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Low-temperature soluble InZnO thin film transistors by microwave annealing

Journal of crystal growth, 2011-07, Vol.326 (1), p.23-27

2011

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Compositional influence on sol-gel-derived amorphous oxide semiconductor thin film transistors

Applied physics letters, 2009-09, Vol.95 (10), p.103501-103501-3

2009

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Flexible (Ba0.7Sr0.3)TiO3 thick films with mechanically stable dielectric tunability

Journal of the Korean Physical Society, 2022-10, Vol.81 (7), p.664-668

2022

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Enhanced Performance of Solution-Processed Amorphous LiYInZnO Thin-Film Transistors

ACS applied materials & interfaces, 2012-03, Vol.4 (3), p.1456-1461

2012

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Transparent conducting indium zinc tin oxide thin films with low indium content deposited by radio frequency magnetron sputtering

Thin solid films, 2014-05, Vol.559, p.44-48

2014

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High performance and high stability low temperature aqueous solution-derived Li–Zr co-doped ZnO thin film transistors

Journal of materials chemistry, 2012-01, Vol.22 (12), p.5390-5397

2012

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Electrical Properties of BiFeO3 Doped PZT Thin Films for Embedded FeRAM Devices

Journal of the Korean Physical Society, 2006, 49(III), , pp.514-517

2006

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DIELECTRIC AND ELECTROMECHANICAL PROPERTIES OF Pb(Zr,Ti)O3 THIN FILMS FOR PIEZO-MICROELECTROMECHANICAL SYSTEM DEVICES

Jpn.J.Appl.Phys ,Part 1. Vol. 42, no. 9B, pp. 5952-5955. 2003, 2003, Vol.42 (9B), p.5952-5955

2003

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Lead-free (Na₀.₅K₀.₅)(Nb₀.₉₅Ta₀.₀₅)O₃–BiFeO₃ thin films for MEMS piezoelectric vibration energy harvesting devices

Materials letters, 2012-02, Vol.69, p.24-26

2012

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Characterization of Sol-Gel Derived Antimony-doped Tin Oxide Thin Films for Transparent Conductive Oxide Application

Transactions on electrical and electronic materials, 2012-10, Vol.13 (5), p.241-244

2012

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Low-Temperature Solution-Deposited Oxide Thin-Film Transistors Based on Solution-Processed Organic--Inorganic Hybrid Dielectrics

Japanese Journal of Applied Physics, 2010-05, Vol.49 (5), p.05EB02-05EB02-4

2010

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Thermal treatment effect on the magnetoelectric properties of (Ni0.5Zn0.5)Fe2O4/Pt/Pb(Zr0.3Ti0.7)O3 heterostructured thin films

Ceramics international, 2021-03, Vol.47 (5), p.6371-6375

2021

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FERROELECTRIC Sr2(Nb, Ta)2O7 THIN FILMS PREPARED BY CHEMICAL SOLUTION DEPOSITION

Jpn.J.Appl.Phys ,Part 1. Vol. 39, no. 9B, pp. 5521-5524. 2000, 2000, Vol.39 (9B), p.5521-5524

2000

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Sol-Gel derived Ga-In-Zn-O Semiconductor Layers for Solution-Processed Thin-Film Transistors

Journal of the Korean Physical Society, 2008-07, Vol.53 (1), p.218-222

2008

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Lead-free (Na 0.5K 0.5)(Nb 0.95Ta 0.05)O 3–BiFeO 3 thin films for MEMS piezoelectric vibration energy harvesting devices

Materials letters, 2012-02, Vol.69, p.24-26

2012

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Enhanced dielectric and piezoelectric properties of low-temperature processed Pb(Zr,Ti)O 3 thick films prepared by hybrid deposition technique with chemical solution infiltration process

Materials letters, 2011-10, Vol.65 (19), p.3041-3043

2011

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Magnetoelectric Coupling in Tb0.3Dy0.7Fe1.92/PbZr0.3Ti0.7O3 Bilayer Thin Films

Jpn J Appl Phys, 2012-09, Vol.51 (9), p.093001-093001-4

2012

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Thin Film Transistors with Ink-Jet Printed Amorphous Oxide Semiconductors

Japanese Journal of Applied Physics, 2010-05, Vol.49 (5), p.05EB06-05EB06-4

2010

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Enhanced dielectric and piezoelectric properties of low-temperature processed Pb(Zr,Ti)O₃ thick films prepared by hybrid deposition technique with chemical solution infiltration process

Materials letters, 2011-10, Vol.65 (19-20), p.3041-3043

2011

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Multiferroic 0.8BiFeO 3 -0.2BaTiO 3 Thin Films Prepared by Pulsed Laser Deposition

