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Longitudinal spatial hole burning in high-power semiconductor lasers: numerical analysis

Quantum electronics (Woodbury, N.Y.), 2020-02, Vol.50 (2), p.147-152

2020

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Role of strain in growth kinetics of AlGaN layers during plasma-assisted molecular beam epitaxy

Journal of crystal growth, 2011-05, Vol.323 (1), p.68-71

2011

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Vertical cavity lasers based on vertically coupled quantum dots

Electronics letters, 1997-06, Vol.33 (13), p.1150

1997

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Modelling subnanosecond pulse generation by gain switching of high-power semiconductor lasers

2020 International Conference Laser Optics (ICLO), 2020, p.1-1

2020

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High-power ridge-waveguide laser diodes and highly dense arrays with stable lateral far field based on them (1060nm)

2022 International Conference Laser Optics (ICLO), 2022, p.1-1

2022

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Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring

Journal of crystal growth, 2012-09, Vol.354 (1), p.188-192

2012

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Self-organization processes in MBE-grown quantum dot structures

Thin solid films, 1995-10, Vol.267 (1), p.32-36

1995

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High fill-factor kW-level tunnel-coupled diode laser bar ( \lambda=910\ \text) for 100-ns pulse sources

2022 International Conference Laser Optics (ICLO), 2022, p.1-1

2022

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High-power laser diodes with multiplied efficiency based on single transverse mode multi-junction heterostructures

2022 International Conference Laser Optics (ICLO), 2022, p.1-1

2022

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Prevention of gain saturation by multi-layer quantum dot lasers

Electronics letters, 1996-01, Vol.32 (14), p.1302-1304

1996

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Laser heterostructures with a broadened MQW waveguide for high-power and sub-ns-laser-pulse-width operation

2020 International Conference Laser Optics (ICLO), 2020, p.1-1

2020

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Plasma-assisted MBE growth and characterization of InN on sapphire

Journal of crystal growth, 2004-08, Vol.269 (1), p.1-9

2004

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Near field dynamics of a 1060 nm single-mode laser diode based on InGaAs/AlGaAs/GaAs

2020 International Conference Laser Optics (ICLO), 2020, p.1-1

2020

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Low-threshold injection lasers based on vertically coupled quantum dots

Journal of crystal growth, 1997-05, Vol.175, p.689-695

1997

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Composition, stoichiometry and growth rate control in molecular beam epitaxy of ZnSe based ternary and quaternary alloys

Journal of crystal growth, 1996-02, Vol.159 (1-4), p.16-20

1996

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InGaAs-GaAs quantum-dot lasers

IEEE journal of selected topics in quantum electronics, 1997-04, Vol.3 (2), p.196-205

1997

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Structural characterization of self-assembled quantum dot structures by X-ray diffraction techniques

Thin solid films, 1997-09, Vol.306 (2), p.198-204

1997

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Plasmon-induced enhancement of yellow-red luminescence in InGaN/Au nanocomposites

Semiconductors (Woodbury, N.Y.), 2015-02, Vol.49 (2), p.247-253, Article 247

2015

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Strain-induced formation and tuning of ordered nanostructures on crystal surfaces

Surface science, 1996-05, Vol.352, p.117-122

1996

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High-contrast gratings for multispectral laser sources based on III-V/SOI photonic integrated circuits

2024 International Conference Laser Optics (ICLO), 2024, p.139-139

2024

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Resonance energy transfer in a dense array of II–VI quantum dots

Physics of the solid state, 2016-11, Vol.58 (11), p.2256-2260

2016

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ZnMgSSe/ZnSe/CdSe quantum dot heterostructures for green laser applications

Journal of non-crystalline solids, 2010-08, Vol.356 (37), p.1928-1934

2010

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Optically pumped quantum-dot Cd(Zn)Se/ZnSe laser and microchip converter for yellow - green spectral region

Quantum electronics (Woodbury, N.Y.), 2013-01, Vol.43 (5), p.418-422

2013

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AlGaAs/GaAs diode lasers (1020–1100 nm) with an asymmetric broadened single transverse mode waveguide

Semiconductors (Woodbury, N.Y.), 2013-08, Vol.47 (8), p.1079-1083

2013

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Light-current characteristics of high-power pulsed semiconductor lasers (1060 nm) operating at increased (up to 90 °C) temperatures

Quantum electronics (Woodbury, N.Y.), 2021-02, Vol.51 (2), p.129-132

2021

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Longitudinal spatial hole burning in high-power semiconductor lasers: numerical analysis

Role of strain in growth kinetics of AlGaN layers during plasma-assisted molecular beam epitaxy

Vertical cavity lasers based on vertically coupled quantum dots

Modelling subnanosecond pulse generation by gain switching of high-power semiconductor lasers

High-power ridge-waveguide laser diodes and highly dense arrays with stable lateral far field based on them (1060nm)

Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring

Self-organization processes in MBE-grown quantum dot structures

High fill-factor kW-level tunnel-coupled diode laser bar ( \lambda=910\ \text) for 100-ns pulse sources

High-power laser diodes with multiplied efficiency based on single transverse mode multi-junction heterostructures

Prevention of gain saturation by multi-layer quantum dot lasers

Laser heterostructures with a broadened MQW waveguide for high-power and sub-ns-laser-pulse-width operation

Plasma-assisted MBE growth and characterization of InN on sapphire

Near field dynamics of a 1060 nm single-mode laser diode based on InGaAs/AlGaAs/GaAs

Low-threshold injection lasers based on vertically coupled quantum dots

Composition, stoichiometry and growth rate control in molecular beam epitaxy of ZnSe based ternary and quaternary alloys

InGaAs-GaAs quantum-dot lasers

Structural characterization of self-assembled quantum dot structures by X-ray diffraction techniques

Plasmon-induced enhancement of yellow-red luminescence in InGaN/Au nanocomposites

Strain-induced formation and tuning of ordered nanostructures on crystal surfaces

High-contrast gratings for multispectral laser sources based on III-V/SOI photonic integrated circuits

Resonance energy transfer in a dense array of II–VI quantum dots

ZnMgSSe/ZnSe/CdSe quantum dot heterostructures for green laser applications

Optically pumped quantum-dot Cd(Zn)Se/ZnSe laser and microchip converter for yellow - green spectral region

AlGaAs/GaAs diode lasers (1020–1100 nm) with an asymmetric broadened single transverse mode waveguide

Light-current characteristics of high-power pulsed semiconductor lasers (1060 nm) operating at increased (up to 90 °C) temperatures

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