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Local anodic oxidation by atomic force microscopy for nano-Raman strain measurements on silicon–germanium thin films

Thin solid films, 2010-04, Vol.518 (12), p.3267-3272

2010

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Height distribution of atomic force microscopy images as a tool for atomic layer deposition characterization

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2013-01, Vol.31 (1)

2013

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In situ study of the atomic layer deposition of HfO2 on Si

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2012-01, Vol.30 (1)

2012

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In situ study of the atomic layer deposition of HfO 2 on Si

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2012-01, Vol.30 (1), p.01A143-01A143-15

2012

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In situ studies of the atomic layer deposition of thin HfO2 dielectrics by ultra high vacuum atomic force microscope

Thin solid films, 2010-06, Vol.518 (16), p.4688-4691

2010

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Random field models of geometrically imperfect structures with “clamped” boundary conditions

Probabilistic engineering mechanics, 2008-04, Vol.23 (2), p.219-226

2008

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Influence of the fullerene derivatives and cage polyhedral oligomeric silsesqiuoxanes on 3-aminopropyltrimethoxysilane based hybrid nanocomposites chemical, morphological and electrical properties

The Journal of physics and chemistry of solids, 2013-01, Vol.74 (1), p.135-145

2013

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Studies of the chemical and electrical properties of fullerene and 3-aminopropyltrimethoxysilane based low-k materials

Thin solid films, 2012-01, Vol.520 (7), p.2498-2504

2012

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Spectroscopic and atomic force microscopy investigations of hybrid materials composed of fullerenes and 3-aminopropyltrimethoxysilane

The Journal of physics and chemistry of solids, 2012-05, Vol.73 (5), p.699-706

2012

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Spectroscopic and capacitance–voltage characterization of thin aminopropylmethoxysilane films doped with copper phthalocyanine, tris(dimethylvinylsilyloxy)–POSS and fullerene cages

Applied surface science, 2012-03, Vol.258 (10), p.4213-4221

2012

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In situ studies of the atomic layer deposition of thin HfO 2 dielectrics by ultra high vacuum atomic force microscope

Thin solid films, 2010, Vol.518 (16), p.4688-4691

2010

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Atomic layer deposition reactor for fabrication of metal oxides

Physica status solidi. C, 2011-04, Vol.8 (4), p.1287-1292

2011

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In-Situ Studies of ALD Growth of Hafnium Oxide Films

Advanced engineering materials, 2009-04, Vol.11 (4), p.265-268

2009

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Annealing Influence on Siloxane-Based Materials Incorporated with Fullerenes, Phthalocyanines, and Silsesquioxanes

BioNanoScience, 2012-03, Vol.2 (1), p.52-58

2012

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In situ measurements of the atomic layer deposition of high-k dielectrics by atomic force microscope for advanced microsystems

2009 International Students and Young Scientists Workshop "Photonics and Microsystems", 2009, p.47-51

2009

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Fullerene based materials for ultra-low-k application

2010 International Students and Young Scientists Workshop "Photonics and Microsystems", 2010, p.39-43

2010

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Local anodic oxidation by atomic force microscopy for nano-Raman strain measurements on silicon–germanium thin films

Height distribution of atomic force microscopy images as a tool for atomic layer deposition characterization

In situ study of the atomic layer deposition of HfO2 on Si

In situ study of the atomic layer deposition of HfO 2 on Si

In situ studies of the atomic layer deposition of thin HfO2 dielectrics by ultra high vacuum atomic force microscope

Random field models of geometrically imperfect structures with “clamped” boundary conditions

Influence of the fullerene derivatives and cage polyhedral oligomeric silsesqiuoxanes on 3-aminopropyltrimethoxysilane based hybrid nanocomposites chemical, morphological and electrical properties

Studies of the chemical and electrical properties of fullerene and 3-aminopropyltrimethoxysilane based low-k materials

Spectroscopic and atomic force microscopy investigations of hybrid materials composed of fullerenes and 3-aminopropyltrimethoxysilane

Spectroscopic and capacitance–voltage characterization of thin aminopropylmethoxysilane films doped with copper phthalocyanine, tris(dimethylvinylsilyloxy)–POSS and fullerene cages

In situ studies of the atomic layer deposition of thin HfO 2 dielectrics by ultra high vacuum atomic force microscope

Atomic layer deposition reactor for fabrication of metal oxides

In-Situ Studies of ALD Growth of Hafnium Oxide Films

Annealing Influence on Siloxane-Based Materials Incorporated with Fullerenes, Phthalocyanines, and Silsesquioxanes

In situ measurements of the atomic layer deposition of high-k dielectrics by atomic force microscope for advanced microsystems

Fullerene based materials for ultra-low-k application

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