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Cryptic diversity in Indo-Pacific coral-reef fishes revealed by DNA-barcoding provides new support to the centre-of-overlap hypothesis

PloS one, 2012-03, Vol.7 (3), p.e28987-e28987

2012

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Metalorganic vapor phase epitaxy using organic group V precursors

Journal of crystal growth, 1994-12, Vol.145 (1), p.468-472

Komeno, J.

1994

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The growth of GaAs, AlGaAs, and selectively doped AlGaAs/GaAs heterostructures by metalorganic vapor phase epitaxy using tertiarybutylarsine

Journal of applied physics, 1990-06, Vol.67 (12), p.7576-7582

1990

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Effect of threading dislocations on mobility in selectively doped heterostructures grown on Si substrates

Journal of applied physics, 1994-04, Vol.75 (7), p.3681-3683

1994

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A DTV reception technology using software data streaming on a personal computer

IEEE transactions on consumer electronics, 1999-08, Vol.45 (3), p.716-723

1999

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Large Area and Highly Uniform MOVPE Growth for AlGaAs / GaAs HEMT LSIs

Journal of the Electrochemical Society, 1993-08, Vol.140 (8), p.2432-2438

1993

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Differences in Si doping efficiency in tertiarybutylarsine, monoethylarsine and arsine for GaAs and AlGaAs grown by MOVPE

Journal of electronic materials, 1992-03, Vol.21 (3), p.305-315

1992

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Generation of strong composition-modulated structures and absence of ordered structures in InGaP crystals grown on (110) GaAs substrates by metalorganic chemical vapor deposition

Applied physics letters, 1989-06, Vol.54 (23), p.2312-2314

1989

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Effect of strained InGaAs step bunching on mobility and device performance in n-InGaP/InGaAs/GaAs pseudomorphic heterostructures grown by metalorganic vapor phase epitaxy

Journal of crystal growth, 1994-12, Vol.145 (1), p.799-807

1994

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Pseudomorphic n-InGaP/InGaAs/GaAs grown by MOVPE for HEMT LSIs

Journal of crystal growth, 1991, Vol.107 (1), p.942-946

1991

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Transmission electron microscopic observation of InGaP crystals grown on (001)GaAs substrates by metalorganic chemical vapor deposition

Journal of crystal growth, 1988, Vol.93 (1-4), p.418-425

1988

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Photoionization of deep traps in AlGaAs/GaAs quantum wells

Journal of applied physics, 1989-05, Vol.65 (10), p.3937-3942

1989

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Chemical beam epitaxy selectively-regrown n +-GaAs layer on metalorganic chemical vapor deposition grown GaInP/GaInAs/GaAs pseudomorphic high electron mobility transistor structure

Journal of crystal growth, 1994-03, Vol.136 (1), p.261-267

1994

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Effective Si planar doping of GaAs by MOVPE using tertiarybutylarsine

Journal of crystal growth, 1991-12, Vol.115 (1), p.448-454

1991

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MOVPE growth of uniform AlGaAs and InGaAs using organoarsine with inverted-horizontal atmospheric-pressure reactor

Journal of crystal growth, 1991, Vol.107 (1), p.370-375

1991

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Hot electron scattering mechanisms in AlGaAs/GaAs/AlGaAs quantum wells

Semiconductor science and technology, 1992-03, Vol.7 (3B), p.B248-B250, Article B248

1992

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Growth temperature dependence of EL2 concentration in GaAs grown by metalorganic vapor-phase epitaxy using tertiarybutylarsine

Journal of applied physics, 1990-10, Vol.68 (8), p.4064-4067

1990

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Numerical analysis of heterointerface in AlGaAs/GaAs hemt structure grown by MOVPE

Journal of crystal growth, 1988, Vol.93 (1-4), p.900-904

1988

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Uniform and abrupt InGaP/GaAs selectively doped heterostructures grown by MOVPE for HEMT ICs

