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Amorphous InGaZnO Thin-Film Transistors-Part I: Complete Extraction of Density of States Over the Full Subband-Gap Energy Range

IEEE transactions on electron devices, 2012-10, Vol.59 (10), p.2689-2698

2012

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Amorphous InGaZnO Thin-Film Transistors-Part II: Modeling and Simulation of Negative Bias Illumination Stress-Induced Instability

IEEE transactions on electron devices, 2012-10, Vol.59 (10), p.2699-2706

2012

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Impact of Oxygen Flow Rate on the Instability Under Positive Bias Stresses in DC-Sputtered Amorphous InGaZnO Thin-Film Transistors

IEEE electron device letters, 2012-01, Vol.33 (1), p.62-64

2012

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Differential Ideality Factor Technique for Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors

IEEE electron device letters, 2012-03, Vol.33 (3), p.399-401

2012

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Electrical stress-induced instability of amorphous indium-gallium-zinc oxide thin-film transistors under bipolar ac stress

Applied physics letters, 2009-09, Vol.95 (13), p.132101-132101-3

2009

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Analytical Models for Drain Current and Gate Capacitance in Amorphous InGaZnO Thin-Film Transistors With Effective Carrier Density

IEEE electron device letters, 2011-11, Vol.32 (11), p.1546-1548

2011

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Endurance Characteristics of Amorphous-InGaZnO Transparent Flash Memory With Gold Nanocrystal Storage Layer

IEEE transactions on electron devices, 2011-11, Vol.58 (11), p.3940-3947

2011

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Extraction of Separated Source and Drain Resistances in Amorphous Indium-Gallium-Zinc Oxide TFTs Through C- V Characterization

IEEE electron device letters, 2011-06, Vol.32 (6), p.761-763

2011

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The Effect of the Active Layer Thickness on the Negative Bias Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors

IEEE electron device letters, 2011-10, Vol.32 (10), p.1388-1390

2011

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Extraction of the Channel Mobility in InGaZnO TFTs Using Multifrequency Capacitance-Voltage Method

IEEE electron device letters, 2012-06, Vol.33 (6), p.815-817

2012

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AC Stress-Induced Degradation of Amorphous InGaZnO Thin Film Transistor Inverter

Japanese Journal of Applied Physics, 2011-09, Vol.50 (9), p.090202-090202-3

2011

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AC Stress-Induced Degradation of Amorphous InGaZnO Thin Film Transistor Inverter

Japanese Journal of Applied Physics, 2011-09, Vol.50 (9R), p.90202

2011

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Effect of the Active Layer Thickness on the Negative Bias Illumination Stress-induced Instability in Amorphous InGaZnO Thin-film Transistors

Journal of the Korean Physical Society, 2011, 59(21), , pp.505-510

2011

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Quantitative Analysis of Negative Bias Illumination Stress-Induced Instability Mechanisms in Amorphous InGaZnO Thin-Film Transistors

Journal of the Korean Physical Society, 2011, 59(21), , pp.474-477

2011

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Physics-Based SPICE Model of a-InGaZnO Thin-Film Transistor Using Verilog-A

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2011, 11(3), 43, pp.153-161

2011

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Comparative study of quasi-static and normal capacitance–voltage characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors

Solid-state electronics, 2011-02, Vol.56 (1), p.95-99

2011

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Extraction of Separated Source and Drain Resistances in Amorphous Indium-Gallium-Zinc Oxide TFTs Through [Formula Omitted]- [Formula Omitted] Characterization

IEEE electron device letters, 2011-06, Vol.32 (6), p.761

2011

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Quantitative Analysis of Negative Bias Illumination Stress-Induced Instability Mechanisms in Amorphous InGaZnO Thin-Film Transistors

Journal of the Korean Physical Society, 2011-08, p.474-477

2011

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Effect of the Active Layer Thickness on the Negative Bias Illumination Stress-induced Instability in Amorphous InGaZnO Thin-film Transistors

Journal of the Korean Physical Society, 2011-08, p.505-510

2011

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P-141L: Late-News Poster: Characterization of Physical Parameter-Based Reliability on the Negative Bias Illumination Stress with Wavelength-Dependence in Amorphous Silicon Thin-Film Transistors

