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Compact Calibration Source of Neutrons on the Basis of the Cf Radionuclide and a Silicon Semiconductor Detector

Physics of atomic nuclei, 2022-12, Vol.85 (6), p.931-935

2022

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The nanosecond studies of granular carbon nanostructures based on high temperature superconductors

Journal of physics. Conference series, 2018-12, Vol.1124 (8), p.81004

2018

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Influence of α-particles irradiation on the properties and performance of silicon semiconductor detectors

Journal of physics. Conference series, 2021-11, Vol.2103 (1), p.12139

2021

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Photoelectric properties of MIS structures on high-resistivity p-type silicon with aluminium nitride tunnelling insulator

Journal of physics. Conference series, 2020-12, Vol.1697 (1), p.12181

2020

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Si(Li) detector with ultra-thin entrance window on the diffusive lithium side

Journal of physics. Conference series, 2019-11, Vol.1400 (5), p.55056

2019

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High-Voltage 4H-SiC Schottky Diodes with Field-Plate Edge Termination

Semiconductors (Woodbury, N.Y.), 2021-02, Vol.55 (2), p.243-249

2021

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High-Voltage 4H-SiC-Based Avalanche Diodes with a Negative Bevel

Semiconductors (Woodbury, N.Y.), 2021-04, Vol.55 (4), p.405-409

2021

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Micro-profiling of 4H-SiC by Dry Etching to Form a Schottky Barrier Diode

Semiconductors (Woodbury, N.Y.), 2020, Vol.54 (1), p.144-149

2020

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Nanostructured membranes based on a natural carbon material

Journal of optical technology, 2016-05, Vol.83 (5), p.286

2016

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4H-SiC Based Subnanosecond (150 ps) High-Voltage (1600 V) Current Breakers

Technical physics letters, 2018-02, Vol.44 (2), p.87-89

2018

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Lithium intercalation into amorphous-silicon thin films: An electrochemical-impedance study

Russian journal of electrochemistry, 2006-07, Vol.42 (7), p.708-714

2006

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Degradation of silicon detectors under long-term irradiation by 252 Cf fission products

Journal of physics. Conference series, 2021-11, Vol.2103 (1), p.12138

2021

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Degradation of silicon detectors under long-term irradiation by 252Cf fission products

Journal of physics. Conference series, 2021-11, Vol.2103 (1)

2021

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Dynamic characteristics of 4H-SiC drift step recovery diodes

Semiconductors (Woodbury, N.Y.), 2015-11, Vol.49 (11), p.1511-1515

2015

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The Effect of Texturing of Silicon Wafer Surfaces for Solar Photoelectric Transducers on Their Strength Properties

Technical physics, 2020-07, Vol.65 (7), p.1123-1129

2020

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Modification of the structure and percolation of current in an array of single-walled carbon nanotubes

Physics of the solid state, 2014-07, Vol.56 (7), p.1463-1466

2014

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Lithium intercalation in thin amorphous-silicon films

Russian journal of electrochemistry, 2006-04, Vol.42 (4), p.363-369

2006

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Percolation, self-organized criticality, and electrical instability in carbon nanostructures

Physics of the solid state, 2012-11, Vol.54 (11), p.2325-2328

2012

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Resistance of 4H-SiC Schottky barriers at high forward-current densities

Semiconductors (Woodbury, N.Y.), 2015-07, Vol.49 (7), p.930-934

2015

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On the collection of photocarriers in high-resistance silicon amorphous-crystalline heterostructures

Semiconductors (Woodbury, N.Y.), 2014-09, Vol.48 (9), p.1167-1173

2014

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Carbon nanostructures as an example of the self-organized criticality

Physics of the solid state, 2012-03, Vol.54 (3), p.642-646

2012

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The photosensitivity of amorphous-crystalline silicon heterostructures with an inversion channel

Technical physics letters, 2014-05, Vol.40 (5), p.397-400

2014

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Specific features of nanosecond current-voltage characteristics of an array of carbon nanotubes

Technical physics letters, 2013-03, Vol.39 (3), p.302-304

2013

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V. F. Masterov’s school and fullerene research at the department of experimental physics, St. Petersburg State Technical University

Semiconductors (Woodbury, N.Y.), 2002-11, Vol.36 (11), p.1204-1208

2002

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Effect of the femtosecond laser treatment of hydrogenated amorphous silicon films on their structural, optical, and photoelectric properties

Semiconductors (Woodbury, N.Y.), 2012-06, Vol.46 (6), p.749-754

2012

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Compact Calibration Source of Neutrons on the Basis of the Cf Radionuclide and a Silicon Semiconductor Detector

The nanosecond studies of granular carbon nanostructures based on high temperature superconductors

Influence of α-particles irradiation on the properties and performance of silicon semiconductor detectors

Photoelectric properties of MIS structures on high-resistivity p-type silicon with aluminium nitride tunnelling insulator

Si(Li) detector with ultra-thin entrance window on the diffusive lithium side

High-Voltage 4H-SiC Schottky Diodes with Field-Plate Edge Termination

High-Voltage 4H-SiC-Based Avalanche Diodes with a Negative Bevel

Micro-profiling of 4H-SiC by Dry Etching to Form a Schottky Barrier Diode

Nanostructured membranes based on a natural carbon material

4H-SiC Based Subnanosecond (150 ps) High-Voltage (1600 V) Current Breakers

Lithium intercalation into amorphous-silicon thin films: An electrochemical-impedance study

Degradation of silicon detectors under long-term irradiation by 252 Cf fission products

Degradation of silicon detectors under long-term irradiation by 252Cf fission products

Dynamic characteristics of 4H-SiC drift step recovery diodes

The Effect of Texturing of Silicon Wafer Surfaces for Solar Photoelectric Transducers on Their Strength Properties

Modification of the structure and percolation of current in an array of single-walled carbon nanotubes

Lithium intercalation in thin amorphous-silicon films

Percolation, self-organized criticality, and electrical instability in carbon nanostructures

Resistance of 4H-SiC Schottky barriers at high forward-current densities

On the collection of photocarriers in high-resistance silicon amorphous-crystalline heterostructures

Carbon nanostructures as an example of the self-organized criticality

The photosensitivity of amorphous-crystalline silicon heterostructures with an inversion channel

Specific features of nanosecond current-voltage characteristics of an array of carbon nanotubes

V. F. Masterov’s school and fullerene research at the department of experimental physics, St. Petersburg State Technical University

Effect of the femtosecond laser treatment of hydrogenated amorphous silicon films on their structural, optical, and photoelectric properties

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