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Zn1−xTex Ovonic Threshold Switching Device Performance and its Correlation to Material Parameters

Scientific reports, 2018-08, Vol.8 (1), p.1-7, Article 11822

2018

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Simple Binary Ovonic Threshold Switching Material SiTe and Its Excellent Selector Performance for High-Density Memory Array Application

IEEE electron device letters, 2017-05, Vol.38 (5), p.568-571

2017

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IEEE_Xplore

Alignment Between Internal and External IT Governance and Its Effects on Distinctive Firm Performance: An Extended Resource-Based View

IEEE transactions on engineering management, 2017-08, Vol.64 (3), p.351-364

2017

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IEEE_Xplore

Hardware implementation of associative memory characteristics with analogue-type resistive-switching device

Nanotechnology, 2014-12, Vol.25 (49), p.495204-495204

2014

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Accelerated Retention Test Method by Controlling Ion Migration Barrier of Resistive Random Access Memory

IEEE electron device letters, 2015-03, Vol.36 (3), p.238-240

2015

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IEEE_Xplore

Tunnel barrier engineering of titanium oxide for high non-linearity of selector-less resistive random access memory

Applied physics letters, 2014-02, Vol.104 (5)

2014

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Effects of RESET Current Overshoot and Resistance State on Reliability of RRAM

IEEE electron device letters, 2014-06, Vol.35 (6), p.636-638

2014

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IEEE_Xplore

Te-based amorphous binary OTS device with excellent selector characteristics for x-point memory applications

2016 IEEE Symposium on VLSI Technology, 2016, p.1-2

2016

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Highly Reliable Resistive Switching Without an Initial Forming Operation by Defect Engineering

IEEE electron device letters, 2013-12, Vol.34 (12), p.1515-1517

2013

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IEEE_Xplore

Optimized Lightning-Rod Effect to Overcome Trade-Off Between Switching Uniformity and On/Off Ratio in ReRAM

IEEE electron device letters, 2014-02, Vol.35 (2), p.214-216

2014

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IEEE_Xplore

Government data openness and knowledge management: configurational patterns for national competitiveness

Industrial management + data systems, 2022-11, Vol.122 (12), p.2710-2736

2022

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Dual functionality of threshold and multilevel resistive switching characteristics in nanoscale HfO2-based RRAM devices for artificial neuron and synapse elements

Microelectronic engineering, 2017-10, Vol.182, p.42-45

2017

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Holistic Archetypes of IT Outsourcing Strategy: A Contingency Fit and Configurational Approach

MIS quarterly, 2019-12, Vol.43 (4), p.1201

2019

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Electrical and reliability characteristics of a scaled (∼30nm) tunnel barrier selector (W/Ta2O5/TaOx/TiO2/TiN) with excellent performance (JMAX > 107A/cm2)

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014, p.1-2

2014

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IEEE_Xplore

Zn 1-x Te x Ovonic Threshold Switching Device Performance and its Correlation to Material Parameters

Scientific reports, 2018-08, Vol.8 (1), p.11822

2018

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Provision and usage of open government data: strategic transformation paths

Industrial management + data systems, 2019-09, Vol.119 (8), p.1841-1858

2019

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Congruent patterns of outsourcing capabilities: A bilateral perspective

The journal of strategic information systems, 2019-12, Vol.28 (4), p.101580, Article 101580

2019

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Structurally Engineered Stackable and Scalable 3D Titanium-Oxide Switching Devices for High-Density Nanoscale Memory

Advanced materials (Weinheim), 2015-01, Vol.27 (1), p.59-64

2015

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Effect of multi-vendor outsourcing on organizational learning: A social relation perspective

Information & management, 2017-04, Vol.54 (3), p.396-413

2017

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Dual functionality of threshold and multilevel resistive switching characteristics in nanoscale HfO^sub 2^-based RRAM devices for artificial neuron and synapse elements

