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Temperature dependence of energy gap in GaN thin film studied by thermomodulation

Applied physics letters, 1997-05, Vol.70 (18), p.2458-2460

1997

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Hydrogen passivation of acceptors in p-InP

Journal of applied physics, 1989-09, Vol.66 (5), p.1993-1996

1989

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Microscopic studies of semiconductor lasers utilizing a combination of transmission electron microscopy, electroluminescence imaging, and focused ion beam sputtering

Applied physics letters, 1993-06, Vol.62 (26), p.3408-3410

1993

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Monolithic hybrid mode-locked 1.3 μm semiconductor lasers

Applied physics letters, 1990-01, Vol.56 (2), p.111-113

1990

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Pt/Ti/p-In0.53Ga0.47As low-resistance nonalloyed ohmic contact formed by rapid thermal processing

Applied physics letters, 1989-06, Vol.54 (23), p.2306-2308

1989

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Characterization of (Al,Ga)As injection lasers using the luminescence emitted from the substrate

Journal of applied physics, 1978-12, Vol.49 (12), p.5731-5744

1978

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Pulsations and absorbing defects in (Al,Ga)As injection lasers

Journal of applied physics, 1979-07, Vol.50 (7), p.4616-4619

1979

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Optical properties of anodically grown native oxides on some Ga-V compounds from 1.5 to 6.0 eV

Journal of applied physics, 1977-08, Vol.48 (8), p.3510-3513

1977

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Pt/Ti/p-InGaAsP nonalloyed ohmic contact formed by rapid thermal processing

Journal of applied physics, 1989-06, Vol.65 (11), p.4319-4323

1989

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Wavelength-division-multiplexed optical transmission system with single-mode fibre and a dual-wavelength hybrid laser light source

Electronics letters, 1986, Vol.22 (21), p.1102-1103

1986

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Thermomodulated Reflectivity Spectra of Gan/Sapphire Epilayer

MRS proceedings, 1996, Vol.423, Article 741

1996

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High-power operation of InP/InGaAsP double-channel planar buried-heterostructure lasers with asymmetric facet coatings

Applied physics letters, 1987-12, Vol.51 (26), p.2219-2221

1987

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InGaAsP ridge waveguide laser array with nonuniform spacing

Applied physics letters, 1986-02, Vol.48 (5), p.312-314

1986

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InP/InGaAsP lasers with broad area double heterostructure lasers as back-face monitors

Journal of applied physics, 1988-10, Vol.64 (7), p.3718-3721

1988

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400 Mbit/s, 372 km coherent transmission experiment using in-line optical amplifiers

Electronics letters, 1988-01, Vol.24 (1), p.36-38

1988

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313 km transmission experiment at 1 Gbit/s using optical amplifiers and a low chirp laser

Electronics letters, 1988-01, Vol.24 (1), p.38-39

1988

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Growth and characterization of high yield, reliable, high-power, high-speed, InP/InGaAsP capped mesa buried heterostructure distributed feedback (CMBH-DFB) lasers

IEEE journal of quantum electronics, 1989-10, Vol.25 (10), p.2091-2095

1989

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Strip buried heterostructure lasers with passive distributed Bragg reflectors

IEEE journal of quantum electronics, 1979-10, Vol.15 (10), p.1091-1093

1979

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A dual-wavelength InP channeled-substrate buried-heterostructure laser light-source

Solid-state electronics, 1987, Vol.30 (1), p.39-42

1987

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Thermal Annealing of Proton‐Bombarded GaAs and ( Al , Ga ) As

Journal of the Electrochemical Society, 1984-01, Vol.131 (7), p.1703-1707

1984

Volltextzugriff (PDF)

Defect mechanisms in degradation of 1.3-μm wavelength channeled-substrate buried heterostructure lasers

Journal of applied physics, 1988-02, Vol.63 (3), p.611-623

1988

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Effect of macroscopic stress on accelerated aging of GaInAsP channeled substrate buried heterostructure lasers

Journal of applied physics, 1989-08, Vol.66 (4), p.1849-1854

1989

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High-power index-guided multiridge waveguide laser array

Applied physics letters, 1985-05, Vol.46 (9), p.803-804

1985

Volltextzugriff (PDF)

Bonding pad induced stresses in (Al,Ga)As double heterostructure lasers

Journal of applied physics, 1983-07, Vol.54 (7), p.3763-3768

1983

Volltextzugriff (PDF)

Integrated multijunction GaAs photodetector with high output voltage

Applied physics letters, 1978-10, Vol.33 (7), p.629-631

1978

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Temperature dependence of energy gap in GaN thin film studied by thermomodulation

Hydrogen passivation of acceptors in p-InP

Microscopic studies of semiconductor lasers utilizing a combination of transmission electron microscopy, electroluminescence imaging, and focused ion beam sputtering

Monolithic hybrid mode-locked 1.3 μm semiconductor lasers

Pt/Ti/p-In0.53Ga0.47As low-resistance nonalloyed ohmic contact formed by rapid thermal processing

Characterization of (Al,Ga)As injection lasers using the luminescence emitted from the substrate

Pulsations and absorbing defects in (Al,Ga)As injection lasers

Optical properties of anodically grown native oxides on some Ga-V compounds from 1.5 to 6.0 eV

Pt/Ti/p-InGaAsP nonalloyed ohmic contact formed by rapid thermal processing

Wavelength-division-multiplexed optical transmission system with single-mode fibre and a dual-wavelength hybrid laser light source

Thermomodulated Reflectivity Spectra of Gan/Sapphire Epilayer

High-power operation of InP/InGaAsP double-channel planar buried-heterostructure lasers with asymmetric facet coatings

InGaAsP ridge waveguide laser array with nonuniform spacing

InP/InGaAsP lasers with broad area double heterostructure lasers as back-face monitors

400 Mbit/s, 372 km coherent transmission experiment using in-line optical amplifiers

313 km transmission experiment at 1 Gbit/s using optical amplifiers and a low chirp laser

Growth and characterization of high yield, reliable, high-power, high-speed, InP/InGaAsP capped mesa buried heterostructure distributed feedback (CMBH-DFB) lasers

Strip buried heterostructure lasers with passive distributed Bragg reflectors

A dual-wavelength InP channeled-substrate buried-heterostructure laser light-source

Thermal Annealing of Proton‐Bombarded GaAs and ( Al , Ga ) As

Defect mechanisms in degradation of 1.3-μm wavelength channeled-substrate buried heterostructure lasers

Effect of macroscopic stress on accelerated aging of GaInAsP channeled substrate buried heterostructure lasers

High-power index-guided multiridge waveguide laser array

Bonding pad induced stresses in (Al,Ga)As double heterostructure lasers

Integrated multijunction GaAs photodetector with high output voltage

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