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Use of baby food products during the complementary feeding period: What factors drive parents' choice of products?

Maternal and child nutrition, 2024-06, Vol.20 (4), p.e13689

2024

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Differences in parental feeding styles and practices and toddler eating behaviour across complementary feeding methods: Managing expectations through consideration of effect size

Appetite, 2019-06, Vol.137, p.198-206

2019

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Silicon micropillars: high stress plasticity

Physica status solidi. C, 2013-01, Vol.10 (1), p.11-15

2013

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Dislocations in 4H- and 3C-SiC single crystals in the brittle regime

Physica status solidi. C, 2013-01, Vol.10 (1), p.64-67

2013

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The impact of maternal eating behaviour, infant temperament, and mother-infant interactions on vegetable feeding outcomes

Appetite, 2018-04, Vol.123, p.452-452

2018

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Evaluation of residual strain in directional solidified mono-Si ingots

Physica status solidi. C, 2013-01, Vol.10 (1), p.141-145

2013

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ZnO nanoparticle formation in Zn+ ion implanted SiO2/Si structure

Physica status solidi. C, 2013-01, Vol.10 (1), p.48-51

2013

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Comparative study of extended free-volume defects in As- and Ge-based glassy semiconductors: theoretical prediction and experimental probing with PAL technique

Physica status solidi. C, 2013-01, Vol.10 (1), p.117-120

2013

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Dissociation of the 60° basal dislocation in wurtzite GaN

Physica status solidi. C, 2013-01, Vol.10 (1), p.84-88

2013

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Concentration quenching and thermal activation of the luminescence from terbium-doped a -SiC:H and c -AlN thin films

Physica status solidi. C, 2013-01, Vol.10 (1), p.68-71

2013

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Electrons on dislocations

Physica status solidi. C, 2013-01, Vol.10 (1), p.40-43

2013

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How to describe concentration quenching in rare earth doped semiconductors

Physica status solidi. C, 2013-01, Vol.10 (1), p.109-112

2013

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Destruction-polymerization transformations as a source of radiation-induced extended defects in chalcogenide glassy semiconductors

Physica status solidi. C, 2013-01, Vol.10 (1), p.125-128

2013

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Extended deep-level defects in MBE-grown p-type CdTe layers

Physica status solidi. C, 2013-01, Vol.10 (1), p.113-116

2013

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Electrical characteristics of ALD-deposited Al2O3 thin films on p-type germanium substrates

Physica status solidi. C, 2013-01, Vol.10 (1), p.137-140

2013

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Positron annihilation lifetime study of extended defects in semiconductor glasses and polymers

Physica status solidi. C, 2013-01, Vol.10 (1), p.121-124

2013

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Characterization of high quality Cu(In,Ga)Se 2 thin films prepared by rf‐magnetron sputtering

Physica status solidi. C, 2013, Vol.10 (1), p.129-132

2013

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A quantum dot nucleated on the edge of a threading dislocation: elastic and electric field effects

Physica status solidi. C, 2013-01, Vol.10 (1), p.97-100

2013

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Mechanical stress control in GaN films on sapphire substrate via patterned nanocolumn interlayer formation

Physica status solidi. C, 2013-01, Vol.10 (1), p.89-92

2013

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High-resolution Scanning Transmission EBIC Analysis of Misfit Dislocations at Perovskite pn-Heterojunctions

Journal of physics. Conference series, 2019-05, Vol.1190 (1), p.12009

2019

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Propagation of stacking faults from "composite" dislocation cores at low temperature in silicon nanostructures

Journal of physics. Conference series, 2019-05, Vol.1190 (1), p.12007

2019

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Dislocation formation during laser processing of silicon solar cell materials

Physica status solidi. C, 2013-01, Vol.10 (1), p.28-31

2013

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Influence of Ga doping on the microstructure of 3C-SiC layers grown on 4H-SiC substrates by VLS mechanism

Physica status solidi. C, 2013-01, Vol.10 (1), p.72-75

2013

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Impact of hydrogen on electrical levels and luminescence of dislocation network at the interface of hydrophilically bonded silicon wafers

Physica status solidi. C, 2013-01, Vol.10 (1), p.36-39

2013

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On the applicability of elastic model to very thin crystalline layers

Journal of physics. Conference series, 2019-05, Vol.1190 (1), p.12017

2019

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Use of baby food products during the complementary feeding period: What factors drive parents' choice of products?

Differences in parental feeding styles and practices and toddler eating behaviour across complementary feeding methods: Managing expectations through consideration of effect size

Silicon micropillars: high stress plasticity

Dislocations in 4H- and 3C-SiC single crystals in the brittle regime

The impact of maternal eating behaviour, infant temperament, and mother-infant interactions on vegetable feeding outcomes

Evaluation of residual strain in directional solidified mono-Si ingots

ZnO nanoparticle formation in Zn+ ion implanted SiO2/Si structure

Comparative study of extended free-volume defects in As- and Ge-based glassy semiconductors: theoretical prediction and experimental probing with PAL technique

Dissociation of the 60° basal dislocation in wurtzite GaN

Concentration quenching and thermal activation of the luminescence from terbium-doped a -SiC:H and c -AlN thin films

Electrons on dislocations

How to describe concentration quenching in rare earth doped semiconductors

Destruction-polymerization transformations as a source of radiation-induced extended defects in chalcogenide glassy semiconductors

Extended deep-level defects in MBE-grown p-type CdTe layers

Electrical characteristics of ALD-deposited Al2O3 thin films on p-type germanium substrates

Positron annihilation lifetime study of extended defects in semiconductor glasses and polymers

Characterization of high quality Cu(In,Ga)Se 2 thin films prepared by rf‐magnetron sputtering

A quantum dot nucleated on the edge of a threading dislocation: elastic and electric field effects

Mechanical stress control in GaN films on sapphire substrate via patterned nanocolumn interlayer formation

High-resolution Scanning Transmission EBIC Analysis of Misfit Dislocations at Perovskite pn-Heterojunctions

Propagation of stacking faults from "composite" dislocation cores at low temperature in silicon nanostructures

Dislocation formation during laser processing of silicon solar cell materials

Influence of Ga doping on the microstructure of 3C-SiC layers grown on 4H-SiC substrates by VLS mechanism

Impact of hydrogen on electrical levels and luminescence of dislocation network at the interface of hydrophilically bonded silicon wafers

On the applicability of elastic model to very thin crystalline layers

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