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Van der Waals epitaxy—a new epitaxial growth method for a highly lattice-mismatched system

Thin solid films, 1992-08, Vol.216 (1), p.72-76

Koma, Atsushi

1992

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Van der Waals epitaxy for highly lattice-mismatched systems

Journal of crystal growth, 1999-05, Vol.201, p.236-241

Koma, Atsushi

1999

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Preparation and characterization of vanadyl-phthalocyanine ultrathin films grown on KBr and KCl by molecular beam epitaxy

Japanese Journal of Applied Physics, 1991-02, Vol.30 (2B), p.L306-L308

1991

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Two types of epitaxial orientations for the growth of alkali halide on fcc metal substrates

Physical review. B, Condensed matter, 2002-10, Vol.66 (15), Article 155424

2002

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Ultraviolet photoelectron spectroscopy of a methyl-terminated Si [formula omitted] surface

Surface science, 2003-02, Vol.526 (1), p.177-183

2003

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Metal-induced gap states at well defined alkali-halide/metal interfaces

Physical review letters, 2003-05, Vol.90 (19), p.196803-196803, Article 196803

2003

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Preparation and magnetic properties of manganese(II) phthalocyanine thin films

The Journal of chemical physics, 1998-06, Vol.108 (24), p.10256-10261

1998

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Fabrication of GaAs Quantum Dots on a Bilayer-GaSe Terminated Si(111) Substrate

Japanese Journal of Applied Physics, 2001, Vol.40 (3S), p.1888-1891

2001

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New epitaxial growth method for modulated structures using Van der Waals interactions

Surface science, 1992, Vol.267 (1), p.29-33

Koma, Atsushi

1992

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Visible light photoemission and negative electron affinity of single-crystalline CsCl thin films

Surface science, 2003-10, Vol.544 (2), p.220-226

2003

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Heteroepitaxy of Layered Semiconductor GaSe on a GaAs(111)B Surface

Japanese Journal of Applied Physics, 1991-08, Vol.30 (8A), p.L1352

1991

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Heteroepitaxial growth of layered semiconductor GaSe on a hydrogen-terminated Si(111) surface

Japanese Journal of Applied Physics, 1993-03, Vol.32 (3B), p.L434-L437

1993

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Band Structure and Molecular Orientation of Ultrathin Epitaxial Films of Squaric Acid

The journal of physical chemistry. B, 2004-04, Vol.108 (17), p.5329-5332

2004

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Dynamic and Static Disorder of Alkali Halide Solid Solutions studied by Temperature-dependent Extended X-Ray-Absorption Fine Structure

Journal of the Physical Society of Japan, 2002-04, Vol.71 (4), p.1076-1082

2002

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Atomic and electronic structure of CsBr film grown on LiF and KBr( [formula omitted])

Surface science, 2003-01, Vol.523 (1), p.73-79

2003

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Investigation of the growth mechanism of an InSe epitaxial layer on a MoS2 substrate

Journal of crystal growth, 2000-10, Vol.219 (1-2), p.115-122

2000

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Scanning Tunneling Microscopy and Spectroscopy Study of LiBr/Si(001) Heterostructure

Japanese Journal of Applied Physics, 2004-02, Vol.43 (No. 2A), p.L203-L205

2004

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Highly sensitive reflection high-energy electron diffraction measurement by use of micro-channel imaging plate

Review of scientific instruments, 2000-09, Vol.71 (9), p.3478-3479

2000

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Growth and In situ Characterization of Two Dimensional Layered Materials

Vacuum and Surface Science, 2019-10, Vol.62 (10), p.591-591

KOMA, Atsushi

2019

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Epitaxial growth of vanadyl-phthalocyanine ultrathin films on hydrogen-terminated Si(111) surfaces

Applied physics letters, 1992-10, Vol.61 (17), p.2021-2023

1992

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Characterization of epitaxial films of layered materials using Moiré images of scanning tunneling microscope

Japanese Journal of Applied Physics, 1993-06, Vol.32 (6B), p.2945-2949

1993

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Growth of polar NaCl(111) surface on GaAs(lll) substrates

Japanese Journal of Applied Physics, 1997-01, Vol.36 (1AB), p.L55-L57

1997

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Alternate heteroepitaxial growth of vanadyl- and chloroaluminum-phthalocyanines on KBr and KCl

Journal of applied physics, 1993-03, Vol.73 (5), p.2207-2214

1993

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Heteroepitaxial growth of layered GaSe films on GaAs(001) surfaces

Japanese Journal of Applied Physics, 1993-10, Vol.32 (10A), p.L1444-L1447

1993

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Investigation of the growth mechanism of layered semiconductor GaSe

Applied surface science, 1997-04, Vol.113, p.38-42

1997

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Van der Waals epitaxy—a new epitaxial growth method for a highly lattice-mismatched system

Van der Waals epitaxy for highly lattice-mismatched systems

Preparation and characterization of vanadyl-phthalocyanine ultrathin films grown on KBr and KCl by molecular beam epitaxy

Two types of epitaxial orientations for the growth of alkali halide on fcc metal substrates

Ultraviolet photoelectron spectroscopy of a methyl-terminated Si [formula omitted] surface

Metal-induced gap states at well defined alkali-halide/metal interfaces

Preparation and magnetic properties of manganese(II) phthalocyanine thin films

Fabrication of GaAs Quantum Dots on a Bilayer-GaSe Terminated Si(111) Substrate

New epitaxial growth method for modulated structures using Van der Waals interactions

Visible light photoemission and negative electron affinity of single-crystalline CsCl thin films

Heteroepitaxy of Layered Semiconductor GaSe on a GaAs(111)B Surface

Heteroepitaxial growth of layered semiconductor GaSe on a hydrogen-terminated Si(111) surface

Band Structure and Molecular Orientation of Ultrathin Epitaxial Films of Squaric Acid

Dynamic and Static Disorder of Alkali Halide Solid Solutions studied by Temperature-dependent Extended X-Ray-Absorption Fine Structure

Atomic and electronic structure of CsBr film grown on LiF and KBr( [formula omitted])

Investigation of the growth mechanism of an InSe epitaxial layer on a MoS2 substrate

Scanning Tunneling Microscopy and Spectroscopy Study of LiBr/Si(001) Heterostructure

Highly sensitive reflection high-energy electron diffraction measurement by use of micro-channel imaging plate

Growth and In situ Characterization of Two Dimensional Layered Materials

Epitaxial growth of vanadyl-phthalocyanine ultrathin films on hydrogen-terminated Si(111) surfaces

Characterization of epitaxial films of layered materials using Moiré images of scanning tunneling microscope

Growth of polar NaCl(111) surface on GaAs(lll) substrates

Alternate heteroepitaxial growth of vanadyl- and chloroaluminum-phthalocyanines on KBr and KCl

Heteroepitaxial growth of layered GaSe films on GaAs(001) surfaces

Investigation of the growth mechanism of layered semiconductor GaSe

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