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Filamentary model of bipolar resistive switching in capacitor-like memristive nanostructures on the basis of yttria-stabilised zirconia

International journal of nanotechnology., 2017, Vol.14 (7/8), p.604

2017

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Stochastic resonance in a metal-oxide memristive device

Chaos, solitons and fractals, 2021-03, Vol.144, p.110723, Article 110723

2021

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Yttria-stabilized zirconia cross-point memristive devices for neuromorphic applications

Microelectronic engineering, 2019-07, Vol.215, p.110988, Article 110988

2019

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Mathematical model describing the rate of evaporation of high-temperature petroleum products used in the oil and gas industry

Journal of physics. Conference series, 2021-04, Vol.1889 (5), p.52018

2021

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Photoluminescent properties of the SiO2/Si system with ion-synthesized hexagonal silicon of the 9R-Si phase: Effect of post-implantation annealing

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2023-04, Vol.537, p.60-64

2023

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Structural disorder and distribution of impurity atoms in β-Ga2O3 under boron ion implantation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2023-04, Vol.537, p.65-70

2023

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Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors

Microelectronic engineering, 2018-02, Vol.187-188, p.134-138

2018

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Photoluminescence of silicon at 1235 nm produced by irradiation of SiO2/Si with Kr+ ions and subsequent high-temperature annealing

Surface & coatings technology, 2020-03, Vol.386, p.125496, Article 125496

2020

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Mathematical model of fire load type identification by electromagnetic radiation of the optical range using an unmanned aerial vehicle at oil and gas industry facilities

IOP conference series. Materials Science and Engineering, 2020-09, Vol.919 (5), p.52063

2020

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Formation of hexagonal phase 9R-Si in SiO2/Si system upon Kr+ ion implantation

Vestnik Moskovskogo universiteta. Serii͡a︡ III: Fizika, astronomii͡a, 2023-06 (3_2023), p.2330501-2330501–7

2023

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Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by [Si.sup.+] Ion Implantation

Semiconductors (Woodbury, N.Y.), 2018-07, Vol.52 (7), p.843

2018

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Mathematical simulation of the forecasting process of the fire hazard properties of substances

IOP conference series. Materials Science and Engineering, 2020-09, Vol.919 (5), p.52025

2020

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Simulation of synaptic coupling of neuron-like generators via a memristive device

Technical physics, 2017-08, Vol.62 (8), p.1259-1265

2017

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Resistive switching and impedance spectroscopy in SiO -based metal-oxide-metal trilayers down to helium temperatures

Vacuum, 2015-12, Vol.122, p.293-299

2015

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QuEChERS sample preparation in the simultaneous determination of diethylstilbestrol and ractopamine in food by gas-liquid chromatography

Journal of analytical chemistry (New York, N.Y.), 2015-04, Vol.70 (4), p.419-423

2015

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Resistive switching and impedance spectroscopy in SiOx-based metal-oxide-metal trilayers down to helium temperatures

Vacuum, 2015-12, Vol.122, p.293-299

2015

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Ion-beam simulation of radiation damage produced by fast neutrons in heterophase structures

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2014-05, Vol.326, p.41-44

2014

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Change of immitance during electroforming and resistive switching in the metal--insulator--metal memristive structures based on Si[O.sub.x]

Technical physics, 2016-05, p.745

2016

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Composition and luminescence of Si and SiO 2 layers co-implanted with Ga and N ions

International journal of nanotechnology., 2017, Vol.14 (7/8), p.637

2017

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Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride

Semiconductors (Woodbury, N.Y.), 2016-02, Vol.50 (2), p.271-275

2016

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Effect of ion doping on the dislocation-related photoluminescence in [Si.sup.+]-implanted silicon

Semiconductors (Woodbury, N.Y.), 2014-02, Vol.48 (2), p.199

2014

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Solid-phase fluorescence determination of gallium(III) with morin and lumogallion immobilized on cellulose matrices

Journal of analytical chemistry (New York, N.Y.), 2011-12, Vol.66 (12), p.1212-1216

2011

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Effect of ion irradiation on the structure and luminescence characteristics of porous silicon impregnated with tungsten-telluride glass doped by Er and Yb impurities

Physics of the solid state, 2014-03, Vol.56 (3), p.631-634

2014

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Influence of the ion synthesis and ion doping regimes on the effect of sensitization of erbium emission by silicon nanoclusters in silicon dioxide films

Physics of the solid state, 2013-11, Vol.55 (11), p.2361-2367

2013

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Peculiarities of the formation and properties of light-emitting structures based on ion-synthesized silicon nanocrystals in Si[O.sub.2] and [Al.sub.2][O.sub.3] matrices

Physics of the solid state, 2012-02, Vol.54 (2), p.368

2012

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Filamentary model of bipolar resistive switching in capacitor-like memristive nanostructures on the basis of yttria-stabilised zirconia

Stochastic resonance in a metal-oxide memristive device

Yttria-stabilized zirconia cross-point memristive devices for neuromorphic applications

Mathematical model describing the rate of evaporation of high-temperature petroleum products used in the oil and gas industry

Photoluminescent properties of the SiO2/Si system with ion-synthesized hexagonal silicon of the 9R-Si phase: Effect of post-implantation annealing

Structural disorder and distribution of impurity atoms in β-Ga2O3 under boron ion implantation

Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors

Photoluminescence of silicon at 1235 nm produced by irradiation of SiO2/Si with Kr+ ions and subsequent high-temperature annealing

Mathematical model of fire load type identification by electromagnetic radiation of the optical range using an unmanned aerial vehicle at oil and gas industry facilities

Formation of hexagonal phase 9R-Si in SiO2/Si system upon Kr+ ion implantation

Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by [Si.sup.+] Ion Implantation

Mathematical simulation of the forecasting process of the fire hazard properties of substances

Simulation of synaptic coupling of neuron-like generators via a memristive device

Resistive switching and impedance spectroscopy in SiO -based metal-oxide-metal trilayers down to helium temperatures

QuEChERS sample preparation in the simultaneous determination of diethylstilbestrol and ractopamine in food by gas-liquid chromatography

Resistive switching and impedance spectroscopy in SiOx-based metal-oxide-metal trilayers down to helium temperatures

Ion-beam simulation of radiation damage produced by fast neutrons in heterophase structures

Change of immitance during electroforming and resistive switching in the metal--insulator--metal memristive structures based on Si[O.sub.x]

Composition and luminescence of Si and SiO 2 layers co-implanted with Ga and N ions

Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride

Effect of ion doping on the dislocation-related photoluminescence in [Si.sup.+]-implanted silicon

Solid-phase fluorescence determination of gallium(III) with morin and lumogallion immobilized on cellulose matrices

Effect of ion irradiation on the structure and luminescence characteristics of porous silicon impregnated with tungsten-telluride glass doped by Er and Yb impurities

Influence of the ion synthesis and ion doping regimes on the effect of sensitization of erbium emission by silicon nanoclusters in silicon dioxide films

Peculiarities of the formation and properties of light-emitting structures based on ion-synthesized silicon nanocrystals in Si[O.sub.2] and [Al.sub.2][O.sub.3] matrices

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