UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 74

Sortiert nach

The 1.6-kV AlGaN/GaN HFETs

IEEE electron device letters, 2006-09, Vol.27 (9), p.716-718

2006

Link zum Volltext
IEEE_Xplore

Stable CW operation of field-plated GaN-AlGaN MOSHFETs at 19 W/mm

IEEE electron device letters, 2005-08, Vol.26 (8), p.535-537

2005

Link zum Volltext
IEEE_Xplore

Universal compact model for long- and short-channel Thin-Film Transistors

Solid-state electronics, 2008-03, Vol.52 (3), p.400-405

2008

Link zum Volltext

Verfügbarkeit prüfen

Compact Model of Current Collapse in Heterostructure Field-Effect Transistors

IEEE electron device letters, 2007-05, Vol.28 (5), p.332-335

2007

Link zum Volltext
IEEE_Xplore

Mechanism of current collapse removal in field-plated nitride HFETs

IEEE electron device letters, 2005-10, Vol.26 (10), p.704-706

2005

Link zum Volltext
IEEE_Xplore

Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors

Applied physics letters, 2001-10, Vol.79 (16), p.2651-2653

2001

Link zum Volltext

Verfügbarkeit prüfen

AlGaN/GaN/AlGaN double heterostructure for high-power III-N field-effect transistors

Applied physics letters, 2003-06, Vol.82 (25), p.4593-4595

2003

Link zum Volltext

Verfügbarkeit prüfen

Insulating gate III-N heterostructure field-effect transistors for high-power microwave and switching applications

IEEE transactions on microwave theory and techniques, 2003-02, Vol.51 (2), p.624-633

2003

Link zum Volltext
IEEE_Xplore

Submicron gate Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors

IEEE electron device letters, 2003-09, Vol.24 (9), p.541-543

2003

Link zum Volltext
IEEE_Xplore

Mechanism of radio-frequency current collapse in GaN–AlGaN field-effect transistors

Applied physics letters, 2001-04, Vol.78 (15), p.2169-2171

2001

Link zum Volltext

Verfügbarkeit prüfen

Low-loss high power RF switching using multifinger AlGaN/GaN MOSHFETs

IEEE electron device letters, 2002-08, Vol.23 (8), p.449-451

2002

Link zum Volltext
IEEE_Xplore

Selectively Doped High-Power AlGaN/InGaN/GaN MOS-DHFET

IEEE electron device letters, 2007-03, Vol.28 (3), p.192-194

2007

Link zum Volltext
IEEE_Xplore

Thermal management of AlGaN-GaN HFETs on sapphire using flip-chip bonding with epoxy underfill

IEEE electron device letters, 2003-06, Vol.24 (6), p.375-377

2003

Link zum Volltext
IEEE_Xplore

Power Stability of AlGaN/GaN HFETs at 20 W/mm in the Pinched-Off Operation Mode

IEEE electron device letters, 2007-01, Vol.28 (1), p.5-7

2007

Link zum Volltext
IEEE_Xplore

High-power RF switching using III-nitride metal-oxide-semiconductor heterojunction capacitors

IEEE electron device letters, 2005-02, Vol.26 (2), p.56-58

2005

Link zum Volltext
IEEE_Xplore

Digital oxide deposition of SiO2 layers for III-nitride metal-oxide-semiconductor heterostructure field-effect transistors

Applied physics letters, 2006-05, Vol.88 (18)

2006

Link zum Volltext

Verfügbarkeit prüfen

GaN/AlGaN p-channel inverted heterostructure JFET

IEEE electron device letters, 2002-08, Vol.23 (8), p.452-454

2002

Link zum Volltext
IEEE_Xplore

Cryogenic RF switch using III-nitride MOSHFETs

Electronics letters, 2009, Vol.45 (4), p.207-208

2009

Link zum Volltext

Verfügbarkeit prüfen

Maximum current in nitride-based heterostructure field-effect transistors

Applied physics letters, 2002-04, Vol.80 (17), p.3216-3218

2002

Link zum Volltext

Verfügbarkeit prüfen

Real-space electron transfer in III-nitride metal-oxide-semiconductor-heterojunction structures

