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Infrared Photoreflectance of III–V Semiconductor Materials (Review)

Physics of the solid state, 2021-08, Vol.63 (8), p.1181-1204

Komkov, O. S.

2021

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Molecular Beam Epitaxy of Mixed h-GaTe/m-GaTe Thin Films on GaAs(001) Substrates: Structural and Photoluminescence Properties

Journal of experimental and theoretical physics, 2022-12, Vol.135 (6), p.853-859

2022

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Radiative versus non-radiative recombination in high-efficiency mid-IR InSb/InAs/In(Ga,Al)As/GaAs metamorphic nanoheterostructures

Journal of physics. D, Applied physics, 2018-01, Vol.51 (5), p.55106

2018

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Investigation of Built-in Electric Fields at the GaSe/GaAs Interface by Photoreflectance Spectroscopy

Semiconductors (Woodbury, N.Y.), 2020-10, Vol.54 (10), p.1198-1204

2020

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Photomodulation Optical Spectroscopy of CdHgTe Graded Band Gap Heterostructures

Semiconductors (Woodbury, N.Y.), 2024-05, Vol.58 (5), p.422-428

2024

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Photoluminescence of Arsenic Doped Epitaxial Films of Cd0.3Hg0.7Te

Semiconductors (Woodbury, N.Y.), 2024-04, Vol.58 (4), p.345-348

2024

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Characterization of In(Ga,Al)As/GaAs metamorphic heterostructures for mid-IR emitters by FTIR photoreflectance spectroscopy

Journal of physics. Conference series, 2021-12, Vol.2086 (1), p.12140

2021

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Erratum to: Photoluminescence of Arsenic Doped Epitaxial Films of Cd0.3Hg0.7Te

Semiconductors (Woodbury, N.Y.), 2024, Vol.58 (6), p.545-545

2024

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Infrared photoreflectance of InSb-based two-dimensional nanostructures

Journal of the Optical Society of America. B, Optical physics, 2019-04, Vol.36 (4), p.910

2019

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Temperature-dependent photoluminescence of InSb/InAs nanostructures with InSb thickness in the above-monolayer range

Journal of physics. D, Applied physics, 2016-07, Vol.49 (28), p.285108

2016

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Infrared photoluminescence spectra measurements using boxcar integrator in the active baseline subtraction mode

Journal of physics. Conference series, 2019-11, Vol.1400 (6), p.66035

2019

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Interpretation of photoluminescence spectra of metamorphic InAlAs/GaAs heterostructures

Journal of physics. Conference series, 2019-12, Vol.1410 (1), p.12167

2019

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Investigation of infrared photoluminescence spectra of Ge1-x-ySixSny/Si nanostructures

Journal of physics. Conference series, 2022, Vol.2227 (1), p.012009

2022

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Finding the Wedge-Shaped Au Nanoclusters at the Surface of GaAs and Investigating Them with the Polarization Spectroscopy of Plasmons

Semiconductors (Woodbury, N.Y.), 2024-04, Vol.58 (4), p.295-301

2024

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Investigation of GaAs/AlGaAs superlattice by photoreflectance method

Journal of physics. Conference series, 2018-06, Vol.1038 (1), p.12124

2018

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Contactless characterization of manganese and carbon delta-layers in gallium arsenide

Semiconductors (Woodbury, N.Y.), 2017-11, Vol.51 (11), p.1420-1426

2017

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Structural and optical properties of quasi-2D GaTe layers grown by molecular beam epitaxy on GaAs (001) substrates

Journal of physics. Conference series, 2020-12, Vol.1697 (1), p.12131

2020

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Measurement of Infrared Photoluminescence Spectra by Gated Integration with Active Baseline Subtraction

Optics and spectroscopy, 2020, Vol.128 (1), p.131-136

2020

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Effect of Strongly Mismatched GaAs and InAs Inserts in a InAlAs Buffer Layer on the Structural and Optical Properties of Metamorphic InAs(Sb)/InGaAs/InAlAs/GaAs Quantum-Confined Heterostructures

