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Electrically tunable molecular doping of graphene

Applied physics letters, 2013-01, Vol.102 (4)

2013

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Surface potential measurements on GaN and AlGaN/GaN heterostructures by scanning Kelvin probe microscopy

Journal of applied physics, 2001-07, Vol.90 (1), p.337-344

2001

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On the origin of the two-dimensional electron gas at the AlGaN∕GaN heterostructure interface

Applied physics letters, 2005-01, Vol.86 (4), p.42107

2005

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Highly sensitive and multidimensional detection of NO₂ using In₂O₃ thin films

Sensors and actuators. B, Chemical, 2011-12, Vol.160 (1), p.251-259

2011

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Correlated conductivity and work function changes in epitaxial graphene

Applied physics letters, 2012-02, Vol.100 (9), p.092113-092113-4

2012

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Scanning Kelvin probe microscopy characterization of dislocations in III-nitrides grown by metalorganic chemical vapor deposition

Applied physics letters, 2001-05, Vol.78 (19), p.2873-2875

2001

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Cantilever effects on the measurement of electrostatic potentials by scanning Kelvin probe microscopy

Applied physics letters, 2001-07, Vol.79 (4), p.545-547

2001

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Gas sensing using electrostatic force potentiometry

Applied physics letters, 2007-04, Vol.90 (17), p.173105-173105-3

2007

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Microwave performance evaluation of diamond surface channel FETs

Diamond and related materials, 2004-04, Vol.13 (4), p.802-807

2004

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Modification of Indium Tin Oxide for Improved Hole Injection in Organic Light Emitting Diodes

Advanced materials (Weinheim), 2001-08, Vol.13 (16), p.1234-1238

2001

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Fabrication and characterization of pre-aligned gallium nitride nanowire field-effect transistors

Nanotechnology, 2006-03, Vol.17 (5), p.1264-1271

2006

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Note: a simple thermal gradient annealing unit for the treatment of thin films

Review of scientific instruments, 2013-03, Vol.84 (3), p.036111-036111

2013

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Investigation of nanoscale electronic properties of CdZnTe crystals by scanning spreading resistance microscopy

Semiconductor science and technology, 2009-04, Vol.24 (4), p.045012-045012 (5)

2009

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Reduced trapping effects and improved electrical performance in buried-gate 4H-SiC MESFETs

IEEE transactions on electron devices, 2003-07, Vol.50 (7), p.1569-1574

2003

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Synthesis and Properties of High-Quality InN Nanowires and Nanonetworks

Journal of electronic materials, 2008-05, Vol.37 (5), p.585-592

2008

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Perturbation of charges in AlGaN∕GaN heterostructures by ultraviolet laser illumination

Journal of applied physics, 2004-10, Vol.96 (8), p.4253-4262

2004

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Laser-induced surface potential transients observed in III-nitride heterostructures

Applied physics letters, 2002-09, Vol.81 (12), p.2282-2284

2002

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Nanoscale surface characterization of GaN nanowires correlated with metal contact characteristics

Physica status solidi. A, Applications and materials science, 2007-04, Vol.204 (4), p.1123-1129

2007

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Surface stability of InGaN-channel based HFETs

Electronics letters, 2003-10, Vol.39 (22), p.1614-1616

2003

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Slow transients observed in AlGaN/GaN HFETs: effects of SiNx passivation and UV illumination

IEEE transactions on electron devices, 2003-04, Vol.50 (4), p.886

2003

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Investigation of CdZnTe crystal defects using scanning probe microscopy

Applied physics letters, 2007-03, Vol.90 (10), p.102121-102121-3

2007

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Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy

Applied physics letters, 2001-09, Vol.79 (10), p.1489-1491

2001

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Electrical bias stress related degradation of AlGaN/GaN HEMTs

Electronics letters, 2003-08, Vol.39 (16), p.1217-1218

2003

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Slow transients observed in AlGaN HFETs: Effects of SiN/sub x/ passivation and UV illumination

IEEE transactions on electron devices, 2003-04, Vol.50 (4), p.886-893

2003

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Nanoscale Capacitance–Voltage Characterization of Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures

Japanese Journal of Applied Physics, 2005-01, Vol.44 (10L), p.L1348

2005

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Electrically tunable molecular doping of graphene

Surface potential measurements on GaN and AlGaN/GaN heterostructures by scanning Kelvin probe microscopy

On the origin of the two-dimensional electron gas at the AlGaN∕GaN heterostructure interface

Highly sensitive and multidimensional detection of NO₂ using In₂O₃ thin films

Correlated conductivity and work function changes in epitaxial graphene

Scanning Kelvin probe microscopy characterization of dislocations in III-nitrides grown by metalorganic chemical vapor deposition

Cantilever effects on the measurement of electrostatic potentials by scanning Kelvin probe microscopy

Gas sensing using electrostatic force potentiometry

Microwave performance evaluation of diamond surface channel FETs

Modification of Indium Tin Oxide for Improved Hole Injection in Organic Light Emitting Diodes

Fabrication and characterization of pre-aligned gallium nitride nanowire field-effect transistors

Note: a simple thermal gradient annealing unit for the treatment of thin films

Investigation of nanoscale electronic properties of CdZnTe crystals by scanning spreading resistance microscopy

Reduced trapping effects and improved electrical performance in buried-gate 4H-SiC MESFETs

Synthesis and Properties of High-Quality InN Nanowires and Nanonetworks

Perturbation of charges in AlGaN∕GaN heterostructures by ultraviolet laser illumination

Laser-induced surface potential transients observed in III-nitride heterostructures

Nanoscale surface characterization of GaN nanowires correlated with metal contact characteristics

Surface stability of InGaN-channel based HFETs

Slow transients observed in AlGaN/GaN HFETs: effects of SiNx passivation and UV illumination

Investigation of CdZnTe crystal defects using scanning probe microscopy

Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy

Electrical bias stress related degradation of AlGaN/GaN HEMTs

Slow transients observed in AlGaN HFETs: Effects of SiN/sub x/ passivation and UV illumination

Nanoscale Capacitance–Voltage Characterization of Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures

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