UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 377

Sortiert nach

Analysis of graphene nanoribbons as a channel material for field-effect transistors

Applied physics letters, 2006-04, Vol.88 (14)

2006

Link zum Volltext

Verfügbarkeit prüfen

Bandgap engineering of group IV materials for complementary n and p tunneling field effect transistors

Applied physics letters, 2013-03, Vol.102 (11)

2013

Link zum Volltext

Verfügbarkeit prüfen

Physics of Hole Transport in Strained Silicon MOSFET Inversion Layers

IEEE transactions on electron devices, 2006-08, Vol.53 (8), p.1840-1851

2006

Link zum Volltext
IEEE_Xplore

Assessment of room-temperature phonon-limited mobility in gated silicon nanowires

Applied physics letters, 2004-06, Vol.84 (25), p.5270-5272

2004

Link zum Volltext

Verfügbarkeit prüfen

III-V field effect transistors for future ultra-low power applications

2012 Symposium on VLSI Technology (VLSIT), 2012, p.45-46

2012

Link zum Volltext
IEEE_Xplore

Does the low hole transport mass in 〈110〉 and 〈111〉 Si nanowires lead to mobility enhancements at high field and stress: A self-consistent tight-binding study

Journal of applied physics, 2012-06, Vol.111 (12)

2012

Link zum Volltext

Verfügbarkeit prüfen

Disorder and interaction in 2D: exact diagonalization study of the Anderson-Hubbard-Mott model

Physical review letters, 2001-03, Vol.86 (11), p.2388-2391

2001

Link zum Volltext

Verfügbarkeit prüfen

Process Technology Variation

IEEE transactions on electron devices, 2011-08, Vol.58 (8), p.2197-2208

2011

Link zum Volltext
IEEE_Xplore

Drive current enhancement in p-type metal–oxide–semiconductor field-effect transistors under shear uniaxial stress

Applied physics letters, 2004-12, Vol.85 (25), p.6188-6190

2004

Link zum Volltext

Verfügbarkeit prüfen

Addition spectrum, persistent current, and spin polarization in coupled quantum dot arrays: Coherence, correlation, and disorder

Physical review. B, Condensed matter, 1998-08, Vol.58 (7), p.3989-4013

1998

Link zum Volltext

Verfügbarkeit prüfen

Capacitance Compact Model for Ultrathin Low-Electron-Effective-Mass Materials

IEEE transactions on electron devices, 2011-12, Vol.58 (12), p.4204-4211

2011

Link zum Volltext
IEEE_Xplore

Thermodynamics of Phase Transitions and Bipolar Filamentary Switching in Resistive Random-Access Memory

Physical review applied, 2017-08, Vol.8 (2), Article 024028

2017

Link zum Volltext

Verfügbarkeit prüfen

Modeling the effects of applied stress and wafer orientation in silicon devices: from long channel mobility physics to short channel performance

Journal of computational electronics, 2009-06, Vol.8 (2), p.110-123

2009

Link zum Volltext

Verfügbarkeit prüfen

Effects of Surface Orientation on the Performance of Idealized III-V Thin-Body Ballistic n-MOSFETs

IEEE electron device letters, 2011-06, Vol.32 (6), p.746-748

2011

Link zum Volltext
IEEE_Xplore

Effect of band warping and wafer orientation on NMOS mobility under arbitrary applied stress

Journal of computational electronics, 2008-09, Vol.7 (3), p.95-98

2008

Link zum Volltext

Verfügbarkeit prüfen

Non-Volatile RRAM Embedded into 22FFL FinFET Technology

2019 Symposium on VLSI Technology, 2019, p.T230-T231

2019

Link zum Volltext
IEEE_Xplore

High Volume Electrical Characterization of Semiconductor Qubits

2019 IEEE International Electron Devices Meeting (IEDM), 2019, p.31.5.1-31.5.4

2019

Link zum Volltext
IEEE_Xplore

Qubit Device Integration Using Advanced Semiconductor Manufacturing Process Technology

2018 IEEE International Electron Devices Meeting (IEDM), 2018, p.6.3.1-6.3.4

2018

Link zum Volltext
IEEE_Xplore

Hole spin relaxation in quantum dots

Physical review. B, Condensed matter and materials physics, 2004-03, Vol.69 (12), Article 125330