Ferroelectrics, 2013-01, Vol.454 (1), p.47-50

2013

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Multiferroic 0.8BiFeO^sub 3^-0.2BaTiO^sub 3^ Thin Films Prepared by Pulsed Laser Deposition

Ferroelectrics, 2013-01, Vol.454 (1), p.47

2013

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Multiferroic 0.8BiFeO sub(3)-0.2BaTiO sub(3) Thin Films Prepared by Pulsed Laser Deposition

Ferroelectrics, 2013-01, Vol.454 (1), p.47-50

2013

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Magnetoelectric Coupling in Tb 0.3 Dy 0.7 Fe 1.92 /PbZr 0.3 Ti 0.7 O 3 Bilayer Thin Films

Japanese Journal of Applied Physics, 2012-09, Vol.51 (9R), p.93001

2012

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Magnetoelectric Coupling in Tb 0.3 Dy 0.7 Fe 1.92 /PbZr 0.3 Ti 0.7 O 3 Bilayer Thin Films

Japanese Journal of Applied Physics, 2012-09, Vol.51 (9R), p.93001

2012

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Magnetoelectric properties of magnetic/ferroelectric multilayer thin films

Journal of the Korean Physical Society, 2014, 65(2), , pp.229-233

2014

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Low-temperature soluble InZnO thin film transistors by microwave annealing

Compositional influence on sol-gel-derived amorphous oxide semiconductor thin film transistors

Flexible (Ba0.7Sr0.3)TiO3 thick films with mechanically stable dielectric tunability

Enhanced Performance of Solution-Processed Amorphous LiYInZnO Thin-Film Transistors

Transparent conducting indium zinc tin oxide thin films with low indium content deposited by radio frequency magnetron sputtering

High performance and high stability low temperature aqueous solution-derived Li–Zr co-doped ZnO thin film transistors

Electrical Properties of BiFeO3 Doped PZT Thin Films for Embedded FeRAM Devices

DIELECTRIC AND ELECTROMECHANICAL PROPERTIES OF Pb(Zr,Ti)O3 THIN FILMS FOR PIEZO-MICROELECTROMECHANICAL SYSTEM DEVICES

Lead-free (Na₀.₅K₀.₅)(Nb₀.₉₅Ta₀.₀₅)O₃–BiFeO₃ thin films for MEMS piezoelectric vibration energy harvesting devices

Characterization of Sol-Gel Derived Antimony-doped Tin Oxide Thin Films for Transparent Conductive Oxide Application

Low-Temperature Solution-Deposited Oxide Thin-Film Transistors Based on Solution-Processed Organic--Inorganic Hybrid Dielectrics

Thermal treatment effect on the magnetoelectric properties of (Ni0.5Zn0.5)Fe2O4/Pt/Pb(Zr0.3Ti0.7)O3 heterostructured thin films

FERROELECTRIC Sr2(Nb, Ta)2O7 THIN FILMS PREPARED BY CHEMICAL SOLUTION DEPOSITION

Sol-Gel derived Ga-In-Zn-O Semiconductor Layers for Solution-Processed Thin-Film Transistors

Lead-free (Na 0.5K 0.5)(Nb 0.95Ta 0.05)O 3–BiFeO 3 thin films for MEMS piezoelectric vibration energy harvesting devices

Enhanced dielectric and piezoelectric properties of low-temperature processed Pb(Zr,Ti)O 3 thick films prepared by hybrid deposition technique with chemical solution infiltration process

Magnetoelectric Coupling in Tb0.3Dy0.7Fe1.92/PbZr0.3Ti0.7O3 Bilayer Thin Films

Thin Film Transistors with Ink-Jet Printed Amorphous Oxide Semiconductors

Enhanced dielectric and piezoelectric properties of low-temperature processed Pb(Zr,Ti)O₃ thick films prepared by hybrid deposition technique with chemical solution infiltration process

Multiferroic 0.8BiFeO 3 -0.2BaTiO 3 Thin Films Prepared by Pulsed Laser Deposition

Multiferroic 0.8BiFeO^sub 3^-0.2BaTiO^sub 3^ Thin Films Prepared by Pulsed Laser Deposition

Multiferroic 0.8BiFeO sub(3)-0.2BaTiO sub(3) Thin Films Prepared by Pulsed Laser Deposition

Magnetoelectric Coupling in Tb 0.3 Dy 0.7 Fe 1.92 /PbZr 0.3 Ti 0.7 O 3 Bilayer Thin Films

Magnetoelectric Coupling in Tb 0.3 Dy 0.7 Fe 1.92 /PbZr 0.3 Ti 0.7 O 3 Bilayer Thin Films

Magnetoelectric properties of magnetic/ferroelectric multilayer thin films

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