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Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy

Applied physics letters, 2013-07, Vol.103 (4)

2013

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Infrared electroluminescence from GeSn heterojunction diodes grown by molecular beam epitaxy

Applied physics letters, 2013-06, Vol.102 (25)

2013

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Enhanced photoluminescence of GeSn by strain relaxation and spontaneous carrier confinement through rapid thermal annealing

Journal of alloys and compounds, 2022-09, Vol.915, p.165453, Article 165453

2022

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Photoconductivity of germanium tin alloys grown by molecular beam epitaxy

Applied physics letters, 2013-04, Vol.102 (14)

2013

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Tetrasilane and digermane for the ultra-high vacuum chemical vapor deposition of SiGe alloys

Thin solid films, 2016-04, Vol.604, p.23-27

2016

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Silicon epitaxy using tetrasilane at low temperatures in ultra-high vacuum chemical vapor deposition

Journal of crystal growth, 2016-06, Vol.444, p.21-27

2016

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Scalable fabrication of self-assembled GeSn vertical nanowires for nanophotonic applications

Nanophotonics (Berlin, Germany), 2023-01, Vol.12 (2), p.219-228

2023

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Magnetic tunneling junction based magnetic field sensors: Role of shape anisotropy versus free layer thickness

Journal of applied physics, 2011-04, Vol.109 (7), p.07C731-07C731-3

2011

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Composition and strain effects on Raman vibrational modes of GeSn alloys with Sn contents up to 31 % grown by low-temperature molecular beam epitaxy

Optical materials, 2024-03, Vol.149 (C), p.114987, Article 114987

2024

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Infrared photoresponse of GeSn/n-Ge heterojunctions grown by molecular beam epitaxy

Optics express, 2014-05, Vol.22 (9), p.11029-11034

2014

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Detection of spin-orbit torque with spin rotation symmetry

Applied physics letters, 2020-01, Vol.116 (1)

2020

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Band structure critical point energy in germanium–tin alloys with high tin contents

Applied physics letters, 2021-10, Vol.119 (16)

2021

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Properties of pseudomorphic and relaxed germanium1−xtinx alloys (x < 0.185) grown by MBE

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2017-03, Vol.35 (2)

2017

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Infrared dielectric response, index of refraction, and absorption of germanium-tin alloys with tin contents up to 27% deposited by molecular beam epitaxy

Applied physics letters, 2018-09, Vol.113 (12)

2018

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Fabrication of Germanium Tin Microstructures Through Inductively Coupled Plasma Dry Etching

IEEE transactions on nanotechnology, 2021, Vol.20, p.846-851

2021

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Band gap and strain engineering of pseudomorphic Ge1−x−ySixSny alloys on Ge and GaAs for photonic applications

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2018-03, Vol.36 (2)

2018

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Structural Properties of Boron-Doped Germanium-Tin Alloys Grown by Molecular Beam Epitaxy

Journal of electronic materials, 2014-04, Vol.43 (4), p.931-937

2014

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Temperature varying photoconductivity of GeSn alloys grown by chemical vapor deposition with Sn concentrations from 4% to 11

Journal of applied physics, 2016-03, Vol.119 (9)

2016

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Tuning the optical modulation of wideband terahertz waves by the gate voltage of graphene field effect transistors

Composites. Part B, Engineering, 2016-03, Vol.89, p.54-59

2016

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Thermal Stability of Annealed Germanium-Tin Alloys Grown by Molecular Beam Epitaxy

Journal of electronic materials, 2017-03, Vol.46 (3), p.1620-1627

2017

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Current-Voltage Characteristics of GeSn/Ge Heterojunction Diodes Grown by Molecular Beam Epitaxy

IEEE electron device letters, 2013-10, Vol.34 (10), p.1217-1219

2013

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IEEE_Xplore

Band gap and strain engineering of pseudomorphic Ge1− x − y Si x Sn y alloys on Ge and GaAs for photonic applications

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2018-03, Vol.36 (2)

2018

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WITHDRAWN: Microstructure and optoelectronic performance of SiGe/Si heterostructures

Microelectronics and reliability, 2016-12

2016

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Microstructure and optoelectronic performance of SiGe/Si heterostructures

Microelectronics and reliability

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Microwave phase detection with a magnetic tunnel junction

Applied physics letters, 2010-11, Vol.97 (21), p.212501-212501-3

2010

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Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy

Infrared electroluminescence from GeSn heterojunction diodes grown by molecular beam epitaxy

Enhanced photoluminescence of GeSn by strain relaxation and spontaneous carrier confinement through rapid thermal annealing

Photoconductivity of germanium tin alloys grown by molecular beam epitaxy

Tetrasilane and digermane for the ultra-high vacuum chemical vapor deposition of SiGe alloys

Silicon epitaxy using tetrasilane at low temperatures in ultra-high vacuum chemical vapor deposition

Scalable fabrication of self-assembled GeSn vertical nanowires for nanophotonic applications

Magnetic tunneling junction based magnetic field sensors: Role of shape anisotropy versus free layer thickness

Composition and strain effects on Raman vibrational modes of GeSn alloys with Sn contents up to 31 % grown by low-temperature molecular beam epitaxy

Infrared photoresponse of GeSn/n-Ge heterojunctions grown by molecular beam epitaxy

Detection of spin-orbit torque with spin rotation symmetry

Band structure critical point energy in germanium–tin alloys with high tin contents

Properties of pseudomorphic and relaxed germanium1−xtinx alloys (x < 0.185) grown by MBE

Infrared dielectric response, index of refraction, and absorption of germanium-tin alloys with tin contents up to 27% deposited by molecular beam epitaxy

Fabrication of Germanium Tin Microstructures Through Inductively Coupled Plasma Dry Etching

Band gap and strain engineering of pseudomorphic Ge1−x−ySixSny alloys on Ge and GaAs for photonic applications

Structural Properties of Boron-Doped Germanium-Tin Alloys Grown by Molecular Beam Epitaxy

Temperature varying photoconductivity of GeSn alloys grown by chemical vapor deposition with Sn concentrations from 4% to 11

Tuning the optical modulation of wideband terahertz waves by the gate voltage of graphene field effect transistors

Thermal Stability of Annealed Germanium-Tin Alloys Grown by Molecular Beam Epitaxy

Current-Voltage Characteristics of GeSn/Ge Heterojunction Diodes Grown by Molecular Beam Epitaxy

Band gap and strain engineering of pseudomorphic Ge1− x − y Si x Sn y alloys on Ge and GaAs for photonic applications

WITHDRAWN: Microstructure and optoelectronic performance of SiGe/Si heterostructures

Microstructure and optoelectronic performance of SiGe/Si heterostructures

Microwave phase detection with a magnetic tunnel junction

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