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Temperature-dependent photoluminescence of InSb/InAs nanostructures with InSb thickness in the above-monolayer range

Journal of physics. D, Applied physics, 2016-07, Vol.49 (28), p.285108

2016

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Radiative versus non-radiative recombination in high-efficiency mid-IR InSb/InAs/In(Ga,Al)As/GaAs metamorphic nanoheterostructures

Journal of physics. D, Applied physics, 2018-01, Vol.51 (5), p.55106

2018

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Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring

Journal of crystal growth, 2012-09, Vol.354 (1), p.188-192

2012

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Mie resonances, infrared emission, and the band gap of InN

Physical review letters, 2004-03, Vol.92 (11), p.117407-117407, Article 117407

2004

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Electroluminescence in Heterostructures GaSb/AlSb/InAsSb Due to Tunneling Mechanism of Radiative Recombination

Semiconductors (Woodbury, N.Y.), 2020-12, Vol.54 (14), p.1820-1822

2020

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Large blue shift of electroluminescence spectrum in nanoheterostructures with a deep AlSb/InAsSb/AlSb quantum well

Journal of applied physics, 2019-12, Vol.126 (23)

2019

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Radiative Recombination and Impact Ionization in Semiconductor Nanostructures (a Review)

Semiconductors (Woodbury, N.Y.), 2020-12, Vol.54 (12), p.1527-1547

2020

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Light-current characteristics of high-power pulsed semiconductor lasers (1060 nm) operating at increased (up to 90 °C) temperatures

Quantum electronics (Woodbury, N.Y.), 2021-02, Vol.51 (2), p.129-132

2021

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High-Power Laser Diodes Based on InGaAs(P)/Al(In)GaAs(P)/GaAs Heterostructures with Low Internal Optical Loss

Bulletin of the Lebedev Physics Institute, 2023-09, Vol.50 (Suppl 4), p.S494-S512

2023

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High-Power Multimode Laser Diodes (λ = 976 nm) Based on Asymmetric Heterostructures with a Broadened Waveguide and Reduced Vertical Divergence

Bulletin of the Lebedev Physics Institute, 2023-12, Vol.50 (Suppl 9), p.S976-S983

2023

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Spontaneous ordering of arrays of coherent strained islands

Physical review letters, 1995-10, Vol.75 (16), p.2968-2971

1995

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High-Power CW InGaAs/AlGaAs (1070 nm) Lasers with a Broadened Lateral Waveguide of the Mesa-Stripe Design

Semiconductors (Woodbury, N.Y.), 2021-04, Vol.55 (4), p.455-459

2021

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Light Characteristics of Narrow-Stripe High-Power Semiconductor Lasers (1060 nm) Based on Asymmetric AlGaAs/GaAs Heterostructures with a Broad Waveguide

Semiconductors (Woodbury, N.Y.), 2020-04, Vol.54 (4), p.484-488

2020

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Output Optical Power Dynamics of Semiconductor Lasers (1070 nm) with a Few-Mode Lateral Waveguide of Mesa-Stripe Design at Ultrahigh Drive Currents

Technical physics letters, 2021-05, Vol.47 (5), p.368-371

2021

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Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphire

Applied physics letters, 2010-04, Vol.96 (14), p.141112-141112-3

2010

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Single-Mode Lasers (1050 nm) of Mesa-Stripe Design Based on an AlGaAs/GaAs Heterostructure with an Ultra-Narrow Waveguide

Semiconductors (Woodbury, N.Y.), 2020-04, Vol.54 (4), p.489-494

2020

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Role of strain in growth kinetics of AlGaN layers during plasma-assisted molecular beam epitaxy

Journal of crystal growth, 2011-05, Vol.323 (1), p.68-71

2011

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InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm

Applied physics letters, 1999-05, Vol.74 (19), p.2815-2817

1999

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Longitudinal spatial hole burning in high-power semiconductor lasers: numerical analysis

