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Investigation of the four-gate action in G(4)-FETs

IEEE transactions on electron devices, 2004-11, Vol.51 (11), p.1931-1935

2004

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Full field measurements of curvature using coherent gradient sensing: application to thin film characterization

Thin solid films, 1998-07, Vol.325 (1), p.42-54

1998

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Reactively sputtered Ti-Si-N films I. Physical properties

Journal of applied physics, 1997-01, Vol.81 (2), p.656-663

1997

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Tantalum-based diffusion barriers in Si/Cu VLSi metallizations

Journal of applied physics, 1991-08, Vol.70 (3), p.1369-1373

1991

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Amorphous (Mo, Ta, or W)–Si–N diffusion barriers for Al metallizations

Journal of applied physics, 1996-01, Vol.79 (2), p.1109-1115

1996

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Back-gate and series resistance effects in LDMOSFETs on SOI

IEEE transactions on electron devices, 2001-10, Vol.48 (10), p.2410-2416

2001

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Investigation of the Four-Gate Action in $hbox G^4$ -FETs

IEEE transactions on electron devices, 2004-11, Vol.51 (11), p.1931-1935

2004

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Reactively sputtered Ti-Si-N films. II. Diffusion barriers for Al and Cu metallizations on Si

Journal of applied physics, 1997-01, Vol.81 (2), p.664-671

1997

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Reactively sputtered Ru–Si–O films

Journal of applied physics, 1999-08, Vol.86 (4), p.1974-1981

1999

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A systematic investigation of the degradation mechanisms in SOI n-channel LD-MOSFETs

Solid-state electronics, 2003-09, Vol.47 (9), p.1419-1427

2003

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Ti-Si-N diffusion barriers between silicon and copper

IEEE electron device letters, 1994-08, Vol.15 (8), p.298-300

1994

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Films of Ni-7 at% V, Pd, Pt and Ta-Si-N as diffusion barriers for copper on Bi2Te3

Journal of physics. D, Applied physics, 1998-10, Vol.31 (19), p.2406-2411

1998

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Thermal reaction of Pt film with 〈110〉 GaN epilayer

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1999-09, Vol.17 (5), p.2642-2646

1999

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Texture of copper films on Ta35Si18N47 and Ti33Si23N44 underlayers

Thin solid films, 1999-08, Vol.350 (1-2), p.1-4

1999

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Effect of Si in reactively sputtered Ti-Si-N films on structure and diffusion barrier performance

Applied physics. A, Materials science & processing, 1997-07, Vol.65 (1), p.43-45

1997

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Reaction of aluminum-on-titanium bilayer with GaN : Influence of the Al:Ti atomic ratio

Journal of electronic materials, 1999-08, Vol.28 (8), p.949-954

1999

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Reactively sputtered RuO2 diffusion barriers

Applied physics letters, 1987-03, Vol.50 (13), p.854-855

1987

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Instability of Amorphous Ru‐Si‐O Thin Films under Thermal Oxidation

Journal of the Electrochemical Society, 1999-04, Vol.146 (4), p.1546-1548

1999

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Performance of W100−xNx diffusion barriers between 〈Si〉 and Cu

Applied surface science, 1991-11, Vol.53, p.364-372

1991

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Extreme environment technologies for NASA's robotic planetary exploration

Acta astronautica, 2008-07, Vol.63 (1-4), p.285-298

2008

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Degradation mechanisms in SOI n-channel LDMOSFETs

Microelectronic engineering, 2001-11, Vol.59 (1), p.489-495

2001

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Novel techniques for millimeter-wave packages

IEEE transactions on microwave theory and techniques, 1995-07, Vol.43 (7), p.1516-1523

1995

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New results using membrane-supported circuits: a Ka-band power amplifier and survivability testing

IEEE transactions on microwave theory and techniques, 1996-09, Vol.44 (9), p.1603-1606

1996

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Amorphous Ta–Si–N thin-film alloys as diffusion barrier in Al/Si metallizations

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1990-05, Vol.8 (3), p.3006-3010

1990

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Films of Ni-7 at% V, Pd, Pt and Ta-Si-N as diffusion barriers for copper on

Journal of physics. D, Applied physics, 1998-10, Vol.31 (19), p.2406-2411

1998

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Investigation of the four-gate action in G(4)-FETs

Full field measurements of curvature using coherent gradient sensing: application to thin film characterization

Reactively sputtered Ti-Si-N films I. Physical properties

Tantalum-based diffusion barriers in Si/Cu VLSi metallizations

Amorphous (Mo, Ta, or W)–Si–N diffusion barriers for Al metallizations

Back-gate and series resistance effects in LDMOSFETs on SOI

Investigation of the Four-Gate Action in $hbox G^4$ -FETs

Reactively sputtered Ti-Si-N films. II. Diffusion barriers for Al and Cu metallizations on Si

Reactively sputtered Ru–Si–O films

A systematic investigation of the degradation mechanisms in SOI n-channel LD-MOSFETs

Ti-Si-N diffusion barriers between silicon and copper

Films of Ni-7 at% V, Pd, Pt and Ta-Si-N as diffusion barriers for copper on Bi2Te3

Thermal reaction of Pt film with 〈110〉 GaN epilayer

Texture of copper films on Ta35Si18N47 and Ti33Si23N44 underlayers

Effect of Si in reactively sputtered Ti-Si-N films on structure and diffusion barrier performance

Reaction of aluminum-on-titanium bilayer with GaN : Influence of the Al:Ti atomic ratio

Reactively sputtered RuO2 diffusion barriers

Instability of Amorphous Ru‐Si‐O Thin Films under Thermal Oxidation

Performance of W100−xNx diffusion barriers between 〈Si〉 and Cu

Extreme environment technologies for NASA's robotic planetary exploration

Degradation mechanisms in SOI n-channel LDMOSFETs

Novel techniques for millimeter-wave packages

New results using membrane-supported circuits: a Ka-band power amplifier and survivability testing

Amorphous Ta–Si–N thin-film alloys as diffusion barrier in Al/Si metallizations

Films of Ni-7 at% V, Pd, Pt and Ta-Si-N as diffusion barriers for copper on

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