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A Realistic Method for Time-Dependent Dielectric Breakdown Reliability Analysis for Advanced Technology Node

IEEE transactions on electron devices, 2016-02, Vol.63 (2), p.755-759

2016

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Residual stress measurement in thin films at sub-micron scale using Focused Ion Beam milling and imaging

Thin solid films, 2012, Vol.520 (6), p.2073-2076

2012

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Charge transport model to predict intrinsic reliability for dielectric materials

Journal of applied physics, 2015-09, Vol.118 (12)

2015

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In situ study on low- k interconnect time-dependent-dielectric-breakdown mechanisms

Journal of applied physics, 2014-03, Vol.115 (12)

2014

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Elastic anisotropy of Cu and its impact on stress management for 3D IC: Nanoindentation and TCAD simulation study

Journal of materials research, 2012-01, Vol.27 (1), p.339-348

2012

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Nanomechanical characterization of sputtered RuO2 thin film on silicon substrate for solid state electronic devices

Thin solid films, 2011-01, Vol.519 (6), p.1914-1922

2011

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Field acceleration factor extraction in MOL and BEOL TDDB

2017 IEEE International Reliability Physics Symposium (IRPS), 2017, p.DG-2.1-DG-2.5

2017

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The effect of the pore topology on the elastic modulus of organosilicate glasses

Journal of materials research, 2013-05, Vol.28 (9), p.1262-1268

2013

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Determining the interfacial toughness of low- k films on Si substrate by wedge indentation: Further studies

Acta materialia, 2008-03, Vol.56 (5), p.977-984

2008

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Impact of TSV process on 14nm FEOL and BEOL reliability

2017 IEEE International Reliability Physics Symposium (IRPS), 2017, p.4A-2.1-4A-2.7

2017

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Nanometer deformation of elastically anisotropic materials studied by nanoindentation

Philosophical magazine (2003. Print), 2012-09, Vol.92 (25-27), p.3142-3157

2012

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Wedge indentation studies of low- k films at inert, water and ambient environments

Materials science & engineering. A, Structural materials : properties, microstructure and processing, 2009-08, Vol.518 (1), p.132-138

2009

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Optimizing Cu barrier thickness for interconnects performance, reliability and yield

2016 IEEE International Reliability Physics Symposium (IRPS), 2016, p.IT-1-1-IT-1-4

2016

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Impact of electrode surface modulation on time-dependent dielectric breakdown

2015 IEEE International Reliability Physics Symposium, 2015, p.2A.1.1-2A.1.5

2015

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An experimental methodology for the in-situ observation of the time-dependent dielectric breakdown mechanism in Copper/low-k on-chip interconnect structures

2013 IEEE International Reliability Physics Symposium (IRPS), 2013, p.2F.1.1-2F.1.5

2013

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Charge transport model to predict dielectric breakdown as a function of voltage, temperature, and thickness

Microelectronics and reliability, 2018-12, Vol.91, p.232-242

2018

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Method to Determine the Root Cause of Low- \kappa SiCOH Dielectric Failure Distributions

IEEE electron device letters, 2017-01, Vol.38 (1), p.119-122

2017

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Effect of metal line width on electromigration of BEOL Cu interconnects

2018 IEEE International Reliability Physics Symposium (IRPS), 2018, p.4F.4-1-4F.4-6

2018

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Nanoindentation for reliability assessment of ULK films and interconnects structures

Microelectronic engineering, 2013-06, Vol.106, p.182-187

2013

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New insight on TDDB area scaling methodology of non-Poisson systems

2018 IEEE International Reliability Physics Symposium (IRPS), 2018, p.P-GD.1-1-P-GD.1-6

2018

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Advanced 3D Packaging of Chips and Materials Integrity: Stress-Induced Effects and Mechanical Properties of New Ultra Low-k Dielectrics for On-Chip Interconnect Stacks

Key engineering materials, 2014-01, Vol.592-593, p.563-568

2014

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Determining interfacial properties of submicron low- k films on Si substrate by using wedge indentation technique

Journal of applied physics, 2007-06, Vol.101 (12), p.123531-123531-11

2007

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Interfacial delamination cracking shapes and stress states during wedge indentation in a soft-film-on-hard-substrate system—Computational simulation and experimental studies

Journal of materials research, 2011-10, Vol.26 (19), p.2511-2523

2011

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Impact of 3D Via Middle TSV Process on 20nm Wafer Level FEOL and BEOL Reliability

2016 IEEE 66th Electronic Components and Technology Conference (ECTC), 2016, p.1593-1598

2016

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In-situ study of the TDDB-induced damage mechanism in Cu/ultra-low-k interconnect structures

Microelectronic engineering, 2015-04, Vol.137, p.47-53

2015

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A Realistic Method for Time-Dependent Dielectric Breakdown Reliability Analysis for Advanced Technology Node

Residual stress measurement in thin films at sub-micron scale using Focused Ion Beam milling and imaging

Charge transport model to predict intrinsic reliability for dielectric materials

In situ study on low- k interconnect time-dependent-dielectric-breakdown mechanisms

Elastic anisotropy of Cu and its impact on stress management for 3D IC: Nanoindentation and TCAD simulation study

Nanomechanical characterization of sputtered RuO2 thin film on silicon substrate for solid state electronic devices

Field acceleration factor extraction in MOL and BEOL TDDB

The effect of the pore topology on the elastic modulus of organosilicate glasses

Determining the interfacial toughness of low- k films on Si substrate by wedge indentation: Further studies

Impact of TSV process on 14nm FEOL and BEOL reliability

Nanometer deformation of elastically anisotropic materials studied by nanoindentation

Wedge indentation studies of low- k films at inert, water and ambient environments

Optimizing Cu barrier thickness for interconnects performance, reliability and yield

Impact of electrode surface modulation on time-dependent dielectric breakdown

An experimental methodology for the in-situ observation of the time-dependent dielectric breakdown mechanism in Copper/low-k on-chip interconnect structures

Charge transport model to predict dielectric breakdown as a function of voltage, temperature, and thickness

Method to Determine the Root Cause of Low- \kappa SiCOH Dielectric Failure Distributions

Effect of metal line width on electromigration of BEOL Cu interconnects

Nanoindentation for reliability assessment of ULK films and interconnects structures

New insight on TDDB area scaling methodology of non-Poisson systems

Advanced 3D Packaging of Chips and Materials Integrity: Stress-Induced Effects and Mechanical Properties of New Ultra Low-k Dielectrics for On-Chip Interconnect Stacks

Determining interfacial properties of submicron low- k films on Si substrate by using wedge indentation technique

Interfacial delamination cracking shapes and stress states during wedge indentation in a soft-film-on-hard-substrate system—Computational simulation and experimental studies

Impact of 3D Via Middle TSV Process on 20nm Wafer Level FEOL and BEOL Reliability

In-situ study of the TDDB-induced damage mechanism in Cu/ultra-low-k interconnect structures

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