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Diazepam as a component of goal-directed sedation in critically ill trauma patients

Journal of critical care, 2011-04, Vol.26 (2), p.122-126

2011

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Monte Carlo calculation of electron initiated impact ionization in bulk zinc-blende and wurtzite GaN

Journal of applied physics, 1997-01, Vol.81 (2), p.726-733

1997

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Effect of gate poly-silicon depletion on MOSFET input impedance

IEEE microwave and wireless components letters, 2006-05, Vol.16 (5), p.290-292

2006

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DIELECTRIC PROPERTIES OF WURTZITE AND ZINCBLENDE STRUCTURE GALLIUM NITRIDE

The Journal of physics and chemistry of solids, 1997-06, Vol.58 (6), p.913-918

1997

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Dielectric properties of wurtzite and zincblende structure gallium nitride

The Journal of physics and chemistry of solids, 1997-06, Vol.58 (6), p.913-918

1997

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Accurate performance prediction of multi-GHz CML with data run-length variations

2005 IEEE International Symposium on Circuits and Systems (ISCAS), 2005, p.5103-5106 Vol. 5

2005

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Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN

Journal of applied physics, 1997-06, Vol.81 (12), p.7827-7834

1997

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Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure

Journal of applied physics, 1995-07, Vol.78 (2), p.1033-1038

1995

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Effect of doping on the reliability of GaAs multiple quantum well avalanche photodiodes

IEEE transactions on electron devices, 1997-04, Vol.44 (4), p.535-544

1997

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Comparison of Electron and Hole Initiated Impact Ionization in Zincblende and Wurtzite Phase Gallium Nitride

MRS proceedings, 1997, Vol.468, Article 457

1997

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Properties of metal-semiconductor contacts with plasma deposited silicon nitride interfacial layers

Journal of crystal growth, 1993, Vol.126 (1), p.156-162

1993

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The Influence of Inversion Surface Layers on the Evaluation of the Interface State Energy Distribution from Schottky-Diode I-U Characteristics

Physica status solidi. A, Applied research, 1990-12, Vol.122 (2), p.583-588

1990

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Increased thermal stability of Au/GaAs metal-insulator-semiconductor Schottky diodes with silicon nitride interfacial layer deposited by remote plasma-enhanced chemical vapor deposition

Journal of applied physics, 1993-05, Vol.73 (10), p.5075-5080

1993

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Theoretical Prediction of Zinc Blende Phase GaN Avalanche Photodiode Performance Based on Numerically Calculated Electron and Hole Impact Ionization Rate Ratio

MRS proceedings, 1996, Vol.423, Article 45

1996

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Metal/thin insulator/silicon schottky diodes with plasma deposited silicon nitride interfacial layer

Physica status solidi. A, Applied research, 1992-03, Vol.130 (1), p.245-251

1992

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Hole transport properties of bulk zinc-blende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure

Journal of applied physics, 1996-10, Vol.80 (8), p.4429-4436

1996

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Calculation of the wave-vector-dependent interband impact-ionization transition rate in wurtzite and zinc-blende phases of bulk GaN

Journal of applied physics, 1996-06, Vol.79 (11), p.8838-8840

1996

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Continuous flow ventilatory support using a multijet insufflation catheter. Physical, mathematical and clinical prerequisites and principles

Bratislavské lékarské listy, 2000, Vol.101 (2), p.78-84

2000

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Continuous flow ventilatory support with multijet insufflation catheter. Initial clinical experience

Bratislavské lékarské listy, 2000, Vol.101 (2), p.85-92

2000

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A universal common-source and common-drain model for 1-20GHz frequency range

2006 IEEE International Symposium on Circuits and Systems (ISCAS), 2006, p.4 pp.-3316

2006

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Effects of technology and dimensional scaling on input loss prediction of RF MOSFETs

18th International Conference on VLSI Design held jointly with 4th International Conference on Embedded Systems Design, 2005, p.295-300

2005

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Theoretical study of hole initiated impact ionization in bulk silicon and GaAs using a wave-vector-dependent numerical transition rate formulation within an ensemble Monte Carlo calculation

Journal of applied physics, 1995-01, Vol.77 (1), p.225-232

1995

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Theoretical investigation of wave-vector-dependent analytical and numerical formulations of the interband impact-ionization transition rate for electrons in bulk silicon and GaAs

Journal of applied physics, 1994-09, Vol.76 (6), p.3542-3551

1994

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CHANGING RISKS IN TUBERCULOSIS

American journal of epidemiology, 1976-05, Vol.103 (5), p.486-497

1976

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Dielectric Functions of Wurtzite and Zincblende Structure GaN

MRS proceedings, 1995, Vol.395, Article 601

1995

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Diazepam as a component of goal-directed sedation in critically ill trauma patients

Monte Carlo calculation of electron initiated impact ionization in bulk zinc-blende and wurtzite GaN

Effect of gate poly-silicon depletion on MOSFET input impedance

DIELECTRIC PROPERTIES OF WURTZITE AND ZINCBLENDE STRUCTURE GALLIUM NITRIDE

Dielectric properties of wurtzite and zincblende structure gallium nitride

Accurate performance prediction of multi-GHz CML with data run-length variations

Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN

Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure

Effect of doping on the reliability of GaAs multiple quantum well avalanche photodiodes

Comparison of Electron and Hole Initiated Impact Ionization in Zincblende and Wurtzite Phase Gallium Nitride

Properties of metal-semiconductor contacts with plasma deposited silicon nitride interfacial layers

The Influence of Inversion Surface Layers on the Evaluation of the Interface State Energy Distribution from Schottky-Diode I-U Characteristics

Increased thermal stability of Au/GaAs metal-insulator-semiconductor Schottky diodes with silicon nitride interfacial layer deposited by remote plasma-enhanced chemical vapor deposition

Theoretical Prediction of Zinc Blende Phase GaN Avalanche Photodiode Performance Based on Numerically Calculated Electron and Hole Impact Ionization Rate Ratio

Metal/thin insulator/silicon schottky diodes with plasma deposited silicon nitride interfacial layer

Hole transport properties of bulk zinc-blende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure

Calculation of the wave-vector-dependent interband impact-ionization transition rate in wurtzite and zinc-blende phases of bulk GaN

Continuous flow ventilatory support using a multijet insufflation catheter. Physical, mathematical and clinical prerequisites and principles

Continuous flow ventilatory support with multijet insufflation catheter. Initial clinical experience

A universal common-source and common-drain model for 1-20GHz frequency range

Effects of technology and dimensional scaling on input loss prediction of RF MOSFETs

Theoretical study of hole initiated impact ionization in bulk silicon and GaAs using a wave-vector-dependent numerical transition rate formulation within an ensemble Monte Carlo calculation

Theoretical investigation of wave-vector-dependent analytical and numerical formulations of the interband impact-ionization transition rate for electrons in bulk silicon and GaAs

CHANGING RISKS IN TUBERCULOSIS

Dielectric Functions of Wurtzite and Zincblende Structure GaN

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