SID International Symposium Digest of technical papers, 2012-06, Vol.43 (1), p.1133-1136

2012

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3.4L: Late-News Paper: Physical Model and Simulation Platform for High-Level Instability-Aware Design of Amorphous Oxide Semiconductor Thin-Film Transistors

SID International Symposium Digest of technical papers, 2012-06, Vol.43 (1), p.11-14

2012

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P-202L: Late-News Poster: Density-of-States Based Analysis on the Effect of Active Thin-film Thickness on Current Stress-induced Instability in Amorphous InGaZnO AMOLED Driver TFTs

SID International Symposium Digest of technical papers, 2011-06, Vol.42 (1), p.1223-1226

2011

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P-203L: Late-News Poster: Analytical I-V and C-V Models for Amorphous InGaZnO TFTs and Their Application to Circuit Simulations

SID International Symposium Digest of technical papers, 2011-06, Vol.42 (1), p.1227-1230

2011

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Amorphous InGaZnO Thin-Film Transistors-Part I: Complete Extraction of Density of States Over the Full Subband-Gap Energy Range

Amorphous InGaZnO Thin-Film Transistors-Part II: Modeling and Simulation of Negative Bias Illumination Stress-Induced Instability

Impact of Oxygen Flow Rate on the Instability Under Positive Bias Stresses in DC-Sputtered Amorphous InGaZnO Thin-Film Transistors

Differential Ideality Factor Technique for Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors

Electrical stress-induced instability of amorphous indium-gallium-zinc oxide thin-film transistors under bipolar ac stress

Analytical Models for Drain Current and Gate Capacitance in Amorphous InGaZnO Thin-Film Transistors With Effective Carrier Density

Endurance Characteristics of Amorphous-InGaZnO Transparent Flash Memory With Gold Nanocrystal Storage Layer

Extraction of Separated Source and Drain Resistances in Amorphous Indium-Gallium-Zinc Oxide TFTs Through C- V Characterization

The Effect of the Active Layer Thickness on the Negative Bias Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors

Extraction of the Channel Mobility in InGaZnO TFTs Using Multifrequency Capacitance-Voltage Method

AC Stress-Induced Degradation of Amorphous InGaZnO Thin Film Transistor Inverter

AC Stress-Induced Degradation of Amorphous InGaZnO Thin Film Transistor Inverter

Effect of the Active Layer Thickness on the Negative Bias Illumination Stress-induced Instability in Amorphous InGaZnO Thin-film Transistors

Quantitative Analysis of Negative Bias Illumination Stress-Induced Instability Mechanisms in Amorphous InGaZnO Thin-Film Transistors

Physics-Based SPICE Model of a-InGaZnO Thin-Film Transistor Using Verilog-A

Comparative study of quasi-static and normal capacitance–voltage characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors

Extraction of Separated Source and Drain Resistances in Amorphous Indium-Gallium-Zinc Oxide TFTs Through [Formula Omitted]- [Formula Omitted] Characterization

Quantitative Analysis of Negative Bias Illumination Stress-Induced Instability Mechanisms in Amorphous InGaZnO Thin-Film Transistors

Effect of the Active Layer Thickness on the Negative Bias Illumination Stress-induced Instability in Amorphous InGaZnO Thin-film Transistors

P-141L: Late-News Poster: Characterization of Physical Parameter-Based Reliability on the Negative Bias Illumination Stress with Wavelength-Dependence in Amorphous Silicon Thin-Film Transistors

3.4L: Late-News Paper: Physical Model and Simulation Platform for High-Level Instability-Aware Design of Amorphous Oxide Semiconductor Thin-Film Transistors

P-202L: Late-News Poster: Density-of-States Based Analysis on the Effect of Active Thin-film Thickness on Current Stress-induced Instability in Amorphous InGaZnO AMOLED Driver TFTs

P-203L: Late-News Poster: Analytical I-V and C-V Models for Amorphous InGaZnO TFTs and Their Application to Circuit Simulations

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