Quantum electronics (Woodbury, N.Y.), 2020-02, Vol.50 (2), p.147-152

2020

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Quantum dot lasers: breakthrough in optoelectronics

Thin solid films, 2000-05, Vol.367 (1-2), p.235-249

2000

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Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth

Physical review. B, Condensed matter, 1996-09, Vol.54 (12), p.8743-8750

1996

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High-power quasi-cw semiconductor lasers (1060 nm) with an ultra-wide emitting aperture

Quantum electronics (Woodbury, N.Y.), 2022-04, Vol.52 (4), p.340-342

2022

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Resonance energy transfer in a dense array of II–VI quantum dots

Physics of the solid state, 2016-11, Vol.58 (11), p.2256-2260

2016

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Vertical stacks of pulsed (100 ns) mesa-stripe semiconductor lasers with an ultra-wide (800 μm) aperture emitting kilowatt-level peak power at a wavelength of 1060 nm

Quantum electronics (Woodbury, N.Y.), 2022-02, Vol.52 (2), p.171-173

2022

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Plasmon-induced enhancement of yellow-red luminescence in InGaN/Au nanocomposites

Semiconductors (Woodbury, N.Y.), 2015-02, Vol.49 (2), p.247-253, Article 247

2015

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Temperature-dependent photoluminescence of InSb/InAs nanostructures with InSb thickness in the above-monolayer range

Radiative versus non-radiative recombination in high-efficiency mid-IR InSb/InAs/In(Ga,Al)As/GaAs metamorphic nanoheterostructures

Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring

Mie resonances, infrared emission, and the band gap of InN

Electroluminescence in Heterostructures GaSb/AlSb/InAsSb Due to Tunneling Mechanism of Radiative Recombination

Large blue shift of electroluminescence spectrum in nanoheterostructures with a deep AlSb/InAsSb/AlSb quantum well

Radiative Recombination and Impact Ionization in Semiconductor Nanostructures (a Review)

Light-current characteristics of high-power pulsed semiconductor lasers (1060 nm) operating at increased (up to 90 °C) temperatures

High-Power Laser Diodes Based on InGaAs(P)/Al(In)GaAs(P)/GaAs Heterostructures with Low Internal Optical Loss

High-Power Multimode Laser Diodes (λ = 976 nm) Based on Asymmetric Heterostructures with a Broadened Waveguide and Reduced Vertical Divergence

Spontaneous ordering of arrays of coherent strained islands

High-Power CW InGaAs/AlGaAs (1070 nm) Lasers with a Broadened Lateral Waveguide of the Mesa-Stripe Design

Light Characteristics of Narrow-Stripe High-Power Semiconductor Lasers (1060 nm) Based on Asymmetric AlGaAs/GaAs Heterostructures with a Broad Waveguide

Output Optical Power Dynamics of Semiconductor Lasers (1070 nm) with a Few-Mode Lateral Waveguide of Mesa-Stripe Design at Ultrahigh Drive Currents

Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphire

Single-Mode Lasers (1050 nm) of Mesa-Stripe Design Based on an AlGaAs/GaAs Heterostructure with an Ultra-Narrow Waveguide

Role of strain in growth kinetics of AlGaN layers during plasma-assisted molecular beam epitaxy

InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm

Longitudinal spatial hole burning in high-power semiconductor lasers: numerical analysis

Quantum dot lasers: breakthrough in optoelectronics

Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth

High-power quasi-cw semiconductor lasers (1060 nm) with an ultra-wide emitting aperture

Resonance energy transfer in a dense array of II–VI quantum dots

Vertical stacks of pulsed (100 ns) mesa-stripe semiconductor lasers with an ultra-wide (800 μm) aperture emitting kilowatt-level peak power at a wavelength of 1060 nm

Plasmon-induced enhancement of yellow-red luminescence in InGaN/Au nanocomposites

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