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Neutron Radiation Effects in Epitaxially Laterally Overgrown GaN Films

Journal of electronic materials, 2007-10, Vol.36 (10), p.1320-1325

2007

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Neutron irradiation-induced modification of electrical and structural properties of GaN epifilms grown on Al2O3 (0001) substrate

Semiconductor science and technology, 2018-08, Vol.33 (9)

2018

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The model of self-compensation and pinning of the Fermi level in irradiated semiconductors

Semiconductors (Woodbury, N.Y.), 2007-09, Vol.41 (9), p.1011-1020

2007

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Electrical properties and radiation detector performance of free-standing bulk n-GaN

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2012-03, Vol.30 (2)

2012

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10 MeV electrons irradiation effects in variously doped n-GaN

Journal of applied physics, 2011-06, Vol.109 (12), p.123703-123703-8

2011

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Neutron irradiation effects in AlGaN/GaN heterojunctions

Physica. B, Condensed matter, 2006-04, Vol.376, p.523-526

2006

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Structure of InP single crystals irradiated with reactor neutrons

Physica. B, Condensed matter, 2006-03, Vol.373 (1), p.82-89

2006

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A model for Fermi-level pinning in semiconductors: radiation defects, interface boundaries

Physica. B, Condensed matter, 2004-05, Vol.348 (1), p.213-225

2004

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Electrical and structural properties of InSb crystals irradiated with reactor neutrons

Physica. B, Condensed matter, 2006-01, Vol.371 (2), p.272-279

2006

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Neutron irradiation effects on electrical properties and deep-level spectra in undoped n-AlGaN∕GaN heterostructures

Journal of applied physics, 2005-08, Vol.98 (3)

2005

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Neutron irradiation effects in p-GaN

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-09, Vol.24 (5), p.2256-2261

2006

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Neutron irradiation-induced modification of electrical and structural properties of GaN epifilms grown on Al 2 O 3 (0001) substrate

Semiconductor science and technology, 2018-09, Vol.33 (9), p.95011

2018

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Comparison of neutron irradiation effects in AlGaN/AlN/GaN, AlGaN/GaN, and InAlN/GaN heterojunctions

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2012-11, Vol.30 (6)

2012

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Effect of electron irradiation on AlGaN/GaN and InAlN/GaN heterojunctions

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013-03, Vol.31 (2)

2013

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Neutron transmutation doping effects in GaN

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-05, Vol.28 (3), p.608-612

2010

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Structural changes induced by neutron irradiation and heat treatments in InSb single crystals

Semiconductors (Woodbury, N.Y.), 2006-07, Vol.40 (7), p.749-757

2006

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Metastable centers in AlGaN/AlN/GaN heterostructures

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2012-07, Vol.30 (4)

2012

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Alpha particle detection with GaN Schottky diodes

Journal of applied physics, 2009-11, Vol.106 (10), p.103708-103708-5

2009

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Effect of pressure and mechanical stress on the electronic properties of AlN and GaN

Physics of the solid state, 2011-04, Vol.53 (4), p.679-688

2011

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Fast neutron irradiation effects in n-GaN

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2007-03, Vol.25 (2), p.436-442

2007

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The Electrical and Optical Properties of InAs Irradiated with Electrons (∼2 MeV): The Energy Structure of Intrinsic Point Defects

Semiconductors (Woodbury, N.Y.), 2005-04, Vol.39 (4), p.385

2005

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Carrier Removal Rates and Deep Traps in Neutron Irradiated n-GaN Films

Journal of the Electrochemical Society, 2011, Vol.158 (9), p.H866

2011

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Deep electron and hole traps in neutron transmutation doped n-GaN

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-07, Vol.29 (4)

2011

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On the electronic properties of GaSb irradiated with reactor neutrons and its charge neutrality level

Semiconductors (Woodbury, N.Y.), 2015-06, Vol.49 (6), p.763-766

2015

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The level of local charge-neutrality and pinning of the Fermi level in irradiated nitrides wz-III-N (BN, AlN, GaN, InN)

Semiconductors (Woodbury, N.Y.), 2009-10, Vol.43 (10), p.1271-1279

2009

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Neutron Radiation Effects in Epitaxially Laterally Overgrown GaN Films

Neutron irradiation-induced modification of electrical and structural properties of GaN epifilms grown on Al2O3 (0001) substrate

The model of self-compensation and pinning of the Fermi level in irradiated semiconductors

Electrical properties and radiation detector performance of free-standing bulk n-GaN

10 MeV electrons irradiation effects in variously doped n-GaN

Neutron irradiation effects in AlGaN/GaN heterojunctions

Structure of InP single crystals irradiated with reactor neutrons

A model for Fermi-level pinning in semiconductors: radiation defects, interface boundaries

Electrical and structural properties of InSb crystals irradiated with reactor neutrons

Neutron irradiation effects on electrical properties and deep-level spectra in undoped n-AlGaN∕GaN heterostructures

Neutron irradiation effects in p-GaN

Neutron irradiation-induced modification of electrical and structural properties of GaN epifilms grown on Al 2 O 3 (0001) substrate

Comparison of neutron irradiation effects in AlGaN/AlN/GaN, AlGaN/GaN, and InAlN/GaN heterojunctions

Effect of electron irradiation on AlGaN/GaN and InAlN/GaN heterojunctions

Neutron transmutation doping effects in GaN

Structural changes induced by neutron irradiation and heat treatments in InSb single crystals

Metastable centers in AlGaN/AlN/GaN heterostructures

Alpha particle detection with GaN Schottky diodes

Effect of pressure and mechanical stress on the electronic properties of AlN and GaN

Fast neutron irradiation effects in n-GaN

The Electrical and Optical Properties of InAs Irradiated with Electrons (∼2 MeV): The Energy Structure of Intrinsic Point Defects

Carrier Removal Rates and Deep Traps in Neutron Irradiated n-GaN Films

Deep electron and hole traps in neutron transmutation doped n-GaN

On the electronic properties of GaSb irradiated with reactor neutrons and its charge neutrality level

The level of local charge-neutrality and pinning of the Fermi level in irradiated nitrides wz-III-N (BN, AlN, GaN, InN)

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