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The role of oxidation on porous silicon photoluminescence and its excitation

Thin solid films, 2001-01, Vol.381 (1), p.88-93

2001

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Complex nature of the red photoluminescence band and peculiarities of its excitation in porous silicon

Applied surface science, 2000-10, Vol.167 (3), p.197-204

2000

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Suboxide-related centre as the source of the intense red luminescence of porous Si

Microelectronic engineering, 2000, Vol.51, p.485-493

2000

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Effect of adsorption and desorption processes on photoluminescence excitation spectra of porous silicon

Applied surface science, 2000-10, Vol.166 (1), p.349-353

2000

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Lateral and depth inhomogeneities in Zn-based heterostructures grown on GaAs by MBE

Thin solid films, 2000-05, Vol.367 (1-2), p.184-188

2000

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Graded ZnS/ZnSxO1−x heterostructures produced by oxidative photolysis of zinc sulfide: Structure, optical properties and photocatalytic evolution of molecular hydrogen

Journal of photochemistry and photobiology. A, Chemistry., 2016-10, Vol.329, p.213-220

2016

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Large CdS single crystals with a high optical strength

Materials science & engineering. B, Solid-state materials for advanced technology, 1995-10, Vol.34 (1), p.12-17

1995

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Excitation mechanism of porous silicon luminescence: the role of sensitizers

Thin solid films, 1995-01, Vol.255 (1), p.185-187

1995

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Generation of metastable shallow donors induced by cooling in hexagonal II-VI semiconductors

Semiconductor science and technology, 1992-01, Vol.7 (1), p.92-96

1992

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OH-related emitting centers in interface layer of porous silicon

Physica. B, Condensed matter, 1999-12, Vol.273-274, p.955-958

1999

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Transformation of excitonic and DA luminescence spectra of GaP:N light-emitting structures on the introduction of dislocations

Semiconductor science and technology, 1992-03, Vol.7 (3), p.385-390

1992

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The influence of carrier trapping on defect reaction activation energy in semiconductors (pseudo-effect of recombination enhanced diffusion)

The Journal of physics and chemistry of solids, 1992-03, Vol.53 (3), p.469-474

1992

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Point defect formation in II–VI semiconductors at pulsed laser irradiation

Journal of crystal growth, 1990-04, Vol.101 (1), p.285-288

1990

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The nature of emission of porous silicon produced by chemical etching

Semiconductors (Woodbury, N.Y.), 2010, Vol.44 (1), p.79-83

2010

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Optical characterization of CdZnTe/ZnTe heterostructures modified by electron or X-ray irradiation

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-03, Vol.80 (1), p.193-196

2001

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Two ways of porous Si photoluminescence excitation

Materials science & engineering. B, Solid-state materials for advanced technology, 1998-02, Vol.51 (1), p.162-165

1998

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USXES AND OPTICAL PHENOMENA IN Si LOW-DIMENSIONAL STRUCTURES DEPENDENT ON MORPHOLOGY AND SILICON OXIDE COMPOSITION ON Si SURFACE

Surface review and letters, 2002-04, Vol.9 (2), p.1047-1052

2002

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Photoluminescence and EPR studies of porous silicon

Journal of luminescence, 1997-06, Vol.72, p.400-402

1997

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Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds

Semiconductor physics, quantum electronics, and optoelectronics, 1999-03, Vol.2 (1), p.42-46

Korsunskaya, N. E.

1999

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Laser-Induced Defect Formation in ZnxCd1−xSe Solid Solutions and Its Influence on Electrophysical Properties

Physica status solidi. A, Applied research, 1991-05, Vol.125 (1), p.127-132

1991

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Photoelectrical and optical properties of ZnxCd1-xs layers

Physica status solidi. A, Applied research, 1987-04, Vol.100 (2), p.521-525

1987

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Two sources of excitation of photoluminescence of porous silicon

Semiconductors (Woodbury, N.Y.), 1997-08, Vol.31 (8), p.773-776

1997

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Features of the long-term photo emf relaxation in a heteroepitaxial ZnSe-GaAs structure

Technical physics letters, 2000-01, Vol.26 (3), p.190-192

2000

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Emission associated with extended defects in epitaxial ZnTe/GaAs layers and multilayer structures

Semiconductors (Woodbury, N.Y.), 2000-01, Vol.34 (1), p.11-16

2000

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Photosensitivity Degradation Mechanism in CdS:Cu Single Crystals

August 16, 2022, Vol.60, Number 2, p.565-572

2022

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The role of oxidation on porous silicon photoluminescence and its excitation

Complex nature of the red photoluminescence band and peculiarities of its excitation in porous silicon

Suboxide-related centre as the source of the intense red luminescence of porous Si

Effect of adsorption and desorption processes on photoluminescence excitation spectra of porous silicon

Lateral and depth inhomogeneities in Zn-based heterostructures grown on GaAs by MBE

Graded ZnS/ZnSxO1−x heterostructures produced by oxidative photolysis of zinc sulfide: Structure, optical properties and photocatalytic evolution of molecular hydrogen

Large CdS single crystals with a high optical strength

Excitation mechanism of porous silicon luminescence: the role of sensitizers

Generation of metastable shallow donors induced by cooling in hexagonal II-VI semiconductors

OH-related emitting centers in interface layer of porous silicon

Transformation of excitonic and DA luminescence spectra of GaP:N light-emitting structures on the introduction of dislocations

The influence of carrier trapping on defect reaction activation energy in semiconductors (pseudo-effect of recombination enhanced diffusion)

Point defect formation in II–VI semiconductors at pulsed laser irradiation

The nature of emission of porous silicon produced by chemical etching

Optical characterization of CdZnTe/ZnTe heterostructures modified by electron or X-ray irradiation

Two ways of porous Si photoluminescence excitation

USXES AND OPTICAL PHENOMENA IN Si LOW-DIMENSIONAL STRUCTURES DEPENDENT ON MORPHOLOGY AND SILICON OXIDE COMPOSITION ON Si SURFACE

Photoluminescence and EPR studies of porous silicon

Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds

Laser-Induced Defect Formation in ZnxCd1−xSe Solid Solutions and Its Influence on Electrophysical Properties

Photoelectrical and optical properties of ZnxCd1-xs layers

Two sources of excitation of photoluminescence of porous silicon

Features of the long-term photo emf relaxation in a heteroepitaxial ZnSe-GaAs structure

Emission associated with extended defects in epitaxial ZnTe/GaAs layers and multilayer structures

Photosensitivity Degradation Mechanism in CdS:Cu Single Crystals

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