2004

Link zum Volltext

Verfügbarkeit prüfen

Reliability studies on a 45nm low power system-on-chip (SoC) dual gate oxide high-k / metal gate (DG HK+MG) technology

2010 IEEE International Reliability Physics Symposium, 2010, p.293-298

2010

Link zum Volltext
IEEE_Xplore

State-of-the-art TCAD: 25 years ago and today

2019 IEEE International Electron Devices Meeting (IEDM), 2019, p.39.1.1-39.1.4

2019

Link zum Volltext
IEEE_Xplore

Exciton fine structure in interfacial quantum dots

Physica Status Solidi (b), 2003-08, Vol.238 (3), p.601-606

2003

Link zum Volltext

Verfügbarkeit prüfen

Understanding stress enhanced performance in Intel 90nm CMOS technology

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004, 2004, p.118-119

2004

Link zum Volltext
IEEE_Xplore

Growth of Si on the Si(111) surface

Physical review. B, Condensed matter, 1998-05, Vol.57 (20), p.13132-13148

1998

Link zum Volltext

Verfügbarkeit prüfen

Non-planar, multi-gate InGaAs quantum well field effect transistors with high-K gate dielectric and ultra-scaled gate-to-drain/gate-to-source separation for low power logic applications

2010 International Electron Devices Meeting, 2010, p.6.1.1-6.1.4

2010

Link zum Volltext
IEEE_Xplore

1 – 25 von 377

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(309)
Mit Volltextzugriff
(355)

Publikationsform

Sprache

Englisch
(368)
Japanisch
(39)
Russisch
(8)

Erscheinungsjahr

n.n

Thema

Science & Technology
(225)
Physical Sciences
(121)
Technology
(87)
Life Sciences & Biomedicine
(82)
Physics
(78)
Humans
(65)
Engineering
(53)
Physics, Applied
(47)
Materials Science
(36)
Exact Sciences And Technology
(35)
Applied Sciences
(31)
Chemistry
(31)
Engineering, Electrical & Electronic
(30)
Materials Science, Multidisciplinary
(30)
Nanowires
(29)
Female
(28)
Molecular Beam Epitaxy
(27)
Physics, Condensed Matter
(27)
Male
(26)
Silicon
(26)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(4)

Menü

Weitere Dienste

Einstellungen

Analysis of graphene nanoribbons as a channel material for field-effect transistors

Bandgap engineering of group IV materials for complementary n and p tunneling field effect transistors

Physics of Hole Transport in Strained Silicon MOSFET Inversion Layers

Assessment of room-temperature phonon-limited mobility in gated silicon nanowires

III-V field effect transistors for future ultra-low power applications

Does the low hole transport mass in 〈110〉 and 〈111〉 Si nanowires lead to mobility enhancements at high field and stress: A self-consistent tight-binding study

Disorder and interaction in 2D: exact diagonalization study of the Anderson-Hubbard-Mott model

Process Technology Variation

Drive current enhancement in p-type metal–oxide–semiconductor field-effect transistors under shear uniaxial stress

Addition spectrum, persistent current, and spin polarization in coupled quantum dot arrays: Coherence, correlation, and disorder

Capacitance Compact Model for Ultrathin Low-Electron-Effective-Mass Materials

Thermodynamics of Phase Transitions and Bipolar Filamentary Switching in Resistive Random-Access Memory

Modeling the effects of applied stress and wafer orientation in silicon devices: from long channel mobility physics to short channel performance

Effects of Surface Orientation on the Performance of Idealized III-V Thin-Body Ballistic n-MOSFETs

Effect of band warping and wafer orientation on NMOS mobility under arbitrary applied stress

Non-Volatile RRAM Embedded into 22FFL FinFET Technology

High Volume Electrical Characterization of Semiconductor Qubits

Qubit Device Integration Using Advanced Semiconductor Manufacturing Process Technology

Hole spin relaxation in quantum dots

Reliability studies on a 45nm low power system-on-chip (SoC) dual gate oxide high-k / metal gate (DG HK+MG) technology

State-of-the-art TCAD: 25 years ago and today

Exciton fine structure in interfacial quantum dots

Understanding stress enhanced performance in Intel 90nm CMOS technology

Growth of Si on the Si(111) surface

Non-planar, multi-gate InGaAs quantum well field effect transistors with high-K gate dielectric and ultra-scaled gate-to-drain/gate-to-source separation for low power logic applications

Suchergebnisse filtern