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Catalytic effect of Ca and K on CO2 gasification of spruce wood char

Fuel (Guildford), 2015-06, Vol.150, p.464-472

2015

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Biogas and combustion potential of fresh reed canary grass grown on cutover peatland

Mires and peat, 2020-01, Vol.26 (10), p.1-9

2020

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Caustics Mapping: An Image-Space Technique for Real-Time Caustics

IEEE transactions on visualization and computer graphics, 2007-03, Vol.13 (2), p.272-280

2007

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Catalytic effect of Ca and K on CO 2 gasification of spruce wood char

Fuel (Guildford), 2015-06, Vol.150, p.464-472

2015

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Photoreflectance evidence of multiple band gaps in dilute GaInNAs layers lattice-matched to GaAs

Journal of applied physics, 2004-09, Vol.96 (5), p.2576-2579

2004

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Co-production of 1,3 propanediol and long-chain alkyl esters from crude glycerol

New biotechnology, 2019-11, Vol.53, p.81-89

2019

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Carbon conversion predictor for fluidized bed gasification of biomass fuels—from TGA measurements to char gasification particle model

Biomass conversion and biorefinery, 2012-09, Vol.2 (3), p.265-274

2012

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Electronic and structural properties of GaAs(100)(2×4) and InAs(100)(2×4) surfaces studied by core-level photoemission and- scanning tunneling microscopy

Physical review. B, Condensed matter and materials physics, 2005-07, Vol.72 (4), p.045321.1-045321.9

2005

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Effects of insertion of strain-mediating layers on luminescence properties of 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures

Applied physics letters, 2002-04, Vol.80 (17), p.3054-3056

2002

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High-power (>1 W) dilute nitride semiconductor disk laser emitting at 1240 nm

New journal of physics, 2007-05, Vol.9 (5), p.140-140

2007

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High-performance singlemode InGaNAs/GaAs laser

Electronics letters, 2004-05, Vol.40 (10), p.604-605

2004

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1 W at 617 nm generation by intracavity frequency conversion in semiconductor disk laser

Electronics letters, 2007-08, Vol.43 (18), p.980-981

2007

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Suppression of interfacial atomic diffusion in InGaNAs/GaAs heterostructures grown by molecular-beam epitaxy

Applied physics letters, 2002-06, Vol.80 (25), p.4720-4722

2002

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P1.28 The Accumulation of Risk Factors of Metabolic Syndrome is Associated with the Increase in Arterial Stiffness Among Middle-Aged Male Industrial Workers

Artery research, 2012, Vol.6 (4), p.159-159

2012

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1.32-μm GaInNAs-GaAs laser with a low threshold current density

IEEE photonics technology letters, 2002-03, Vol.14 (3), p.275-277

2002

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The accumulation of risk factors of metabolic syndrome is associated with the increase in arterial stiffness among middle-aged male industrial workers

Artery research, 2012-12, Vol.6 (4), p.159-159

2012

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Annealing effects on optical and structural properties of 1.3-μm GaInNAs/GaAs quantum-well samples capped with dielectric layers

Applied physics letters, 2004-01, Vol.84 (4), p.478-480

2004

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Strain-compensated GaInNAs structures for 1.3-μm lasers

IEEE journal of selected topics in quantum electronics, 2002-07, Vol.8 (4), p.787-794

2002

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Mechanism of photoluminescence blue shift in InGaAsN/GaAs quantum wells during annealing

Journal of crystal growth, 2005-05, Vol.278 (1), p.259-263

2005

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Ion irradiation induced nitrogen mobility in a GaInNAs quantum well laser

Semiconductor science and technology, 2008-07, Vol.23 (7), p.075028

2008

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The behaviour of optical and structural properties of GaInNAs/GaAs quantum wells upon annealing

New journal of physics, 2004-12, Vol.6, p.192-192

2004

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Optical properties of ion irradiated and annealed InGaAs/GaAs quantum wells and semiconductor saturable absorber mirrors

Journal of physics. D, Applied physics, 2005-04, Vol.38 (7), p.985-989

2005

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Performance comparison of GaInNAs vertical-cavity semiconductor optical amplifiers

IEEE journal of quantum electronics, 2005-05, Vol.41 (5), p.642-649

2005

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Influence of nitride and oxide cap layers upon the annealing of 1.3 μm GaInNAs/GaAs quantum wells

Journal of applied physics, 2004-04, Vol.95 (8), p.4102-4104

2004

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Effects of heavy-ion and light-ion irradiation on the room temperature carrier dynamics of InGaAs/GaAs quantum wells

Semiconductor science and technology, 2006-05, Vol.21 (5), p.661-664

2006

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Catalytic effect of Ca and K on CO2 gasification of spruce wood char

Biogas and combustion potential of fresh reed canary grass grown on cutover peatland

Caustics Mapping: An Image-Space Technique for Real-Time Caustics

Catalytic effect of Ca and K on CO 2 gasification of spruce wood char

Photoreflectance evidence of multiple band gaps in dilute GaInNAs layers lattice-matched to GaAs

Co-production of 1,3 propanediol and long-chain alkyl esters from crude glycerol

Carbon conversion predictor for fluidized bed gasification of biomass fuels—from TGA measurements to char gasification particle model

Electronic and structural properties of GaAs(100)(2×4) and InAs(100)(2×4) surfaces studied by core-level photoemission and- scanning tunneling microscopy

Effects of insertion of strain-mediating layers on luminescence properties of 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures

High-power (>1 W) dilute nitride semiconductor disk laser emitting at 1240 nm

High-performance singlemode InGaNAs/GaAs laser

1 W at 617 nm generation by intracavity frequency conversion in semiconductor disk laser

Suppression of interfacial atomic diffusion in InGaNAs/GaAs heterostructures grown by molecular-beam epitaxy

P1.28 The Accumulation of Risk Factors of Metabolic Syndrome is Associated with the Increase in Arterial Stiffness Among Middle-Aged Male Industrial Workers

1.32-μm GaInNAs-GaAs laser with a low threshold current density

The accumulation of risk factors of metabolic syndrome is associated with the increase in arterial stiffness among middle-aged male industrial workers

Annealing effects on optical and structural properties of 1.3-μm GaInNAs/GaAs quantum-well samples capped with dielectric layers

Strain-compensated GaInNAs structures for 1.3-μm lasers

Mechanism of photoluminescence blue shift in InGaAsN/GaAs quantum wells during annealing

Ion irradiation induced nitrogen mobility in a GaInNAs quantum well laser

The behaviour of optical and structural properties of GaInNAs/GaAs quantum wells upon annealing

Optical properties of ion irradiated and annealed InGaAs/GaAs quantum wells and semiconductor saturable absorber mirrors

Performance comparison of GaInNAs vertical-cavity semiconductor optical amplifiers

Influence of nitride and oxide cap layers upon the annealing of 1.3 μm GaInNAs/GaAs quantum wells

Effects of heavy-ion and light-ion irradiation on the room temperature carrier dynamics of InGaAs/GaAs quantum wells

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