Journal of crystal growth, 1988, Vol.93 (1-4), p.905-910

1988

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Semi-insulator-embedded InGaAsP/InP flat-surface buried heterostructure laser

Applied physics letters, 1985-12, Vol.47 (11), p.1127-1129

1985

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Two-dimensional electron gas in a selectively doped InP/In0.53 Ga0.47As heterostructure grown by chloride transport vapor phase epitaxy

Applied physics letters, 1983-08, Vol.43 (3), p.280-282

1983

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Recent progress in MOVPE for HEMT LSIs

Journal of crystal growth, 1990-10, Vol.105 (1), p.30-34

1990

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TDEG in In0.53Ga0.47As-InP heterojunction grown by chloride VPE

Electronics letters, 1983, Vol.19 (13), p.473

1983

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The growth of a GaAs VPE layer with an abrupt doping profile

Applied physics letters, 1979-11, Vol.35 (9), p.693-695

1979

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Selectively doped n+ InP/n− GaInAs heterostructure prepared using chloride transport vapour-phase epitaxy

Electronics letters, 1984-03, Vol.20 (7), p.306

1984

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Cryptic diversity in Indo-Pacific coral-reef fishes revealed by DNA-barcoding provides new support to the centre-of-overlap hypothesis

Metalorganic vapor phase epitaxy using organic group V precursors

The growth of GaAs, AlGaAs, and selectively doped AlGaAs/GaAs heterostructures by metalorganic vapor phase epitaxy using tertiarybutylarsine

Effect of threading dislocations on mobility in selectively doped heterostructures grown on Si substrates

A DTV reception technology using software data streaming on a personal computer

Large Area and Highly Uniform MOVPE Growth for AlGaAs / GaAs HEMT LSIs

Differences in Si doping efficiency in tertiarybutylarsine, monoethylarsine and arsine for GaAs and AlGaAs grown by MOVPE

Generation of strong composition-modulated structures and absence of ordered structures in InGaP crystals grown on (110) GaAs substrates by metalorganic chemical vapor deposition

Effect of strained InGaAs step bunching on mobility and device performance in n-InGaP/InGaAs/GaAs pseudomorphic heterostructures grown by metalorganic vapor phase epitaxy

Pseudomorphic n-InGaP/InGaAs/GaAs grown by MOVPE for HEMT LSIs

Transmission electron microscopic observation of InGaP crystals grown on (001)GaAs substrates by metalorganic chemical vapor deposition

Photoionization of deep traps in AlGaAs/GaAs quantum wells

Chemical beam epitaxy selectively-regrown n +-GaAs layer on metalorganic chemical vapor deposition grown GaInP/GaInAs/GaAs pseudomorphic high electron mobility transistor structure

Effective Si planar doping of GaAs by MOVPE using tertiarybutylarsine

MOVPE growth of uniform AlGaAs and InGaAs using organoarsine with inverted-horizontal atmospheric-pressure reactor

Hot electron scattering mechanisms in AlGaAs/GaAs/AlGaAs quantum wells

Growth temperature dependence of EL2 concentration in GaAs grown by metalorganic vapor-phase epitaxy using tertiarybutylarsine

Numerical analysis of heterointerface in AlGaAs/GaAs hemt structure grown by MOVPE

Uniform and abrupt InGaP/GaAs selectively doped heterostructures grown by MOVPE for HEMT ICs

Semi-insulator-embedded InGaAsP/InP flat-surface buried heterostructure laser

Two-dimensional electron gas in a selectively doped InP/In0.53 Ga0.47As heterostructure grown by chloride transport vapor phase epitaxy

Recent progress in MOVPE for HEMT LSIs

TDEG in In0.53Ga0.47As-InP heterojunction grown by chloride VPE

The growth of a GaAs VPE layer with an abrupt doping profile

Selectively doped n+ InP/n− GaInAs heterostructure prepared using chloride transport vapour-phase epitaxy

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