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Quantum Confinement Effect in Amorphous In-Ga-Zn-O Heterojunction Channels for Thin-Film Transistors

Materials, 2020-04, Vol.13 (8), p.1935

2020

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Memristive characteristic of an amorphous Ga-Sn-O thin-film device

Scientific reports, 2019-02, Vol.9 (1), p.2757-2757, Article 2757

2019

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Record-High-Performance Hydrogenated In–Ga–Zn–O Flexible Schottky Diodes

ACS applied materials & interfaces, 2020-10, Vol.12 (42), p.47739-47746

2020

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Marked improvement in reliability of 150 °C processed IGZO thin-film transistors by applying hydrogenated IGZO as a channel material

Applied physics express, 2020-07, Vol.13 (7), p.76501

2020

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Influence of Deposition Temperature and Source Gas in PE-CVD for SiO2 Passivation on Performance and Reliability of In-Ga-Zn-O Thin-Film Transistors

IEEE transactions on electron devices, 2018-08, Vol.65 (8), p.3257-3263

2018

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Anomalous Increase in Field-Effect Mobility in In-Ga-Zn-O Thin-Film Transistors Caused by Dry-Etching Damage Through Etch-Stop Layer

IEEE transactions on electron devices, 2016-07, Vol.63 (7), p.2785-2789

2016

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Heterojunction channel engineering to enhance performance and reliability of amorphous In-Ga-Zn-O thin-film transistors

Japanese Journal of Applied Physics, 2019-09, Vol.58 (9), p.90604

2019

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Influence of a SiO2 passivation on electrical properties and reliability of In-W-Zn-O thin-film transistor

Japanese Journal of Applied Physics, 2018-11, Vol.58 (1)

2018

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Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen Density

Materials, 2019-10, Vol.12 (19), p.3236

2019

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Influence of Deposition Temperature and Source Gas in PE-CVD for SiO 2 Passivation on Performance and Reliability of In–Ga–Zn–O Thin-Film Transistors

IEEE transactions on electron devices, 2018-08, Vol.65 (8), p.3257-3263

2018

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Influence of Deposition Temperature and Source Gas in PE-CVD for SiO2 Passivation on Performance and Reliability of In–G–Zn–O Thin-Film Transistors

IEEE transactions on electron devices, 2018-01, Vol.65 (8), p.3257

2018

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Influence of a SiO 2 passivation on electrical properties and reliability of In–W–Zn–O thin-film transistor

Japanese Journal of Applied Physics, 2019-01, Vol.58 (1), p.18003

2019

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Low-temperature (150 °C) activation of Ar+O 2 +H 2 -sputtered In–Ga–Zn–O for thin-film transistors

Applied physics express, 2018-08, Vol.11 (8), p.81101

2018

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Anomalous Increase in Field-Effect Mobility in In-G-Zn-O Thin-Film Transistors Caused by Dry-Etching Damage Through Etch-Stop Layer

IEEE transactions on electron devices, 2016-07, Vol.63 (7), p.2785

2016

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Influence of a SiO^sub 2^ passivation on electrical properties and reliability of In–W–Zn–O thin-film transistor

Japanese Journal of Applied Physics, 2019-01, Vol.58 (1), p.018003

2019

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Low-temperature (150 °C) processed metal-semiconductor field-effect transistor with a hydrogenated In–Ga–Zn–O stacked channel

Japanese Journal of Applied Physics, 2020-04, Vol.59 (SG), p.SGGJ04

2020

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(Invited) Heterojunction Channel Engineering for in-Ga-Zn-O Thin-Film Transistors

Meeting abstracts (Electrochemical Society), 2020-11, Vol.MA2020-02 (28), p.1922-1922

2020

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(Invited) Low-Temperature Activation Method for InGaZnO x Thin-Film Transistors

Meeting abstracts (Electrochemical Society), 2018-07, Vol.MA2018-02 (36), p.1218-1218

2018

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Effect of Deposition Temperature and Source Gas Chemistry in PE-CVD SiO2 Passivation on InGaZnO TFTs

2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2018, p.1-2

2018

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Influence of Carrier Concentration at Front- and Back-Channel on Transfer Characteristics of Bottom-Gate Ιn-Ga-Zn-O Thin-Film Transistors

Meeting abstracts (Electrochemical Society), 2016-09, Vol.MA2016-02 (33), p.2139-2139

2016

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Quantum Confinement Effect in Amorphous In-Ga-Zn-O Heterojunction Channels for Thin-Film Transistors

Memristive characteristic of an amorphous Ga-Sn-O thin-film device

Record-High-Performance Hydrogenated In–Ga–Zn–O Flexible Schottky Diodes

Marked improvement in reliability of 150 °C processed IGZO thin-film transistors by applying hydrogenated IGZO as a channel material

Influence of Deposition Temperature and Source Gas in PE-CVD for SiO2 Passivation on Performance and Reliability of In-Ga-Zn-O Thin-Film Transistors

Anomalous Increase in Field-Effect Mobility in In-Ga-Zn-O Thin-Film Transistors Caused by Dry-Etching Damage Through Etch-Stop Layer

Heterojunction channel engineering to enhance performance and reliability of amorphous In-Ga-Zn-O thin-film transistors

Influence of a SiO2 passivation on electrical properties and reliability of In-W-Zn-O thin-film transistor

Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen Density

Influence of Deposition Temperature and Source Gas in PE-CVD for SiO 2 Passivation on Performance and Reliability of In–Ga–Zn–O Thin-Film Transistors

Influence of Deposition Temperature and Source Gas in PE-CVD for SiO2 Passivation on Performance and Reliability of In–G–Zn–O Thin-Film Transistors

Influence of a SiO 2 passivation on electrical properties and reliability of In–W–Zn–O thin-film transistor

Low-temperature (150 °C) activation of Ar+O 2 +H 2 -sputtered In–Ga–Zn–O for thin-film transistors

Anomalous Increase in Field-Effect Mobility in In-G-Zn-O Thin-Film Transistors Caused by Dry-Etching Damage Through Etch-Stop Layer

Influence of a SiO^sub 2^ passivation on electrical properties and reliability of In–W–Zn–O thin-film transistor

Low-temperature (150 °C) processed metal-semiconductor field-effect transistor with a hydrogenated In–Ga–Zn–O stacked channel

(Invited) Heterojunction Channel Engineering for in-Ga-Zn-O Thin-Film Transistors

(Invited) Low-Temperature Activation Method for InGaZnO x Thin-Film Transistors

Effect of Deposition Temperature and Source Gas Chemistry in PE-CVD SiO2 Passivation on InGaZnO TFTs

Influence of Carrier Concentration at Front- and Back-Channel on Transfer Characteristics of Bottom-Gate Ιn-Ga-Zn-O Thin-Film Transistors

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