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Electrical transport properties of highly doped N-type GaN materials

Semiconductor science and technology, 2022-05, Vol.37 (5), p.55012

2022

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Pressure-induced penetration of guest molecules in high-silica zeolites: the case of mordenite

Physical chemistry chemical physics : PCCP, 2015-01, Vol.17 (37), p.24262-24274

2015

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Growth of GaN:Mg crystals by high nitrogen pressure solution method in multi-feed–seed configuration

Journal of crystal growth, 2012-07, Vol.350 (1), p.50-55

2012

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High Temperature Annealing of MBE-grown Mg-doped GaN

Journal of physics. Conference series, 2017, Vol.864 (1), p.12018

2017

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Optical investigations and strain effect in AlGaN/GaN epitaxial layers

Journal of physics. Conference series, 2017, Vol.864 (1), p.12021

2017

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Coexistence of free holes and electrons in InN:Mg with In- and N-growth polarities

Journal of applied physics, 2012-05, Vol.111 (9), p.093719-093719-5

2012

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Pressure tuning of the morphotropic phase boundary in piezoelectric lead zirconate titanate

Physical review. B, Condensed matter and materials physics, 2004-07, Vol.70 (1), p.014108.1-014108.4, Article 014108

2004

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Advantage of In- over N-polarity for disclosure of p-type conduction in InN:Mg

Journal of applied physics, 2014-05, Vol.115 (17)

2014

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Pressure studies of multicarrier conduction in undoped InN grown on GaN buffer

Physica Status Solidi. B: Basic Solid State Physics, 2013-04, Vol.250 (4), p.746-749

2013

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The influence of free-carrier concentration on the PEC etching of GaN: A calibration with Raman spectroscopy

Journal of crystal growth, 2007-09, Vol.307 (2), p.298-301

2007

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High temperature behaviour of AlGaN/AlN/GaN Hall-FET sensors

Materials science & engineering. B, Solid-state materials for advanced technology, 2009-11, Vol.165 (1), p.1-4

2009

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p-type conductivity in GaN:Zn monocrystals grown by ammonothermal method

Journal of applied physics, 2021-04, Vol.129 (13)

2021

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Resonant localized donor state above the conduction band minimum in InN

Applied physics letters, 2005-06, Vol.86 (26), p.262105-262105-3

2005

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Kinetics of low-temperature activation of acceptors in magnesium-doped gallium nitride epilayers grown by metal-organic vapor-phase epitaxy

Journal of applied physics, 2006-02, Vol.99 (3), p.033703-033703-5

2006

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Parallel conduction in p-type gallium nitride homo-structures

Semiconductor science and technology, 2008-09, Vol.23 (9), p.095007

2008

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Transport measurements on InAs/GaSb superlattice structures for mid-infrared photodiode

Journal of physics. Conference series, 2009-11, Vol.193 (1), p.012030

2009

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Investigation of AlGaN∕AlN∕GaN heterostructures for magnetic sensor application from liquid helium temperature to 300°C

Applied physics letters, 2008-01, Vol.92 (4)

2008

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Temperature dependence of electrical properties of gallium-nitride bulk single crystals doped with Mg and their evolution with annealing

Journal of applied physics, 2001-06, Vol.89 (12), p.7960-7965

2001

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High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials

Journal of applied physics, 2020-08, Vol.128 (8)

2020

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Unambiguous determination of carrier concentration and mobility for InAs/GaSb superlattice photodiode optimization

Journal of applied physics, 2009-08, Vol.106 (3)

2009

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Time-resolved spectroscopy of (Al,Ga,In)N based quantum wells: Localization effects and effective reduction of internal electric fields

Physical review. B, Condensed matter, 2002-11, Vol.66 (19), Article 195330

2002

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Electrical properties of short period InAs/GaSb superlattice

Physica status solidi. C, 2007-04, Vol.4 (4), p.1494-1498

2007

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Pressure-induced penetration of guest molecules in high-silica zeolites: the case of mordeniteElectronic supplementary information (ESI) available: Atomic coordinates, bond distances, and X-ray diffraction patterns. See DOI: 10.1039/c5cp03561a

2015-09

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High-pressure polymorph of LuFe2O4 with room-temperature antiferromagnetic order

Physical review. B, Condensed matter and materials physics, 2015-06, Vol.91

2015

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Enhancement of localization and confinement effects in quaternary group-III nitride multi-quantum wells on SiC substrate

Physica status solidi. A, Applications and materials science, 2005-03, Vol.202 (4), p.642-646

2005

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Electrical transport properties of highly doped N-type GaN materials

Pressure-induced penetration of guest molecules in high-silica zeolites: the case of mordenite

Growth of GaN:Mg crystals by high nitrogen pressure solution method in multi-feed–seed configuration

High Temperature Annealing of MBE-grown Mg-doped GaN

Optical investigations and strain effect in AlGaN/GaN epitaxial layers

Coexistence of free holes and electrons in InN:Mg with In- and N-growth polarities

Pressure tuning of the morphotropic phase boundary in piezoelectric lead zirconate titanate

Advantage of In- over N-polarity for disclosure of p-type conduction in InN:Mg

Pressure studies of multicarrier conduction in undoped InN grown on GaN buffer

The influence of free-carrier concentration on the PEC etching of GaN: A calibration with Raman spectroscopy

High temperature behaviour of AlGaN/AlN/GaN Hall-FET sensors

p-type conductivity in GaN:Zn monocrystals grown by ammonothermal method

Resonant localized donor state above the conduction band minimum in InN

Kinetics of low-temperature activation of acceptors in magnesium-doped gallium nitride epilayers grown by metal-organic vapor-phase epitaxy

Parallel conduction in p-type gallium nitride homo-structures

Transport measurements on InAs/GaSb superlattice structures for mid-infrared photodiode

Investigation of AlGaN∕AlN∕GaN heterostructures for magnetic sensor application from liquid helium temperature to 300°C

Temperature dependence of electrical properties of gallium-nitride bulk single crystals doped with Mg and their evolution with annealing

High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials

Unambiguous determination of carrier concentration and mobility for InAs/GaSb superlattice photodiode optimization

Time-resolved spectroscopy of (Al,Ga,In)N based quantum wells: Localization effects and effective reduction of internal electric fields

Electrical properties of short period InAs/GaSb superlattice

Pressure-induced penetration of guest molecules in high-silica zeolites: the case of mordeniteElectronic supplementary information (ESI) available: Atomic coordinates, bond distances, and X-ray diffraction patterns. See DOI: 10.1039/c5cp03561a

High-pressure polymorph of LuFe2O4 with room-temperature antiferromagnetic order

Enhancement of localization and confinement effects in quaternary group-III nitride multi-quantum wells on SiC substrate

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