UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 26

Sortiert nach

Enhanced interface properties of diamond MOSFETs with Al2O3 gate dielectric deposited via ALD at a high temperature

中国物理B（英文版）, 2021-05, Vol.30 (5), p.746-752

2021

Volltextzugriff (PDF)

AlGaN/GaN HEMTs on 4-Inch Silicon Substrates in the Presence of 2.7-μm -Thick Epilayers with the Maximum Off-State Breakdown Voltage of 500 V

Chinese physics letters, 2014-03, Vol.31 (3), p.129-132

2014

Volltextzugriff (PDF)

Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs

Chinese physics B, 2018-04, Vol.27 (4), p.47307

2018

Volltextzugriff (PDF)

A Substitution for the High- k Dielectric in an AlGaN/GaN Metal-insulator-Semiconductor Heterostructure

Chinese physics letters, 2012-05, Vol.29 (5), p.57702-1-057702-4, Article 057702

2012

Volltextzugriff (PDF)

Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body In0.53Ga0.47As-on-Insulator n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

中国物理快报：英文版, 2015-11 (11), p.127-130

唐晓雨卢继武张睿吴枉然刘畅施毅黄子乾孔月婵赵毅

2015

Volltextzugriff (PDF)

High performance wafer scale flexible InP double heterogeneous bipolar transistors

Semiconductor science and technology, 2021-03, Vol.36 (3), p.3

2021

Volltextzugriff (PDF)

Integrating periodically CL-TWE MZI electro-optic modulator based on InP-MQW optical waveguides

2018 Asia Communications and Photonics Conference (ACP), 2018, p.1-3

2018

Volltextzugriff (PDF)

Enhanced interface properties of diamond MOSFETs with Al 2 O 3 gate dielectric deposited via ALD at a high temperature

Chinese physics B, 2021-05, Vol.30 (5), p.58101

2021

Volltextzugriff (PDF)

Enhanced interface properties of diamond MOSFETs with Al2O3 gate dielectric deposited via ALD at a high temperature Project supported by the National Natural Science Foundation of China (Grant No. 61922021), the National Key Research and Development Project, China (Grant No. 2018YFE0115500), and the Fund from the Sichuan Provincial Engineering Research Center for Broadband Microwave Circuit High Density Integration, China

Chinese physics B, 2021-05, Vol.30 (5)

2021

Volltextzugriff (PDF)

Influence of Polarization Effects on the Energy Band of AlGaN/GaN/AlGaN Heterostructures

Chinese physics letters, 2004-04, Vol.21 (4), p.720-722

2004

Volltextzugriff (PDF)

Bright photon-pair source based on a silicon dual-Mach-Zehnder microring

Science China. Physics, mechanics & astronomy, 2020-02, Vol.63 (2), p.220362, Article 220362

2020

Volltextzugriff (PDF)

Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs Project supported by the National Natural Science Foundation of China (Grant Nos. 61504125, 61474101, and 61505181)

Chinese physics B, 2018-04, Vol.27 (4)

2018

Volltextzugriff (PDF)

Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body In0.53Ga0.47As-on-Insulator n-Channel Metal-Oxide-Semiconductor Field-Effect TransistorSupported by the National Program on Key Basic Research Project of China under Grant No 2011CBA00607, the National Natural Science Foundation of China under Grant Nos 61106089 and 61376097, and the Zhejiang Provincial Natural Science Foundation of China under Grant No LR14F040001

Chinese physics letters, 2015-11, Vol.32 (11)

2015

Volltextzugriff (PDF)

Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body In sub(0.53)Ga sub(0.47)As-on-Ins ulator n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

Chinese physics letters, 2015-11, Vol.32 (11), p.117302-117301

2015

Volltextzugriff (PDF)

Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body In 0.53 Ga 0.47 As-on-Insulator n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

Chinese physics letters, 2015-11, Vol.32 (11), p.117302

2015

Volltextzugriff (PDF)

High Breakdown Voltage GaN HEMT Device Fabricated on Self-Standing GaN Substrate

Applied Mechanics and Materials, 2013-08, Vol.347-350, p.1535-1539

2013

Volltextzugriff (PDF)

High Breakdown Voltage GaN Power HEMT on Si Substrate

Advanced materials research, 2013, Vol.805-806, p.948-953

2013

Volltextzugriff (PDF)

A 300GHz Monolithic Integrated Amplifier in 0.5-μm InP Double Heterojunction Bipolar Transistor Technology

2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT), 2018, p.1-3

2018

Volltextzugriff (PDF)

