 and 4 hbox I 11 / 2 arrow right 4 hbox I 15 / 2 transitions in erbium doped GeGaSe and GeGaS glasses

Journal of materials science. Materials in electronics, 2007-10, Vol.18 (1), p.153-157

2007

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Photoluminescence spectra and lifetimes of $${{}^4\hbox{I}_{{13}/2} \rightarrow {}^4\hbox{I}_{{15}/2} }$$ and $${{}^4\hbox{I}_{{11}/2} \rightarrow {}^4\hbox{I}_{{15}/2} }$$ transitions in erbium doped GeGaSe and GeGaS glasses

Journal of materials science. Materials in electronics, 2007-10, Vol.18 (S1), p.153-157

2007

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Photoluminescence spectra and lifetimes of [Equation] and [Equation] transitions in erbium doped GeGaSe and GeGaS glasses

Journal of materials science. Materials in electronics, 2007-10, Vol.18, p.153-157

2007

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The influence of deposition parameters on the structure of nanocrystalline silicon

Materials science & engineering. B, Solid-state materials for advanced technology, 2000-01, Vol.69, p.266-271

2000

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Density of localized electronic states in a - Se from electron time-of-flight photocurrent measurements

Optical and Photoluminescence Properties of Erbium-Doped Chalcogenide Glasses (GeGaS:Er)

Recent photoluminescence research on chalcogenide glasses for photonics applications

Density of states of a-Se near the valence band

Optical properties vacuum deposited and chlorine doped a-Se thin films : aging effects

Photoluminescence lifetime spectrum in erbium doped Ge–Ga–S glasses

On the optical absorption and photoluminescence of Er-doped Ge–S–Ga glasses

Quadrature frequency resolved spectroscopy (QFRS) of radiative transitions of Er3+ and Nd3+ ions in chalcogenide glasses (ChGs)

Rare-earth doped chalcogenide thin films fabricated by pulsed laser deposition

Photoluminescence in Er-doped Ge–Ga–Se glasses

Optical and photoluminescence properties of Er-doped (GeSe2)1-x(Ga2Se3)x bulk glasses

Density of states in the mobility gap of stabilized a-Se from electron time-of-flight photocurrent analysis

Photoluminescence measurements of Er-doped chalcogenide glasses

Dependence of charge-carrier ranges in stabilized a-Se on preparation conditions and alloying

Slow luminescence from Er3+ centers in Er-Doped GeGaSe chalcogenide glasses observed by wideband quadrature frequency-resolved spectroscopy

The influence of deposition conditions and alloying on the electronic properties of amorphous selenium

Improvement of 1.54 μm luminescence in erbium-doped a-SiOx:H alloys

Fabrication of a-Si:H/nc-Si multilayer films using layer by layer technique and their properties

Erbium incorporation in plasma-deposited amorphous silicon

The Relation between Recombination at Interface States and the Anomalously Small Exponent of the Current–Illuminance Characteristic in Microcrystalline Silicon

Electronic properties of Erbium doped amorphous silicon

Photoluminescence spectra and lifetimes of 4 hbox I 13 / 2 arrow right 4 hbox I 15 / 2 and 4 hbox I 11 / 2 arrow right 4 hbox I 15 / 2 transitions in erbium doped GeGaSe and GeGaS glasses

Photoluminescence spectra and lifetimes of $${{}^4\hbox{I}_{{13}/2} \rightarrow {}^4\hbox{I}_{{15}/2} }$$ and $${{}^4\hbox{I}_{{11}/2} \rightarrow {}^4\hbox{I}_{{15}/2} }$$ transitions in erbium doped GeGaSe and GeGaS glasses

Photoluminescence spectra and lifetimes of [Equation] and [Equation] transitions in erbium doped GeGaSe and GeGaS glasses

The influence of deposition parameters on the structure of nanocrystalline silicon

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