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A comparative study of charge pumping circuits for flash memory applications

Microelectronics and reliability, 2012-04, Vol.52 (4), p.670-687

2012

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Degradation behaviors of GaN light-emitting diodes under high-temperature and high-current stressing

Microelectronics and reliability, 2012-08, Vol.52 (8), p.1636-1639

2012

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Bonding structures of silicon oxynitride prepared by oxidation of Si-rich silicon nitride

Thin solid films, 2004-09, Vol.462 (Complete), p.42-45

2004

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Silicon oxynitride prepared by chemical vapor deposition as optical waveguide materials

Journal of crystal growth, 2006-02, Vol.288 (1), p.171-175

2006

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A statistical model to predict the performance variation of polysilicon TFTs formed by grain-enhancement technology

IEEE transactions on electron devices, 2004-12, Vol.51 (12), p.2061-2068

2004

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Modeling of grain growth mechanism by nickel silicide reactive grain boundary effect in metal-induced-lateral-crystallization

IEEE transactions on electron devices, 2003-06, Vol.50 (6), p.1467-1474

2003

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Modeling of large-grain polysilicon formation under retardation effect of SPC

IEEE transactions on electron devices, 2004-12, Vol.51 (12), p.2205-2210

2004

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A SPICE model for thin-film transistors fabricated on grain-enhanced polysilicon film

IEEE transactions on electron devices, 2003-04, Vol.50 (4), p.1103-1108

2003

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Interface structure of ultrathin oxide prepared by N/sub 2/O oxidation

IEEE transactions on electron devices, 2003-09, Vol.50 (9), p.1941-1945

2003

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Design and factorization of FIR paraunitary filter banks given several analysis filters

IEEE transactions on signal processing, 2000-07, Vol.48 (7), p.2157-2161

2000

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Fast algorithm for computing discrete cosine transform

IEEE transactions on signal processing, 1997-03, Vol.45 (3), p.757-760

Kok, C.W.

1997

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Lattice structures parameterization of linear phase paraunitary matrices with pairwise mirror-image symmetry in the frequency domain with an odd number of rows

IEEE transactions on circuits and systems. 2, Analog and digital signal processing, 2001-06, Vol.48 (6), p.633-636

2001

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Interface and oxide traps in high-κ hafnium oxide films

Thin solid films, 2004-09, Vol.462 (Complete), p.96-100

2004

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Modeling of high-frequency characteristics for epoxy-sealed micro vacuum capacitors

Microelectronics and reliability, 2010-05, Vol.50 (5), p.627-630

2010

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Effects of aluminum incorporation on hafnium oxide film using plasma immersion ion implantation

Microelectronics and reliability, 2008-11, Vol.48 (11), p.1765-1768

2008

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Current transport and high-field reliability of aluminum/hafnium oxide/silicon structure

Thin solid films, 2006-05, Vol.504 (1), p.312-316

2006

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Interface structure of ultrathin oxide prepared by N2O oxidation

IEEE transactions on electron devices, 2003-09, Vol.50 (9), p.1941

2003

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Electrical characteristics of high- κ dielectric film grown by direct sputtering method

Solid-state electronics, 2006-02, Vol.50 (2), p.237-240

2006

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Stressing effects on the charge trapping of silicon oxynitride prepared by thermal oxidation of LPCVD Si-rich silicon nitride

Thin solid films, 2006-05, Vol.504 (1), p.7-10

2006

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Effects of periphery encapsulation material on the characteristics of micro vacuum dielectric capacitor

Microelectronics and reliability, 2009-05, Vol.49 (5), p.506-509

2009

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Oxynitride gate dielectric prepared by thermal oxidation of low-pressure chemical vapor deposition silicon-rich silicon nitride

Microelectronics and reliability, 2003-04, Vol.43 (4), p.611-616

2003

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Electrical characterization of the hafnium oxide prepared by direct sputtering of Hf in oxygen with rapid thermal annealing

Microelectronics and reliability, 2003-08, Vol.43 (8), p.1289-1293

2003

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Minimizing hydrogen content in silicon oxynitride by thermal oxidation of silicon-rich silicon nitride

Microelectronics and reliability, 2006-12, Vol.46 (12), p.2056-2061

2006

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Blind equalization of multiple FIR channels using filter banks with H/sub /spl infin// optimization

2000 IEEE International Conference on Acoustics, Speech, and Signal Processing. Proceedings (Cat. No.00CH37100), 2000, Vol.5, p.2741-2744 vol.5

Kok, C.W.

2000

Volltextzugriff (PDF)

Preparation of Thin Dielectric Film for Nonvolatile Memory by Thermal Oxidation of Si-Rich LPCVD Nitride

Journal of the Electrochemical Society, 2001-05, Vol.148 (5), p.G275

2001

Volltextzugriff (PDF)

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A comparative study of charge pumping circuits for flash memory applications

Degradation behaviors of GaN light-emitting diodes under high-temperature and high-current stressing

Bonding structures of silicon oxynitride prepared by oxidation of Si-rich silicon nitride

Silicon oxynitride prepared by chemical vapor deposition as optical waveguide materials

A statistical model to predict the performance variation of polysilicon TFTs formed by grain-enhancement technology

Modeling of grain growth mechanism by nickel silicide reactive grain boundary effect in metal-induced-lateral-crystallization

Modeling of large-grain polysilicon formation under retardation effect of SPC

A SPICE model for thin-film transistors fabricated on grain-enhanced polysilicon film

Interface structure of ultrathin oxide prepared by N/sub 2/O oxidation

Design and factorization of FIR paraunitary filter banks given several analysis filters

Fast algorithm for computing discrete cosine transform

Lattice structures parameterization of linear phase paraunitary matrices with pairwise mirror-image symmetry in the frequency domain with an odd number of rows

Interface and oxide traps in high-κ hafnium oxide films

Modeling of high-frequency characteristics for epoxy-sealed micro vacuum capacitors

Effects of aluminum incorporation on hafnium oxide film using plasma immersion ion implantation

Current transport and high-field reliability of aluminum/hafnium oxide/silicon structure

Interface structure of ultrathin oxide prepared by N2O oxidation

Electrical characteristics of high- κ dielectric film grown by direct sputtering method

Stressing effects on the charge trapping of silicon oxynitride prepared by thermal oxidation of LPCVD Si-rich silicon nitride

Effects of periphery encapsulation material on the characteristics of micro vacuum dielectric capacitor

Oxynitride gate dielectric prepared by thermal oxidation of low-pressure chemical vapor deposition silicon-rich silicon nitride

Electrical characterization of the hafnium oxide prepared by direct sputtering of Hf in oxygen with rapid thermal annealing

Minimizing hydrogen content in silicon oxynitride by thermal oxidation of silicon-rich silicon nitride

Blind equalization of multiple FIR channels using filter banks with H/sub /spl infin// optimization

Preparation of Thin Dielectric Film for Nonvolatile Memory by Thermal Oxidation of Si-Rich LPCVD Nitride

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