UB Paderborn / Katalog / Suche / in CDI

Bottom-up assembly of large-area nanowire resonator arrays

Nature nanotechnology, 2008-02, Vol.3 (2), p.88-92

2008

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4H-SiC Visible-Blind Single-Photon Avalanche Diode for Ultraviolet Detection at 280 and 350 nm

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.1977-1983

2008

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IEEE_Xplore

Growth characteristics of silicon nanowires synthesized by vapor–liquid–solid growth in nanoporous alumina templates

Journal of crystal growth, 2003-06, Vol.254 (1), p.14-22

2003

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Use of Phosphine as an n-Type Dopant Source for Vapor−Liquid−Solid Growth of Silicon Nanowires

Nano letters, 2005-11, Vol.5 (11), p.2139-2143

2005

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Structural and electrical properties of trimethylboron-doped silicon nanowires

Applied physics letters, 2004-10, Vol.85 (15), p.3101-3103

2004

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Effect of diborane on the microstructure of boron-doped silicon nanowires

Journal of crystal growth, 2005-04, Vol.277 (1), p.428-436

2005

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Silicon Nanowire Array Photoelectrochemical Cells

Journal of the American Chemical Society, 2007-10, Vol.129 (41), p.12344-12345

2007

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High-Performance Smoothly Tapered Junction Termination Extensions for High-Voltage 4H-SiC Devices

IEEE transactions on electron devices, 2011-10, Vol.58 (10), p.3395-3400

2011

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IEEE_Xplore

Diameter Dependent Growth Rate and Interfacial Abruptness in Vapor-Liquid-Solid Si/Si1-xGex Heterostructure Nanowires

Nano letters, 2008-04, Vol.8 (4), p.1246-1252

2008

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Raman Scattering from Si1-xGex Alloy Nanowires

Journal of physical chemistry. C, 2008-03, Vol.112 (9), p.3209-3215

2008

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Examination of In-Grown Stacking Faults in 8°- and 4°-Offcut 4H-SiC Epitaxy by Photoluminescence Imaging

Journal of electronic materials, 2008-05, Vol.37 (5), p.730-735

2008

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Stranski−Krastanow Growth of Germanium on Silicon Nanowires

Nano letters, 2005-06, Vol.5 (6), p.1081-1085

2005

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Effect of growth conditions on the composition and structure of Si1−xGex nanowires grown by vapor–liquid–solid growth

Journal of materials research, 2006-11, Vol.21 (11), p.2876-2881

2006

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In Situ Axially Doped n-Channel Silicon Nanowire Field-Effect Transistors

Nano letters, 2008-12, Vol.8 (12), p.4359-4364

2008

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Oxidation of silicon nanowires for top-gated field effect transistors

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2008-05, Vol.26 (3), p.370-374

2008

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CL/EBIC-SEM Techniques for Evaluation of Impact of Crystallographic Defects on Carrier Lifetime in 4H-SiC Epitaxial Layers

Materials science forum, 2010-01, Vol.645-648, p.211-214

2010

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Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers

Materials science forum, 2010-01, Vol.645-648, p.203-206

2010

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4H-SiC Single Photon Avalanche Diode for 280nm UV Applications

Materials science forum, 2009, Vol.600-603, p.1203-1206

2009

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In Situ Measurement of Nitrogen during Growth of 4H-SiC by CVD

Materials science forum, 2007-01, Vol.556-557, p.125-128

2007

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Impact of 4H-SiC Substrate Defectivity on Epilayer Injected Carrier Lifetimes

Materials science forum, 2009-01, Vol.600-603, p.481-484

2009

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Electrical properties of p- and n-type silicon nanowires

Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC, 2004, p.23-24 vol.1

2004

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IEEE_Xplore

Development of Doped and Heterostructured Si-Ge Nanowires

Microscopy and microanalysis, 2004-08, Vol.10 (S02), p.22-23

2004

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Top-gated field effect devices using oxidized silicon nanowires

63rd Device Research Conference Digest, 2005. DRC '05, 2005, Vol.1, p.159-160

2005

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IEEE_Xplore

Diameter-dependent composition of vapor-liquid-solid grown Si1-xGex nanowires

Nano letters, 2007-10, Vol.7 (10), p.3241-3245

2007

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Vapor-Liquid-Solid Growth of Silicon-Germanium Nanowires

Advanced materials (Weinheim), 2003-12, Vol.15 (24), p.2073-2076

2003

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Bottom-up assembly of large-area nanowire resonator arrays

4H-SiC Visible-Blind Single-Photon Avalanche Diode for Ultraviolet Detection at 280 and 350 nm

Growth characteristics of silicon nanowires synthesized by vapor–liquid–solid growth in nanoporous alumina templates

Use of Phosphine as an n-Type Dopant Source for Vapor−Liquid−Solid Growth of Silicon Nanowires

Structural and electrical properties of trimethylboron-doped silicon nanowires

Effect of diborane on the microstructure of boron-doped silicon nanowires

Silicon Nanowire Array Photoelectrochemical Cells

High-Performance Smoothly Tapered Junction Termination Extensions for High-Voltage 4H-SiC Devices

Diameter Dependent Growth Rate and Interfacial Abruptness in Vapor-Liquid-Solid Si/Si1-xGex Heterostructure Nanowires

Raman Scattering from Si1-xGex Alloy Nanowires

Examination of In-Grown Stacking Faults in 8°- and 4°-Offcut 4H-SiC Epitaxy by Photoluminescence Imaging

Stranski−Krastanow Growth of Germanium on Silicon Nanowires

Effect of growth conditions on the composition and structure of Si1−xGex nanowires grown by vapor–liquid–solid growth

In Situ Axially Doped n-Channel Silicon Nanowire Field-Effect Transistors

Oxidation of silicon nanowires for top-gated field effect transistors

CL/EBIC-SEM Techniques for Evaluation of Impact of Crystallographic Defects on Carrier Lifetime in 4H-SiC Epitaxial Layers

Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers

4H-SiC Single Photon Avalanche Diode for 280nm UV Applications

In Situ Measurement of Nitrogen during Growth of 4H-SiC by CVD

Impact of 4H-SiC Substrate Defectivity on Epilayer Injected Carrier Lifetimes

Electrical properties of p- and n-type silicon nanowires

Development of Doped and Heterostructured Si-Ge Nanowires

Top-gated field effect devices using oxidized silicon nanowires

Diameter-dependent composition of vapor-liquid-solid grown Si1-xGex nanowires

Vapor-Liquid-Solid Growth of Silicon-Germanium Nanowires

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