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Geometric spin echo under zero field

Nature communications, 2016-05, Vol.7 (1), p.11668-11668, Article 11668

2016

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1-Mbit 3-D DRAM Using a Monolithically Stacked Structure of a Si CMOS and Heterogeneous IGZO FETs

IEEE journal of the Electron Devices Society, 2024, Vol.12, p.236-242

2024

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OLED Microdisplay With Monolithically Integrated CAAC-OS FET and Si CMOS Achieved By Two-Dimensionally Arranged Silicon Display Drivers

IEEE journal of the Electron Devices Society, 2024-01, Vol.12, p.1-1

2024

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Preparation of nanocrystalline cubic silicon carbide thin films by hot-wire CVD at various filament-to-substrate distances

Surface & coatings technology, 2007-09, Vol.201 (22), p.8986-8990

2007

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Influence of gas pressure on low-temperature preparation and film properties of nanocrystalline 3C-SiC thin films by HW-CVD using SiH4/CH4/H2 system

Thin solid films, 2008-01, Vol.516 (5), p.633-636

2008

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Growth of silicon carbide thin films by hot-wire chemical vapor deposition from SiH4/CH4/H2

Thin solid films, 2009-04, Vol.517 (12), p.3516-3519

2009

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Dynamical Decoupling of a Geometric Qubit

Physical review applied, 2019-11, Vol.12 (5), Article 051001

2019

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Demonstration of scaling and monolithic stacking for higher integration of integrated circuit using c-axis aligned crystalline oxide semiconductor FET

Japanese Journal of Applied Physics, 2024-05, Vol.63 (5), p.51003

2024

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P‐151: Late‐News Poster: 1.5‐inch, 3207‐ppi Foveated Display with OLED/OS/Si Structure Capable of 32‐Division Control of Resolution and Frame Rate

SID International Symposium Digest of technical papers, 2023-06, Vol.54 (1), p.1641-1644

2023

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Recording of "Theme and Variations Based on Etenraku" (piano solo transcription) by Yoritsune Matsudaira

Komura, Yusuke

2016

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Importance of H2 gas for growth of hot-wire CVD nanocrystalline 3C-SiC from SiH4/CH4/H2

Thin solid films, 2009-04, Vol.517 (12), p.3520-3523

2009

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32‐3: 1.5‐inch, 3207‐ppi Side‐by‐Side OLED Display Capable of 32‐Division Driving with OSLSI/SiLSI Structure Fabricated by Photolithography

SID International Symposium Digest of technical papers, 2022-06, Vol.53 (1), p.384-387

2022

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Two-Dimensionally Arranged Display Drivers Achieved by OS/Si Structure

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023, p.1-2

2023

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Importance of H 2 gas for growth of hot-wire CVD nanocrystalline 3C-SiC from SiH 4/CH 4/H 2

Thin solid films, 2009, Vol.517 (12), p.3520-3523

2009

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Growth of silicon carbide thin films by hot-wire chemical vapor deposition from SiH 4/CH 4/H 2

Thin solid films, 2009, Vol.517 (12), p.3516-3519

2009

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Influence of gas pressure on low-temperature preparation and film properties of nanocrystalline 3C-SiC thin films by HW-CVD using SiH 4/CH 4/H 2 system

Thin solid films, 2008, Vol.516 (5), p.633-636

2008

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Properties of Nanocrystalline Cubic Silicon Carbide Thin Films Prepared by Hot-Wire Chemical Vapor Deposition Using SiH 4 /CH 4 /H 2 at Various Substrate Temperatures

Japanese Journal of Applied Physics, 2008-01, Vol.47 (1S), p.561

2008

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Heterogeneous Oxide Semiconductor FETs Comprising Planar FET and Vertical Channel FETs Monolithically Stacked on Si CMOS, Enabling 1-Mbit 3D DRAM

2024 IEEE International Memory Workshop (IMW), 2024, p.1-4

2024

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Film Properties of Nanocrystalline 3C–SiC Thin Films Deposited on Glass Substrates by Hot-Wire Chemical Vapor Deposition Using CH 4 as a Carbon Source

Japanese Journal of Applied Physics, 2007-01, Vol.46 (1R), p.45

2007

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Preparation of Nanocrystalline Silicon Carbide Thin Films by Hot-Wire Chemical Vapor Deposition at Various Filament Temperature