PROSPECTIVE RANDOMIZED STUDY OF SELECTIVE NECK DISSECTION VERSUS OBSERVATION FOR NO NECK OF EARLY TONGUE CARCINOMA

Head & neck, 2009-06, Vol.31 (6), p.765-772

2009

Volltextzugriff (PDF)

Memory Trajectories and Disability Among Older Couples: The Mediating Role of Depressive Symptoms

The journals of gerontology. Series B, Psychological sciences and social sciences, 2024-02, Vol.79 (2)

2024

Volltextzugriff (PDF)

Prospective randomized study of selective neck dissection versus observation for N0 neck of early tongue carcinoma

Head & neck, 2009-06, Vol.31 (6), p.765-772

2009

Volltextzugriff (PDF)

Co-development of senior primary students’ computational thinking concepts and practices: Implications for teaching and learning

Education and information technologies, 2024-08

2024

Volltextzugriff (PDF)

Adverse selection, inventory cost and market depth: An empirical analysis of intraday price movement in the Stock Exchange of Hong Kong

Chan, Yue Cheong

1997

Volltextzugriff (PDF)

An exploratory study on the subjective experience of schizophrenia from a non -representative sample of 12 Chinese with schizophrenia in Hong Kong

Chan, Yue Kuen Estella

2004

Volltextzugriff (PDF)

Impacts of Technology Implementation on Individual Behaviors: Three Essays

Chan, Kwok Yue

2010

Volltextzugriff (PDF)

1 – 25 von 26

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(20)
Mit Volltextzugriff
(22)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(13)
Physical Sciences
(9)
Physics
(8)
Physics, Multidisciplinary
(7)
Technology
(4)
Ald Temperature
(2)
Algan/ganfinfets
(2)
Aluminum Gallium Nitrides
(2)
Carcinoma
(2)
Conductance Method
(2)
Diamond Mosfet
(2)
Dissection
(2)
Engineering
(2)
Engineering, Electrical & Electronic
(2)
Female
(2)
Gallium Nitrides
(2)
Gates
(2)
Humans
(2)
Interface Trap
(2)
Life Sciences & Biomedicine
(2)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

Enhanced interface properties of diamond MOSFETs with Al2O3 gate dielectric deposited via ALD at a high temperature

AlGaN/GaN HEMTs on 4-Inch Silicon Substrates in the Presence of 2.7-μm -Thick Epilayers with the Maximum Off-State Breakdown Voltage of 500 V

Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs

A Substitution for the High- k Dielectric in an AlGaN/GaN Metal-insulator-Semiconductor Heterostructure

Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body In0.53Ga0.47As-on-Insulator n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

High performance wafer scale flexible InP double heterogeneous bipolar transistors

Integrating periodically CL-TWE MZI electro-optic modulator based on InP-MQW optical waveguides

Enhanced interface properties of diamond MOSFETs with Al 2 O 3 gate dielectric deposited via ALD at a high temperature

Influence of Polarization Effects on the Energy Band of AlGaN/GaN/AlGaN Heterostructures

Bright photon-pair source based on a silicon dual-Mach-Zehnder microring

Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs Project supported by the National Natural Science Foundation of China (Grant Nos. 61504125, 61474101, and 61505181)

Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body In sub(0.53)Ga sub(0.47)As-on-Ins ulator n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body In 0.53 Ga 0.47 As-on-Insulator n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

High Breakdown Voltage GaN HEMT Device Fabricated on Self-Standing GaN Substrate

High Breakdown Voltage GaN Power HEMT on Si Substrate

A 300GHz Monolithic Integrated Amplifier in 0.5-μm InP Double Heterojunction Bipolar Transistor Technology

PROSPECTIVE RANDOMIZED STUDY OF SELECTIVE NECK DISSECTION VERSUS OBSERVATION FOR NO NECK OF EARLY TONGUE CARCINOMA

Memory Trajectories and Disability Among Older Couples: The Mediating Role of Depressive Symptoms

Prospective randomized study of selective neck dissection versus observation for N0 neck of early tongue carcinoma

Co-development of senior primary students’ computational thinking concepts and practices: Implications for teaching and learning

Adverse selection, inventory cost and market depth: An empirical analysis of intraday price movement in the Stock Exchange of Hong Kong

An exploratory study on the subjective experience of schizophrenia from a non -representative sample of 12 Chinese with schizophrenia in Hong Kong

Impacts of Technology Implementation on Individual Behaviors: Three Essays

Suchergebnisse filtern