JETP letters, 2019-03, Vol.109 (6), p.377-381

2019

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Evaluation of nitrogen incorporation into bulk 4H-SiC grown on seeds of different orientation from optical absorption spectra

Journal of physics. Conference series, 2016-08, Vol.741 (1), p.12043

2016

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Photomodulation fourier transform infrared spectroscopy of semiconductor structures: Features of phase correction and application of method

Technical physics letters, 2013-12, Vol.39 (12), p.1071-1073

2013

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Structural and Optical Properties of a Hybrid Material Based on Tin Oxides and Multilayer Periodic Structures with Pseudomorphic GeSiSn Layers

Russian physics journal, 2021-12, Vol.64 (8), p.1505-1512

2021

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Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

Progress in crystal growth and characterization of materials, 2019-02, Vol.65 (1), p.20-35

2019

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FTIR photoreflectance of narrow-gap heterostructures based on AlxIn1-xSb alloys

Journal of physics. Conference series, 2017, Vol.917 (6)

2017

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Photoreflectance of indium antimonide

Physics of the solid state, 2016-12, Vol.58 (12), p.2394-2400

2016

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Infrared Photoreflectance of III–V Semiconductor Materials (Review)

Molecular Beam Epitaxy of Mixed h-GaTe/m-GaTe Thin Films on GaAs(001) Substrates: Structural and Photoluminescence Properties

Radiative versus non-radiative recombination in high-efficiency mid-IR InSb/InAs/In(Ga,Al)As/GaAs metamorphic nanoheterostructures

Investigation of Built-in Electric Fields at the GaSe/GaAs Interface by Photoreflectance Spectroscopy

Photomodulation Optical Spectroscopy of CdHgTe Graded Band Gap Heterostructures

Photoluminescence of Arsenic Doped Epitaxial Films of Cd0.3Hg0.7Te

Characterization of In(Ga,Al)As/GaAs metamorphic heterostructures for mid-IR emitters by FTIR photoreflectance spectroscopy

Erratum to: Photoluminescence of Arsenic Doped Epitaxial Films of Cd0.3Hg0.7Te

Infrared photoreflectance of InSb-based two-dimensional nanostructures

Temperature-dependent photoluminescence of InSb/InAs nanostructures with InSb thickness in the above-monolayer range

Infrared photoluminescence spectra measurements using boxcar integrator in the active baseline subtraction mode

Interpretation of photoluminescence spectra of metamorphic InAlAs/GaAs heterostructures

Investigation of infrared photoluminescence spectra of Ge1-x-ySixSny/Si nanostructures

Finding the Wedge-Shaped Au Nanoclusters at the Surface of GaAs and Investigating Them with the Polarization Spectroscopy of Plasmons

Investigation of GaAs/AlGaAs superlattice by photoreflectance method

Contactless characterization of manganese and carbon delta-layers in gallium arsenide

Structural and optical properties of quasi-2D GaTe layers grown by molecular beam epitaxy on GaAs (001) substrates

Measurement of Infrared Photoluminescence Spectra by Gated Integration with Active Baseline Subtraction

Effect of Strongly Mismatched GaAs and InAs Inserts in a InAlAs Buffer Layer on the Structural and Optical Properties of Metamorphic InAs(Sb)/InGaAs/InAlAs/GaAs Quantum-Confined Heterostructures

Evaluation of nitrogen incorporation into bulk 4H-SiC grown on seeds of different orientation from optical absorption spectra

Photomodulation fourier transform infrared spectroscopy of semiconductor structures: Features of phase correction and application of method

Structural and Optical Properties of a Hybrid Material Based on Tin Oxides and Multilayer Periodic Structures with Pseudomorphic GeSiSn Layers

Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

FTIR photoreflectance of narrow-gap heterostructures based on AlxIn1-xSb alloys

Photoreflectance of indium antimonide

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