2006 IEEE 4th World Conference on Photovoltaic Energy Conference, 2006, Vol.2, p.1650-1652

2006

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Increased BUB1B/BUBR1 expression contributes to aberrant DNA repair activity leading to resistance to DNA-damaging agents

Oncogene, 2021-10, Vol.40 (43), p.6210-6222

2021

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Spontaneous regression of dasatinib-related primary effusion lymphoma-like lymphoma

International journal of hematology, 2023-01, Vol.117 (1), p.137-142

2023

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An Unbalanced Diet Limited to the Consumption of Boiled Vegetables Led to the Onset of Scurvy

Internal Medicine, 2022/06/01, Vol.61(11), pp.1795-1798

2022

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Impact of grip strength and gait speed on exercise tolerance in patients with pulmonary hypertension without left heart disease

Heart and vessels, 2022-11, Vol.37 (11), p.1928-1936

2022

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Randomized controlled trial of landiolol, a short-acting beta-1 adrenergic receptor blocker, illustrating changes in high-molecular weight adiponectin levels after elective percutaneous coronary intervention

Heart and vessels, 2020-11, Vol.35 (11), p.1510-1517

2020

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Geometric spin echo under zero field

1-Mbit 3-D DRAM Using a Monolithically Stacked Structure of a Si CMOS and Heterogeneous IGZO FETs

OLED Microdisplay With Monolithically Integrated CAAC-OS FET and Si CMOS Achieved By Two-Dimensionally Arranged Silicon Display Drivers

Preparation of nanocrystalline cubic silicon carbide thin films by hot-wire CVD at various filament-to-substrate distances

Influence of gas pressure on low-temperature preparation and film properties of nanocrystalline 3C-SiC thin films by HW-CVD using SiH4/CH4/H2 system

Growth of silicon carbide thin films by hot-wire chemical vapor deposition from SiH4/CH4/H2

Dynamical Decoupling of a Geometric Qubit

Demonstration of scaling and monolithic stacking for higher integration of integrated circuit using c-axis aligned crystalline oxide semiconductor FET

P‐151: Late‐News Poster: 1.5‐inch, 3207‐ppi Foveated Display with OLED/OS/Si Structure Capable of 32‐Division Control of Resolution and Frame Rate

Recording of "Theme and Variations Based on Etenraku" (piano solo transcription) by Yoritsune Matsudaira

Importance of H2 gas for growth of hot-wire CVD nanocrystalline 3C-SiC from SiH4/CH4/H2

32‐3: 1.5‐inch, 3207‐ppi Side‐by‐Side OLED Display Capable of 32‐Division Driving with OSLSI/SiLSI Structure Fabricated by Photolithography

Two-Dimensionally Arranged Display Drivers Achieved by OS/Si Structure

Importance of H 2 gas for growth of hot-wire CVD nanocrystalline 3C-SiC from SiH 4/CH 4/H 2

Growth of silicon carbide thin films by hot-wire chemical vapor deposition from SiH 4/CH 4/H 2

Influence of gas pressure on low-temperature preparation and film properties of nanocrystalline 3C-SiC thin films by HW-CVD using SiH 4/CH 4/H 2 system

Properties of Nanocrystalline Cubic Silicon Carbide Thin Films Prepared by Hot-Wire Chemical Vapor Deposition Using SiH 4 /CH 4 /H 2 at Various Substrate Temperatures

Heterogeneous Oxide Semiconductor FETs Comprising Planar FET and Vertical Channel FETs Monolithically Stacked on Si CMOS, Enabling 1-Mbit 3D DRAM

Film Properties of Nanocrystalline 3C–SiC Thin Films Deposited on Glass Substrates by Hot-Wire Chemical Vapor Deposition Using CH 4 as a Carbon Source

Preparation of Nanocrystalline Silicon Carbide Thin Films by Hot-Wire Chemical Vapor Deposition at Various Filament Temperature

Increased BUB1B/BUBR1 expression contributes to aberrant DNA repair activity leading to resistance to DNA-damaging agents

Spontaneous regression of dasatinib-related primary effusion lymphoma-like lymphoma

An Unbalanced Diet Limited to the Consumption of Boiled Vegetables Led to the Onset of Scurvy

Impact of grip strength and gait speed on exercise tolerance in patients with pulmonary hypertension without left heart disease

Randomized controlled trial of landiolol, a short-acting beta-1 adrenergic receptor blocker, illustrating changes in high-molecular weight adiponectin levels after elective percutaneous coronary intervention

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