Microelectronic engineering, 2017-10, Vol.182, p.42

2017

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Dual functionality of threshold and multilevel resistive switching characteristics in nanoscale HfO 2 -based RRAM devices for artificial neuron and synapse elements

Microelectronic engineering, 2017-10, Vol.182, p.42-45

2017

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Te-based binary OTS selectors with excellent selectivity (>105), endurance (>108) and thermal stability (>450°C)

2018 IEEE Symposium on VLSI Technology, 2018, p.207-208

2018

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IEEE_Xplore

Nanoscale (∼10nm) 3D vertical ReRAM and NbO2 threshold selector with TiN electrode

2013 IEEE International Electron Devices Meeting, 2013, p.10.5.1-10.5.4

2013

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IEEE_Xplore

BEOL compatible (300°C) TiN/TiOx/Ta/TiN 3D nanoscale (∼10nm) IMT selector

2013 IEEE International Electron Devices Meeting, 2013, p.10.7.1-10.7.4

2013

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IEEE_Xplore

Improvement in reliability characteristics (retention and endurance) of RRAM by using high-pressure hydrogen annealing

2014 Silicon Nanoelectronics Workshop (SNW), 2014, p.1-2

2014

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Zn1−xTex Ovonic Threshold Switching Device Performance and its Correlation to Material Parameters

Simple Binary Ovonic Threshold Switching Material SiTe and Its Excellent Selector Performance for High-Density Memory Array Application

Alignment Between Internal and External IT Governance and Its Effects on Distinctive Firm Performance: An Extended Resource-Based View

Hardware implementation of associative memory characteristics with analogue-type resistive-switching device

Accelerated Retention Test Method by Controlling Ion Migration Barrier of Resistive Random Access Memory

Tunnel barrier engineering of titanium oxide for high non-linearity of selector-less resistive random access memory

Effects of RESET Current Overshoot and Resistance State on Reliability of RRAM

Te-based amorphous binary OTS device with excellent selector characteristics for x-point memory applications

Highly Reliable Resistive Switching Without an Initial Forming Operation by Defect Engineering

Optimized Lightning-Rod Effect to Overcome Trade-Off Between Switching Uniformity and On/Off Ratio in ReRAM

Government data openness and knowledge management: configurational patterns for national competitiveness

Dual functionality of threshold and multilevel resistive switching characteristics in nanoscale HfO2-based RRAM devices for artificial neuron and synapse elements

Holistic Archetypes of IT Outsourcing Strategy: A Contingency Fit and Configurational Approach

Electrical and reliability characteristics of a scaled (∼30nm) tunnel barrier selector (W/Ta2O5/TaOx/TiO2/TiN) with excellent performance (JMAX > 107A/cm2)

Zn 1-x Te x Ovonic Threshold Switching Device Performance and its Correlation to Material Parameters

Provision and usage of open government data: strategic transformation paths

Congruent patterns of outsourcing capabilities: A bilateral perspective

Structurally Engineered Stackable and Scalable 3D Titanium-Oxide Switching Devices for High-Density Nanoscale Memory

Effect of multi-vendor outsourcing on organizational learning: A social relation perspective

Dual functionality of threshold and multilevel resistive switching characteristics in nanoscale HfO^sub 2^-based RRAM devices for artificial neuron and synapse elements

Dual functionality of threshold and multilevel resistive switching characteristics in nanoscale HfO 2 -based RRAM devices for artificial neuron and synapse elements

Te-based binary OTS selectors with excellent selectivity (>105), endurance (>108) and thermal stability (>450°C)

Nanoscale (∼10nm) 3D vertical ReRAM and NbO2 threshold selector with TiN electrode

BEOL compatible (300°C) TiN/TiOx/Ta/TiN 3D nanoscale (∼10nm) IMT selector

Improvement in reliability characteristics (retention and endurance) of RRAM by using high-pressure hydrogen annealing

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