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3-inch GaN-on-Diamond HEMTs With Device-First Transfer Technology

IEEE electron device letters, 2017-10, Vol.38 (10), p.1417-1420

2017

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High frequency H-diamond MISFET with output power density of 182 mW/mm at 10 GHz

Applied physics letters, 2019-11, Vol.115 (19)

2019

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High-Linearity AlGaN/GaN FinFETs for Microwave Power Applications

IEEE electron device letters, 2017-05, Vol.38 (5), p.615-618

2017

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Fabrication of low stress GaN-on-diamond structure via dual-sided diamond film deposition

Journal of materials science, 2021-04, Vol.56 (11), p.6903-6911

2021

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Negative constant voltage stress-induced threshold voltage instability in hydrogen-terminated diamond MOSFETs with low-temperature deposited Al2O3

Applied physics letters, 2020-09, Vol.117 (13)

2020

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Thermal Performance Improvement of AlGaN/GaN HEMTs Using Nanocrystalline Diamond Capping Layers

Micromachines (Basel), 2022-09, Vol.13 (9), p.1486

2022

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RF characterization of InP double heterojunction bipolar transistors on a flexible substrate under bending conditions

Journal of semiconductors, 2022-09, Vol.43 (9), p.92601-66

2022

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Positive Shift in Threshold Voltage Induced by CuO and NiOx Gate in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2017-08, Vol.64 (8), p.3139-3144

2017

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High-efficiency non-ideal quarter-wavelength Bragg reflection waveguide for photon-pair generation

Results in physics, 2023-01, Vol.44, p.106137, Article 106137

2023

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Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

Applied physics letters, 2015-06, Vol.106 (24)

2015

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Monolithic Integration of E/D-Mode AlGaN/GaN MIS-HEMTs

IEEE electron device letters, 2014-03, Vol.35 (3), p.336-338

2014

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1 W/mm Output Power Density for H-Terminated Diamond MOSFETs With Al2O3/SiO2 Bi-Layer Passivation at 2 GHz

IEEE journal of the Electron Devices Society, 2021, Vol.9, p.160-164

2021

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The influence of dielectric layer on the thermal boundary resistance of GaN‐on‐diamond substrate

Surface and interface analysis, 2019-07, Vol.51 (7), p.783-790

2019

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Improvement of Power Performance of GaN HEMT by Using Quaternary InAlGaN Barrier

IEEE journal of the Electron Devices Society, 2018-01, Vol.6, p.360-364

2018

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Full characterization of spontaneous parametric down conversion in non-ideal quarter-wavelength semiconductor Bragg reflection waveguide

Frontiers in physics, 2023-01, Vol.10

2023

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Effect of x-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS gates

Na mi ji shu yu jing mi gong cheng, 2020-12, Vol.3 (4), p.241-243

2020

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Integrated enhancement/depletion-mode GaN MIS-HEMTs for high-speed mixed-signal applications

Physica status solidi. A, Applications and materials science, 2016-05, Vol.213 (5), p.1241-1245

2016

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Low Interface Trap Densities and Enhanced Performance of AlGaN/GaN MOS High- Electron Mobility Transistors Using Thermal Oxidized Y2O3 Interlayer

IEEE electron device letters, 2015-12, Vol.36 (12), p.1284-1286

2015

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Improvement of RF performance for AlGaN/GaN HEMT by using a cavity structure

Solid-state electronics, 2016-12, Vol.126, p.32-35

2016

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Performance Comparison of GaN HEMTs on Diamond and SiC Substrates Based on Surface Potential Model

ECS journal of solid state science and technology, 2017, Vol.6 (12), p.Q171-Q178

2017

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A Large-Signal Model for Two-Dimensional Hole Gas Diamond MOSFET Based on the QPZD

IEEE access, 2019, Vol.7, p.76868-76877

2019

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Thermal simulation of high power GaN-on-diamond substrates for HEMT applications

Diamond and related materials, 2017-03, Vol.73, p.260-266

2017

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Responsibility optimization of a high-speed InP/InGaAs photodetector with a back reflector structure

Optics express, 2022-02, Vol.30 (4), p.4919-4929

2022

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A Monolithic Optoelectronic Integrated Circuit of InP p-i-n/Double HBTs Through Transfer-Printing Fabrication

IEEE electron device letters, 2022-10, Vol.43 (10), p.1689-1692

2022

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200 GHz Maximum Oscillation Frequency in CVD Graphene Radio Frequency Transistors

ACS applied materials & interfaces, 2016-10, Vol.8 (39), p.25645-25649

2016

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3-inch GaN-on-Diamond HEMTs With Device-First Transfer Technology

High frequency H-diamond MISFET with output power density of 182 mW/mm at 10 GHz

High-Linearity AlGaN/GaN FinFETs for Microwave Power Applications

Fabrication of low stress GaN-on-diamond structure via dual-sided diamond film deposition

Negative constant voltage stress-induced threshold voltage instability in hydrogen-terminated diamond MOSFETs with low-temperature deposited Al2O3

Thermal Performance Improvement of AlGaN/GaN HEMTs Using Nanocrystalline Diamond Capping Layers

RF characterization of InP double heterojunction bipolar transistors on a flexible substrate under bending conditions

Positive Shift in Threshold Voltage Induced by CuO and NiOx Gate in AlGaN/GaN HEMTs

High-efficiency non-ideal quarter-wavelength Bragg reflection waveguide for photon-pair generation

Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

Monolithic Integration of E/D-Mode AlGaN/GaN MIS-HEMTs

1 W/mm Output Power Density for H-Terminated Diamond MOSFETs With Al2O3/SiO2 Bi-Layer Passivation at 2 GHz

The influence of dielectric layer on the thermal boundary resistance of GaN‐on‐diamond substrate

Improvement of Power Performance of GaN HEMT by Using Quaternary InAlGaN Barrier

Full characterization of spontaneous parametric down conversion in non-ideal quarter-wavelength semiconductor Bragg reflection waveguide

Effect of x-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS gates

Integrated enhancement/depletion-mode GaN MIS-HEMTs for high-speed mixed-signal applications

Low Interface Trap Densities and Enhanced Performance of AlGaN/GaN MOS High- Electron Mobility Transistors Using Thermal Oxidized Y2O3 Interlayer

Improvement of RF performance for AlGaN/GaN HEMT by using a cavity structure

Performance Comparison of GaN HEMTs on Diamond and SiC Substrates Based on Surface Potential Model

A Large-Signal Model for Two-Dimensional Hole Gas Diamond MOSFET Based on the QPZD

Thermal simulation of high power GaN-on-diamond substrates for HEMT applications

Responsibility optimization of a high-speed InP/InGaAs photodetector with a back reflector structure

A Monolithic Optoelectronic Integrated Circuit of InP p-i-n/Double HBTs Through Transfer-Printing Fabrication

200 GHz Maximum Oscillation Frequency in CVD Graphene Radio Frequency Transistors

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