Applied physics letters, 2005-07, Vol.87 (4), p.043505-043505-3

2005

Link zum Volltext

Verfügbarkeit prüfen

Stable 20 W∕mm AlGaN-GaN MOSHFET

Electronics letters, 2005-06, Vol.41 (13), p.774

2005

Link zum Volltext

Verfügbarkeit prüfen

Dynamic current-voltage characteristics of III-N HFETs

IEEE electron device letters, 2003-11, Vol.24 (11), p.680-682

2003

Link zum Volltext
IEEE_Xplore

Current collapse and reliability of III-N heterostructure field effect transistors

Physica status solidi. PSS-RRL. Rapid research letters, 2007-05, Vol.1 (3), p.116-118

2007

Link zum Volltext

Verfügbarkeit prüfen

RF Transmission Line Method for Wide-Bandgap Heterostructures

IEEE electron device letters, 2009-05, Vol.30 (5), p.433-435

2009

Link zum Volltext
IEEE_Xplore

Monolithically integrated high-power broad-band RF switch based on III-N insulated gate transistors

IEEE microwave and wireless components letters, 2004-12, Vol.14 (12), p.560-562

2004

Link zum Volltext
IEEE_Xplore

1 – 25 von 74

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(59)
Mit Volltextzugriff
(72)

Publikationsform

Sprache

Englisch
(73)
Japanisch
(21)

Erscheinungsjahr

n.n

Thema

Science & Technology
(40)
Technology
(29)
Engineering
(27)
Engineering, Electrical & Electronic
(27)
Hemts
(26)
Gallium Nitride
(23)
Modfets
(22)
Aluminum Gallium Nitride
(21)
Applied Sciences
(20)
Electronics
(20)
Exact Sciences And Technology
(20)
Physical Sciences
(19)
Physics
(19)
Physics, Applied
(18)
Semiconductor Electronics. Microelectronics. Optoelectronics. Solid State Devices
(18)
Transistors
(18)
Devices
(16)
Radio Frequency
(16)
Gan
(14)
Gallium Nitrides
(13)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

The 1.6-kV AlGaN/GaN HFETs

Stable CW operation of field-plated GaN-AlGaN MOSHFETs at 19 W/mm

Universal compact model for long- and short-channel Thin-Film Transistors

Compact Model of Current Collapse in Heterostructure Field-Effect Transistors

Mechanism of current collapse removal in field-plated nitride HFETs

Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors

AlGaN/GaN/AlGaN double heterostructure for high-power III-N field-effect transistors

Insulating gate III-N heterostructure field-effect transistors for high-power microwave and switching applications

Submicron gate Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors

Mechanism of radio-frequency current collapse in GaN–AlGaN field-effect transistors

Low-loss high power RF switching using multifinger AlGaN/GaN MOSHFETs

Selectively Doped High-Power AlGaN/InGaN/GaN MOS-DHFET

Thermal management of AlGaN-GaN HFETs on sapphire using flip-chip bonding with epoxy underfill

Power Stability of AlGaN/GaN HFETs at 20 W/mm in the Pinched-Off Operation Mode

High-power RF switching using III-nitride metal-oxide-semiconductor heterojunction capacitors

Digital oxide deposition of SiO2 layers for III-nitride metal-oxide-semiconductor heterostructure field-effect transistors

GaN/AlGaN p-channel inverted heterostructure JFET

Cryogenic RF switch using III-nitride MOSHFETs

Maximum current in nitride-based heterostructure field-effect transistors

Real-space electron transfer in III-nitride metal-oxide-semiconductor-heterojunction structures

Stable 20 W∕mm AlGaN-GaN MOSHFET

Dynamic current-voltage characteristics of III-N HFETs

Current collapse and reliability of III-N heterostructure field effect transistors

RF Transmission Line Method for Wide-Bandgap Heterostructures

Monolithically integrated high-power broad-band RF switch based on III-N insulated gate transistors

Suchergebnisse filtern